公开(公告)号：US07811877B2

公开(公告)日：2010-10-12

申请号：US11778252

申请日：2007-07-16

申请人： Sundar Ramamurthy ,  Majeed A. Foad

发明人： Sundar Ramamurthy ,  Majeed A. Foad

IPC分类号： H01L21/8238

CPC分类号： H01L29/7833 ,  H01L21/26513 ,  H01L21/823814 ,  H01L29/665

摘要： Methods of processing silicon substrates to form metal silicide layers thereover having more uniform thicknesses are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover; doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover; and forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.

摘要翻译： 本文提供了处理硅衬底以形成具有更均匀厚度的金属硅化物层的方法。 在一些实施例中，处理衬底的方法包括提供具有包括硅的多个暴露区域的衬底，其中多个暴露区域中的至少两个具有与其上不同的金属硅化物层的形成速率; 掺杂至少一个暴露区域以控制其上的金属硅化物层的形成速率; 以及在所述衬底的所述暴露区域上形成金属硅化物层，其中所述金属硅化物层在所述暴露区域之间具有减小的最大厚度差。

公开(公告)号：US20100190324A1

公开(公告)日：2010-07-29

申请号：US12550142

申请日：2009-08-28

申请人： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L21/31138

摘要： A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

摘要翻译： 在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。 该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。 在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。 连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。

公开(公告)号：US20100112794A1

公开(公告)日：2010-05-06

申请号：US12606897

申请日：2009-10-27

申请人： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

发明人： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

IPC分类号： H01L21/425

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将材料注入衬底的方法。 在一个实施例中，用于将材料注入衬底的方法包括将衬底提供到处理室中，所述衬底包括其上形成有材料层的衬底表面，产生非掺杂剂处理气体的第一等离子体，暴露材料层 涉及非掺杂剂处理气体的等离子体，产生掺杂剂处理气体的第二等离子体，所述掺杂剂处理气体包括适于产生掺杂剂离子的反应气体，以及将等离子体中的掺杂剂离子注入材料层。 该方法还可以包括清洁或蚀刻工艺。

公开(公告)号：US20100112793A1

公开(公告)日：2010-05-06

申请号：US12606877

申请日：2009-10-27

申请人： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

发明人： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

IPC分类号： H01L21/265 ,  H01L21/302 ,  H01L21/322

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，所述衬底包括具有形成在其中的一个或多个特征的衬底表面，并且每个特征具有一个或多个水平表面和一个或多个垂直表面， 来自包括适于产生离子的反应气体的气体混合物的等离子体，在衬底表面上沉积材料层和在衬底特征的至少一个水平表面上，通过各向同性方法将等离子体离子注入到衬底中至少 一个水平表面并且进入至少一个垂直表面，并且通过各向异性工艺蚀刻衬底表面上的材料层和至少一个水平表面。

公开(公告)号：US07691755B2

公开(公告)日：2010-04-06

申请号：US11748783

申请日：2007-05-15

申请人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

发明人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

IPC分类号： H01L21/00 ,  H01L21/26

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

摘要翻译： 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生通过该室的六十种物质的环形等离子体电流，以在室内的表面上沉积SixOy材料的调味层，同时离开基座而没有晶片，以便 露出基座的晶片支撑表面。

公开(公告)号：US20080188013A1

公开(公告)日：2008-08-07

申请号：US12025243

申请日：2008-02-04

申请人： Seon-Mee Cho ,  Majeed A. Foad

发明人： Seon-Mee Cho ,  Majeed A. Foad

IPC分类号： H01L21/66 ,  C23F1/08 ,  C23C16/44

CPC分类号： C23C16/52 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/3321 ,  H01J2237/334

摘要： The present invention generally provides methods and apparatus for monitoring ion dosage during a plasma process. One embodiment of the present invention provides a method for processing a substrate comprising generating a correlation between the at least one attribute of the plasma and a dosage quantity.

摘要翻译： 本发明通常提供了用于在等离子体处理过程中监测离子剂量的方法和装置。 本发明的一个实施方案提供了一种用于处理基质的方法，包括产生血浆的至少一种属性与剂量之间的相关性。

公开(公告)号：US08900405B2

公开(公告)日：2014-12-02

申请号：US11985579

申请日：2007-11-14

申请人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

发明人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/32412

摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.

摘要翻译： 本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。 在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。 在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

公开(公告)号：US08431911B2

公开(公告)日：2013-04-30

申请号：US12759587

申请日：2010-04-13

申请人： Majeed A. Foad ,  Stephen Moffatt

发明人： Majeed A. Foad ,  Stephen Moffatt

IPC分类号： A61B6/00 ,  G01N21/64 ,  G11B5/02 ,  G11B21/02 ,  G11B11/00 ,  G03G13/00 ,  G03G19/00

CPC分类号： G03B27/42 ,  G11B5/8404 ,  H01F10/187 ,  H01F41/34

摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.

摘要翻译： 提供了一种用于制造磁存储介质的方法和装置。 用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。 通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，光束可以被分成小束束，或者可以通过 一组发射器。 然后通过光学或电场将子束聚焦到期望的尺寸和分布。 所得到的束束可以进一步通过穿过任何所需形状的孔。 所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

公开(公告)号：US20110226617A1

公开(公告)日：2011-09-22

申请号：US13069205

申请日：2011-03-22

申请人： Ralf Hofmann ,  Majeed A. Foad

发明人： Ralf Hofmann ,  Majeed A. Foad

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/06 ,  C23C14/46

CPC分类号： C23C14/3407 ,  C23C14/0036 ,  C23C14/06 ,  C23C14/354 ,  H01J37/32357 ,  H01J37/34 ,  H05H1/46 ,  H05H2001/4667

摘要： A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.

摘要翻译： 溅射沉积系统包括真空室，其包括用于在真空室中保持真空的真空泵，用于向真空室供应处理气体的气体入口，真空室内的溅射靶和衬底保持器，以及附着的等离子体源 到真空室并且远离溅射靶定位，等离子体源被配置成形成延伸到真空室中的高密度等离子体束。 等离子体源可以包括矩形横截面源室，电磁体和射频线圈，其中矩形横截面源室和射频线圈被配置为给予高密度等离子体束细长的卵形横截面 。 此外，溅射靶的表面可以被配置为非平面形式，以在衬底保持器上的衬底的表面处提供均匀的等离子体能量沉积到靶中和/或均匀的溅射沉积。 溅射沉积系统可以包括等离子体扩散系统，用于重新形成高密度等离子体束，以完全和均匀地覆盖溅射靶。

公开(公告)号：US07989329B2

公开(公告)日：2011-08-02

申请号：US11963034

申请日：2007-12-21

申请人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

发明人： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC分类号： H01L21/38

CPC分类号： H01L21/2254 ,  H01L21/2253

摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

摘要翻译： 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。