公开(公告)号：US20240045350A1

公开(公告)日：2024-02-08

申请号：US18360102

申请日：2023-07-27

申请人： Toshihiko Sugiyama ,  Junichi Watanabe ,  Yuka Mizoguchi ,  Kazuoki Fuwa

发明人： Toshihiko Sugiyama ,  Junichi Watanabe ,  Yuka Mizoguchi ,  Kazuoki Fuwa

IPC分类号： G03G9/087 ,  C08G63/183 ,  C08G18/10 ,  C08G18/42 ,  C08G18/75

CPC分类号： G03G9/08755 ,  C08G63/183 ,  C08G18/10 ,  C08G18/4225 ,  C08G18/755

摘要： A resin particle contains a binder resin, wherein the resin particle has a loss tangent δ of 1.8 or greater at angular velocity of from 0.1 to 100 rad/s as measured by frequency sweep at 80 degrees C.

公开(公告)号：US10324390B2

公开(公告)日：2019-06-18

申请号：US15884559

申请日：2018-01-31

申请人： Akihiro Takeyama ,  Junichi Watanabe ,  Takahiro Kadota

发明人： Akihiro Takeyama ,  Junichi Watanabe ,  Takahiro Kadota

IPC分类号： G03G9/097 ,  G03G9/087 ,  G03G9/08

摘要： A toner is provided. The toner includes a resin and a fluorine-containing component. The toner satisfies the following formula: 5.0≤FXPS/FXRF≤25.0 where FXPS (atomic %) represents a content rate of fluorine atom in the toner determined by X-ray photoelectron spectroscopy (XPS) and FXRF (weight %) represents another content rate of fluorine atom in the toner determined by X-ray fluorescence analysis (XRF).

公开(公告)号：US20160334722A1

公开(公告)日：2016-11-17

申请号：US15134575

申请日：2016-04-21

申请人： Keiji MAKABE ,  Tsuneyasu Nagatomo ,  Kohsuke Satoh ,  Junichi Watanabe ,  Kenji Yoneda ,  Daichi Hisakuni

发明人： Keiji MAKABE ,  Tsuneyasu Nagatomo ,  Kohsuke Satoh ,  Junichi Watanabe ,  Kenji Yoneda ,  Daichi Hisakuni

IPC分类号： G03G9/00

CPC分类号： G03G9/0821 ,  G03G9/0819 ,  G03G9/0827 ,  G03G9/08755 ,  G03G9/08764 ,  G03G15/08 ,  G03G21/18

摘要： A toner includes a base particle; and an external additive covering the base particle. The toner includes a tetrahydrofuran (THF)-insoluble component having a glass transition temperature determined from a DSC curve when heated for the second time of from −50° C. to 10° C. and an average circularity not greater than 0.98, and satisfies the following relation: Bt−0.025×Ct≦1.80 wherein Bt represents a BET specific surface area [m2/g]; and Ct represents a coverage [%] of the external additive covering the base particle.

公开(公告)号：US08563869B2

公开(公告)日：2013-10-22

申请号：US12065009

申请日：2006-08-17

申请人： Youichirou Kaga ,  Hisayuki Imamura ,  Junichi Watanabe

发明人： Youichirou Kaga ,  Hisayuki Imamura ,  Junichi Watanabe

IPC分类号： H05K1/00 ,  H05K7/20 ,  H01L23/00 ,  H01R43/00 ,  B23K31/02

CPC分类号： H01L23/3735 ,  H01L23/15 ,  H01L23/3731 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K1/0271 ,  H05K1/0306 ,  H05K2201/0352 ,  H05K2201/0355 ,  H05K2201/09736 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49155 ,  H01L2924/014 ,  H01L2924/00

摘要： A circuit board and a semiconductor module with high endurance against thermal cycles, and which is hard to be broken under thermal cycles, even if thick metal circuit board and thick metal heat sink are used, corresponding to high power operation of a semiconductor chip are provided. This circuit board includes, an insulating-ceramic substrate, a metal circuit plate bonded to one face of the insulating-ceramic substrate, a metal heat sink bonded to another face of the insulating-ceramic substrate, wherein (t12−t22)/tc2/K

摘要翻译： 即使使用与半导体芯片的大功率操作相对应的厚金属电路板和厚金属散热器，也可以提供耐热循环耐久性高且难以在热循环下断开的电路板和半导体模块 。 该电路板包括绝缘陶瓷基板，与绝缘陶瓷基板的一面接合的金属电路板，与绝缘陶瓷基板的另一面接合的金属散热器，其中（t12-t22）/ tc2 / K <1.5，绝缘陶瓷基板的厚度为tc，金属电路板的厚度为t1，金属散热器的厚度为t2，绝缘陶瓷基板的内部断裂韧性值为K.

公开(公告)号：US08223977B2

公开(公告)日：2012-07-17

申请号：US11892920

申请日：2007-08-28

申请人： Junichi Watanabe

发明人： Junichi Watanabe

IPC分类号： H04R5/00 ,  H04R1/02 ,  H04R9/08 ,  H04R11/04 ,  E04B1/82

CPC分类号： H04R1/406 ,  H04R1/34

摘要： Sound waves having a proper phase difference are received by microphones fixed in a mesh-formed casing, while other sound waves pass through the casing, and reach a front surface of a diffuse reflection member. The randomly uneven front surface of the diffuse reflection member diffusely reflects the sound waves, thereby preventing the reflected sound waves from reaching the microphones at the proper phase difference. Any reflected sound waves that do reach the microphones are received at a phase difference that is different from the proper phase difference and are determined to be noise by a sound-source determining circuit, thereby enabling a sound receiver to receive only sound waves having the proper phase difference, and hence, improving directivity thereof.

摘要翻译： 具有适当相位差的声波被固定在网状壳体中的麦克风接收，而其它声波通过壳体，并到达漫反射构件的前表面。 漫反射构件的随机不均匀的前表面漫反射声波，从而防止反射的声波以适当的相位差到达麦克风。 任何到达麦克风的反射声波以与正确的相位差不同的相位差被接收，并被声源确定电路确定为噪声，从而使得声音接收器仅接收具有适当的声音的声波 相位差，从而提高其方向性。

公开(公告)号：US20120171785A1

公开(公告)日：2012-07-05

申请号：US13417811

申请日：2012-03-12

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

公开(公告)号：US20110272187A1

公开(公告)日：2011-11-10

申请号：US13138136

申请日：2010-01-13

申请人： Youichirou Kaga ,  Hisayuki Imamura ,  Junichi Watanabe

发明人： Youichirou Kaga ,  Hisayuki Imamura ,  Junichi Watanabe

IPC分类号： H05K1/18 ,  C08K3/10 ,  C04B35/584 ,  H05K1/03

CPC分类号： H05K1/0306 ,  C04B35/584 ,  C04B35/622 ,  H01L23/15 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K3/0061 ,  H05K2201/0355 ,  H05K2203/1126 ,  H01L2924/00

摘要： Provided is a manufacturing method with which a high thermal conductivity silicon nitride substrate having excellent sintering performance can be manufactured without the occurrence of a molding crack or degreasing crack, as well as to provide a silicon nitride substrate, and a silicon nitride circuit board and a semiconductor module using said silicon nitride substrate.In this silicon nitride substrate manufacturing method, in which a slurry is produced by mixing a silicon nitride powder, a sintering additive powder, and a binder in an organic solvent which is a dispersion medium, and the slurry is formed into a sheet, followed by degreasing and sintering, the oxygen content of the silicon nitride powder is 2.0 mass % or less and the specific surface area of the same is 3 to 11 m2/g, the additive ratio of the sintering additive powder is 4 to 15 mol %, and the water content ratio of the organic solvent is 0.03 to 3 mass %.

摘要翻译： 提供一种可以制造出具有优异的烧结性能的高导热性氮化硅衬底而不发生模制裂纹或脱脂裂纹以及提供氮化硅衬底和氮化硅电路板和 使用所述氮化硅衬底的半导体模块。 在该氮化硅衬底制造方法中，其中通过在作为分散介质的有机溶剂中混合氮化硅粉末，烧结添加剂粉末和粘合剂来制备浆料，并且将浆料形成为片材，然后 脱脂烧结，氮化硅粉末的氧含量为2.0质量％以下，比表面积为3〜11m 2 / g，烧结添加剂粉末的添加比例为4〜15摩尔％， 有机溶剂的含水率为0.03〜3质量％。

公开(公告)号：US20110176277A1

公开(公告)日：2011-07-21

申请号：US12737316

申请日：2009-07-03

申请人： Youichirou Kaga ,  Junichi Watanabe

发明人： Youichirou Kaga ,  Junichi Watanabe

IPC分类号： H05K7/20 ,  H05K1/00 ,  C04B35/586 ,  C04B35/64

CPC分类号： H05K1/0306 ,  C04B35/584 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3852 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  H01L23/12 ,  H01L23/15 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： Provided are a silicon nitride substrate made of a silicon nitride sintered body that is high in strength and thermal conductivity, a method of producing the silicon nitride substrate, and a silicon nitride circuit substrate and a semiconductor module that use the silicon nitride substrate.According to the silicon nitride sintered body, in a silicon nitride substrate consisting of crystal grains 11 of β-type silicon nitride and a grain boundary phase containing at least one type of rare earth element (RE), magnesium (Mg) and silicon (Si), the grain boundary phase consists of an amorphous phase 12 and a MgSiN2 crystal phase 13; the X-ray diffraction peak intensity of any crystal plane of a crystal phase containing the rare earth element (RE) is less than 0.0005 times the sum of the diffraction peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the β-type silicon nitride; and the X-ray diffraction peak intensity of (121) of the MgSiN2 crystal phase 13 is 0.0005 to 0.003 times the sum of the X-ray diffraction peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the β-type silicon nitride.

摘要翻译： 提供一种由强度和导热性高的氮化硅烧结体制造的氮化硅衬底，制造氮化硅衬底的方法以及使用该氮化硅衬底的氮化硅电路衬底和半导体模块。 根据氮化硅烧结体，在由氮化硅的晶粒11和含有至少一种类型的稀土元素（RE）的晶界相组成的氮化硅衬底中，镁（Mg）和硅（ Si），晶界相由非晶相12和MgSiN 2晶相13组成; 含有稀土元素（RE）的晶相的任何晶面的X射线衍射峰强度小于（110），（200），（101），（210）的衍射峰强度之和的0.0005倍 ），（201），（310），（320）和（002） MgSiN 2结晶相13的（121）的X射线衍射峰强度为（110），（200），（101），（210），（210），（210）的X射线衍射峰强度之和的0.0005〜 （201），（310），（320）和（002）。

公开(公告)号：US20090224399A1

公开(公告)日：2009-09-10

申请号：US12379868

申请日：2009-03-03

申请人： Youichirou Kaga ,  Junichi Watanabe

发明人： Youichirou Kaga ,  Junichi Watanabe

IPC分类号： H01L23/34 ,  H05K1/00 ,  C04B35/64 ,  B32B3/10 ,  B32B18/00

CPC分类号： C04B35/5935 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/662 ,  C04B2235/787 ,  C04B2235/963 ,  C04B2235/9638 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K1/0306 ,  H05K3/0011 ,  H05K2203/025 ,  H05K2203/1105 ,  H05K2203/1536 ,  Y10T428/24926 ,  H01L2924/00

摘要： A silicon nitride substrate having appropriately adjusted warpage and surface roughness can be obtained by mixing magnesium oxide of 3 to 4 wt % and at least one kind of rare-earth element oxide of 2 to 5 wt % with silicon nitride source material powder to form a sheet-molded body, sintering the sheet-molded body, and performing a heat treatment at a temperature of 1,550 to 1,700 degree C. with a pressure of 0.5 to 6.0 kPa with a plurality of substrates being stacked. Also, a silicon nitride circuit board and a semiconductor module using the same are provided.

摘要翻译： 通过将3〜4重量％的氧化镁和2〜5重量％的至少一种稀土元素氧化物与氮化硅源材料粉末混合，可以得到适当调整的翘曲和表面粗糙度的氮化硅衬底，以形成 片状成型体，烧结片状成型体，并且在0.5〜6.0kPa的压力下在1550〜1700℃的温度下进行热处理，堆叠多个基板。 此外，提供了氮化硅电路板和使用其的半导体模块。

公开(公告)号：US20070297630A1

公开(公告)日：2007-12-27

申请号：US11892920

申请日：2007-08-28

申请人： Junichi Watanabe

发明人： Junichi Watanabe

IPC分类号： H04R9/08 ,  H04R11/04 ,  H04R17/02

CPC分类号： H04R1/406 ,  H04R1/34

摘要： Sound waves having a proper phase difference are received by microphones fixed in a mesh-formed casing, while other sound waves pass through the casing, and reach a front surface of a diffuse reflection member. The randomly uneven front surface of the diffuse reflection member diffusely reflects the sound waves, thereby preventing the reflected sound waves from reaching the microphones at the proper phase difference. Any reflected sound waves that do reach the microphones are received at a phase difference that is different from the proper phase difference and are determined to be noise by a sound-source determining circuit, thereby enabling a sound receiver to receive only sound waves having the proper phase difference, and hence, improving directivity thereof.

摘要翻译： 具有适当相位差的声波被固定在网状壳体中的麦克风接收，而其它声波通过壳体，并到达漫反射构件的前表面。 漫反射构件的随机不均匀的前表面漫反射声波，从而防止反射的声波以适当的相位差到达麦克风。 任何到达麦克风的反射声波以与正确的相位差不同的相位差被接收，并被声源确定电路确定为噪声，从而使得声音接收器仅接收具有适当的声音的声波 相位差，从而提高其方向性。