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公开(公告)号：US08766207B2
公开(公告)日：2014-07-01
申请号：US13241392
申请日：2011-09-23
IPC分类号： H01J37/244
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.
摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。
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公开(公告)号：US08673783B2
公开(公告)日：2014-03-18
申请号：US12829664
申请日：2010-07-02
IPC分类号： H01L21/302
CPC分类号： H01L23/5386 , H01L21/02074 , H01L21/28079 , H01L21/67011 , H01L21/7684 , H01L29/495 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
摘要翻译： 本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。 在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体 和电介质层。 该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。
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公开(公告)号：US08466063B2
公开(公告)日：2013-06-18
申请号：US13302520
申请日：2011-11-22
IPC分类号： H01L21/44
CPC分类号： H01L29/78 , C23C14/022 , C23C14/046 , C23C14/18 , C23C14/221 , C23C16/0263 , C23C16/045 , C23C16/06 , C23C16/48 , C23C16/484 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76865 , H01L21/76877 , H01L29/4966 , H01L29/66545
摘要： A method of depositing a metal film on a substrate with patterned features includes placing a substrate with patterned features into a photo-induced chemical vapor deposition (PI-CVD) process chamber. The method also includes depositing a metal film by PI-CVD to fill the patterned features from bottom up.
摘要翻译： 在具有图案特征的基板上沉积金属膜的方法包括将具有图案化特征的基板放置在光致化学气相沉积（PI-CVD）处理室中。 该方法还包括通过PI-CVD沉积金属膜以从下向上填充图案化特征。
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公开(公告)号：US20130140987A1
公开(公告)日：2013-06-06
申请号：US13308614
申请日：2011-12-01
IPC分类号： H01J37/06
CPC分类号： H01J37/026 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/06 , H01J37/3171 , H01J2237/0041 , H01J2237/31705
摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。
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公开(公告)号：US20130068960A1
公开(公告)日：2013-03-21
申请号：US13235088
申请日：2011-09-16
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
摘要翻译： 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号来确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。
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公开(公告)号：US20130045606A1
公开(公告)日：2013-02-21
申请号：US13210998
申请日：2011-08-16
IPC分类号： H01L21/306 , B08B3/08 , B08B3/02
CPC分类号： H01L21/67051 , B08B3/024
摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要翻译： 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。
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公开(公告)号：US20120202156A1
公开(公告)日：2012-08-09
申请号：US13022931
申请日：2011-02-08
申请人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/32139 , H01L21/823814 , H01L21/823828
摘要： A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
摘要翻译： 提供一种制造集成电路的方法。 该方法包括提供具有感光层的基底。 感光层暴露于辐射束。 曝光的感光层在第一室中显影。 在第一室中，对显影的感光层进行清洁处理。 清洁方法包括使用包括臭氧，过氧化氢和草酸中的至少一种的冲洗溶液。
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公开(公告)号：US20120051872A1
公开(公告)日：2012-03-01
申请号：US12869171
申请日：2010-08-26
申请人： Shao-Yen Ku , Chi-Ming Yang , Chiang Ming-Tsao , Yu-Fen Tzeng , Chin-Hsiang Lin
发明人： Shao-Yen Ku , Chi-Ming Yang , Chiang Ming-Tsao , Yu-Fen Tzeng , Chin-Hsiang Lin
IPC分类号： H01L21/677
CPC分类号： H01L21/67011 , H01L21/67155 , H01L21/67201 , H01L21/677 , H01L21/67703 , H01L21/67745 , H01L21/67772 , H01L21/67778 , Y10S414/135 , Y10S414/139
摘要： The present disclosure provides a system and method for processing a semiconductor substrate wherein a substrate is received at a load lock interface. The substrate is transferred from the load lock interface to a process module using a first module configured for unprocessed substrates. A manufacturing process is performed on the substrate within the process module. Thereafter, the substrate is transferred from the process module to the load lock interface using a second module configured for processed substrates.
摘要翻译： 本公开提供了一种用于处理半导体衬底的系统和方法，其中在负载锁定接口处接收衬底。 使用配置为未处理基板的第一模块将基板从加载锁定接口传送到处理模块。 在处理模块内的基板上进行制造工艺。 此后，使用配置成处理的基板的第二模块将基板从处理模块传送到加载锁定接口。
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公开(公告)号：US20120001262A1
公开(公告)日：2012-01-05
申请号：US12829664
申请日：2010-07-02
IPC分类号： H01L29/78 , B24B7/00 , H01L21/306
CPC分类号： H01L23/5386 , H01L21/02074 , H01L21/28079 , H01L21/67011 , H01L21/7684 , H01L29/495 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
摘要翻译： 本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。 在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体 和电介质层。 该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。
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公开(公告)号：US07776757B2
公开(公告)日：2010-08-17
申请号：US12354394
申请日：2009-01-15
申请人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/28088 , H01L21/823857 , H01L29/517
摘要： The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F-] concentration greater than 0.01M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than −1.4 volts.
摘要翻译： 本公开提供了一种用于制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，通过原位沉积工艺形成第一金属层和第一硅层，图案化第一硅 以去除覆盖在第二区域上的部分，使用图案化的第一硅层作为掩模来图案化第一金属层，以及去除图案化的第一硅层，包括施加溶液。 该溶液包括具有大于0.01M的[F-]浓度的第一组分，构成为将溶液的pH调节至约4.3至约6.7的第二组分，以及构成为将溶液的电位调节为 大于-1.4伏。
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