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34 条记录 (耗时 0.03 秒)

    Display device and driving method thereof
    21.
    发明申请
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号：US20060221662A1

    公开(公告)日：2006-10-05

    申请号：US11373671

    申请日：2006-03-09

    申请人： Kee-Chan Park ,  Ho-Suk Maeng ,  Seong-Il Park ,  Cheol-Min Kim ,  Chi-Woo Kim ,  Soong-Yong Joo ,  Il-Gon Kim

    发明人： Kee-Chan Park ,  Ho-Suk Maeng ,  Seong-Il Park ,  Cheol-Min Kim ,  Chi-Woo Kim ,  Soong-Yong Joo ,  Il-Gon Kim

    IPC分类号： G11C11/22

    CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/043

    摘要： A display device includes a plurality of pixels, wherein each pixel includes: a light emitting element; a first capacitor connected between a first node and a second node; a driving transistor having an input terminal, an output terminal, and a control terminal connected to the second node where the driving transistor supplies a driving current to the light emitting element to emit light; a first switching unit supplying a first reference voltage to the driving transistor according to a first scanning signal and connecting the first node to a data voltage or the driving transistor; and a second switching unit supplying a driving voltage to the driving transistor according to a second scanning signal and connecting the first node to the data voltage. Accordingly, variations in threshold voltage of the driving transistor can be compensated for so that it is possible to display a uniform image.

    摘要翻译： 显示装置包括多个像素，其中每个像素包括：发光元件; 连接在第一节点和第二节点之间的第一电容器; 驱动晶体管，其具有输入端子，输出端子和连接到所述第二节点的控制端子，其中所述驱动晶体管向所述发光元件提供驱动电流以发光; 第一开关单元，根据第一扫描信号向驱动晶体管提供第一参考电压，并将第一节点连接到数据电压或驱动晶体管; 以及第二开关单元，其根据第二扫描信号向驱动晶体管提供驱动电压，并将第一节点连接到数据电压。 因此，可以补偿驱动晶体管的阈值电压的变化，使得可以显示均匀的图像。

    Method for fabricating a thin film transistor having a taper-etched semiconductor film
    23.
    发明授权
    Method for fabricating a thin film transistor having a taper-etched semiconductor film 失效
    用于制造具有锥形蚀刻半导体膜的薄膜晶体管的方法

    公开(公告)号：US5723371A

    公开(公告)日：1998-03-03

    申请号：US517878

    申请日：1995-08-23

    申请人： Young-Kap Seo ,  Chi-Woo Kim ,  Ho-Chul Kang

    发明人： Young-Kap Seo ,  Chi-Woo Kim ,  Ho-Chul Kang

    IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/786 ,  H01L21/84

    CPC分类号： H01L29/66765 ,  H01L21/31138 ,  H01L21/32135 ,  H01L29/78669 ,  Y10S438/906 ,  Y10S438/978

    摘要： A method for fabricating a thin film transistor having a taper-etched semiconductor film includes the steps of forming a gate electrode on a bare substrate; forming an insulating film on the gate electrode;p forming a semiconductor film by forming an amorphous silicon film layer on the insulating film and forming an N.sup.+ amorphous silicon film on the amorphous silicon film layer, descumming photoresist residue from the semiconductor film by using a specified gas and taper etching a part of the semiconductor film, which is uncoated with the photoresist, by using HCl and SF.sub.6, to form a gentle slope in the etching profile resulting from overetching.

    摘要翻译： 一种用于制造具有锥形蚀刻半导体膜的薄膜晶体管的方法包括在裸衬底上形成栅电极的步骤; 在所述栅电极上形成绝缘膜; p通过在所述绝缘膜上形成非晶硅膜层而形成半导体膜，并在所述非晶硅膜层上形成N +非晶硅膜，通过使用规定的所述半导体膜从所述半导体膜除去光刻胶残渣 气体和锥度蚀刻通过使用HCl和SF6在光刻胶中未涂覆的半导体膜的一部分，以在由过蚀刻产生的蚀刻轮廓中形成平缓的斜率。

    Shift register and display apparatus that addresses performance problems caused by transistor leakage current
    24.
    发明授权
    Shift register and display apparatus that addresses performance problems caused by transistor leakage current 有权
    移位寄存器和显示装置解决晶体管漏电流引起的性能问题

    公开(公告)号：US09019256B2

    公开(公告)日：2015-04-28

    申请号：US13155779

    申请日：2011-06-08

    申请人： Jin-Woo Park ,  Seung-Kyu Lee ,  Chul-Ho Kim ,  Dong-Hoon Lee ,  Chi-Woo Kim

    发明人： Jin-Woo Park ,  Seung-Kyu Lee ,  Chul-Ho Kim ,  Dong-Hoon Lee ,  Chi-Woo Kim

    IPC分类号： G09G3/36 ,  G11C19/28

    CPC分类号： G11C19/287

    摘要： A shift register including a plurality of stages, each of them including a first node, a second node, and a third node being in a high-impedance state when the first node is in a high-impedance state. The shift register includes an input circuit unit inputting a driving voltage to the first node in response to an output signal of a previous stage, a driving circuit unit generating an output signal according to a voltage of the first node, and a holding unit holding the output signal at a level of a gate-off voltage according to a voltage of the second node in an inactive period of a current stage, in which the holding unit comprises a first diode which applies a clock signal to the second node.

    摘要翻译： 一种移位寄存器，包括多个级，每个级包括第一节点，第二节点和第三节点，当第一节点处于高阻抗状态时处于高阻抗状态。 移位寄存器包括输入电路单元，其响应于前一级的输出信号向第一节点输入驱动电压，驱动电路单元根据第一节点的电压产生输出信号，以及保持单元， 输出信号在当前级的无效时段期间根据第二节点的电压的栅极截止电压的电平，其中保持单元包括向第二节点施加时钟信号的第一二极管。

    Flat panel display device and method for manufacturing the same using sequental lateral solidifcation and solid phase crystallization
    27.
    发明授权
    Flat panel display device and method for manufacturing the same using sequental lateral solidifcation and solid phase crystallization 有权
    平板显示装置及其制造方法使用顺序侧向固化和固相结晶

    公开(公告)号：US07820466B2

    公开(公告)日：2010-10-26

    申请号：US11781518

    申请日：2007-07-23

    申请人： Han-Na Jo ,  Chi-Woo Kim ,  Young-Jin Chang ,  Jae-Beom Choi

    发明人： Han-Na Jo ,  Chi-Woo Kim ,  Young-Jin Chang ,  Jae-Beom Choi

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1285

    摘要： A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.

    摘要翻译： 平板显示装置包括：基板，包括具有多个像素部分的像素区域和与像素区域相邻设置的外围电路区域以驱动像素部分;电路TFT，设置在外围电路区域中;电路TFT包括： 在横向方向上具有第一晶体生长的第一半导体层和设置在像素区域中的像素TFT，所述像素TFT包括具有第二晶体各向同性生长的第二半导体层。

    METHOD OF MANUFACTURING POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR HAVING THE SAME
    28.
    发明申请
    METHOD OF MANUFACTURING POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR HAVING THE SAME 审中-公开
    制造多晶硅薄膜的方法及其制造薄膜薄膜晶体管的方法

    公开(公告)号：US20090275178A1

    公开(公告)日：2009-11-05

    申请号：US12490236

    申请日：2009-06-23

    申请人： Se-Jin CHUNG ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

    发明人： Se-Jin CHUNG ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

    IPC分类号： H01L21/336 ,  H01L21/268

    CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

    摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

    摘要翻译： 在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。 非晶硅薄膜位于基板的第一端部上。 液化硅结晶形成硅晶粒。 激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。 然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。 因此，可以提高非晶硅薄膜的电特性。

    Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
    30.
    发明授权
    Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 失效
    配线用组合物，使用该组合物的布线及其制造方法，使用布线的显示器及其制造方法

    公开(公告)号：US06946681B2

    公开(公告)日：2005-09-20

    申请号：US10732480

    申请日：2003-12-11

    申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

    发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

    IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L23/482 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376

    CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

    摘要翻译： Mo或MoW组合物层具有小于15μOggacm的低电阻率，并且使用Al合金附魔或Cr附魔蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 O 2 O 2的蚀刻气体系统 防止Mo或MoW合金层的蚀刻，以及SF 6+ + HCl（+ He）或SF 6 + Cl 2 2的蚀刻气体 >（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢的气体和选自以下的至少一种气体的蚀刻气体系统： 4，CHF 3，CHClF 2，CH 3，F和C 2 6 ，产生良好的TFT特性，H 2等离子体处理可进一步提高TFT特性。