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    Acoustic semiconductor device
    21.
    发明授权
    Acoustic semiconductor device 失效
    声学半导体器件

    公开(公告)号：US08648431B2

    公开(公告)日：2014-02-11

    申请号：US13220116

    申请日：2011-08-29

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

    IPC分类号： H01L29/84

    CPC分类号： H03J3/20 ,  H03B5/326 ,  H03H9/02566

    摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

    摘要翻译： 根据一个实施例，声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元，并且输入电信号进入声共振单元。

    Thin film piezoelectric actuator
    23.
    发明授权
    Thin film piezoelectric actuator 失效
    薄膜压电致动器

    公开(公告)号：US07675222B2

    公开(公告)日：2010-03-09

    申请号：US11781667

    申请日：2007-07-23

    申请人： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    发明人： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

    IPC分类号： H01L41/08

    CPC分类号： H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

    摘要： A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

    摘要翻译： 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

    VOLTAGE CONTROLLED OSCILLATOR
    25.
    发明申请
    VOLTAGE CONTROLLED OSCILLATOR 失效
    电压控制振荡器

    公开(公告)号：US20070209176A1

    公开(公告)日：2007-09-13

    申请号：US11741473

    申请日：2007-04-27

    申请人： Takashi KAWAKUBO ,  Kazuhide Abe ,  Mayumi Morizuka

    发明人： Takashi KAWAKUBO ,  Kazuhide Abe ,  Mayumi Morizuka

    IPC分类号： H04R17/00 ,  H05K3/10

    CPC分类号： H03H9/173 ,  H03B5/326 ,  H03B5/366 ,  H03H9/0542 ,  H03H2009/02204 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/49005 ,  Y10T29/49155

    摘要： The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

    摘要翻译： 本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。 薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电 电影。 另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜 第一电极和形成在第二压电膜上的第二电极。

    Voltage controlled oscillator
    26.
    发明授权
    Voltage controlled oscillator 失效
    压控振荡器

    公开(公告)号：US07211933B2

    公开(公告)日：2007-05-01

    申请号：US10935264

    申请日：2004-09-08

    申请人： Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

    发明人： Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

    IPC分类号： H01L41/08

    CPC分类号： H03H9/173 ,  H03B5/326 ,  H03B5/366 ,  H03H9/0542 ,  H03H2009/02204 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/49005 ,  Y10T29/49155

    摘要： The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

    摘要翻译： 本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。 薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电 电影。 另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜 第一电极和形成在第二压电膜上的第二电极。

    Tunable filter and portable telephone
    28.
    发明授权
    Tunable filter and portable telephone 失效
    可调滤波器和便携式电话

    公开(公告)号：US07135940B2

    公开(公告)日：2006-11-14

    申请号：US11039872

    申请日：2005-01-24

    申请人： Takashi Kawakubo ,  Ryoichi Ohara ,  Kazuhide Abe ,  Hiroshi Yoshida ,  Hiroshi Tsurumi

    发明人： Takashi Kawakubo ,  Ryoichi Ohara ,  Kazuhide Abe ,  Hiroshi Yoshida ,  Hiroshi Tsurumi

    IPC分类号： H03H21/00 ,  H03H9/54 ,  H03H9/64

    CPC分类号： H03J3/08 ,  H03H9/542 ,  H03H9/605 ,  H03H2210/012 ,  H03H2210/015 ,  H03J1/0008

    摘要： A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.

    摘要翻译： 可调谐滤波器具有多个可变电容器和多个电感器元件，每个电感器元件形成在公共基板上，通过使用多个可变电容器的至少一部分和多个电感器元件的一部分形成的滤波器电路， 通过使用多个可变电容器的至少一部分和多个电感器元件的一部分形成的监视电路，检测监视电路的规定电路常数的检测电路，存储与参考电路有关的信息的存储器 基于由检测电路检测的结果和存储在存储器中的信息，控制监视电路中的可变电容器的电容和滤波器电路中的可变电容器的电容的电容控制电路。

    Semiconductor memory device using ferroelectric capacitor
    30.
    发明授权
    Semiconductor memory device using ferroelectric capacitor 失效
    使用铁电电容器的半导体存储器件

    公开(公告)号：US5909389A

    公开(公告)日：1999-06-01

    申请号：US883600

    申请日：1997-06-26

    申请人： Takashi Kawakubo ,  Kazuhide Abe

    发明人： Takashi Kawakubo ,  Kazuhide Abe

    IPC分类号： G11C14/00 ,  G11C11/22 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11517 ,  H01L28/55

    摘要： A semiconductor memory device has a plurality of memory cells arranged in a matrix format. Each memory cell includes a thin film capacitor with a ferroelectric film and a pair of electrodes opposing each other through the ferroelectric film, and a transfer gate MOS transistor arranged to be connected to the thin film capacitor. The operating voltage value corresponding to the central axis of the polarization hysteresis characteristic curve of the thin film capacitor shifts from 0V by Vf. When no write or read operation is performed for the memory cell, the transistor is turned on, and an adjustment voltage set to be from 0 to 2 Vf is constantly applied across the electrodes of the thin film capacitor.

    摘要翻译： 半导体存储器件具有以矩阵形式布置的多个存储单元。 每个存储单元包括具有铁电膜的薄膜电容器和通过铁电体膜彼此相对的一对电极，以及布置成连接到薄膜电容器的传输门MOS晶体管。 与薄膜电容器的极化滞后特性曲线的中心轴相对应的工作电压值从0V向Vf移动。 当不对存储单元执行写入或读取操作时，晶体管导通，并且设置为0至2Vf的调整电压恒定地施加在薄膜电容器的电极之间。