公开(公告)号：US06432738B1

公开(公告)日：2002-08-13

申请号：US09842999

申请日：2001-04-26

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L2100

摘要： In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge transfer electrodes are in self-alignment with potential barrier regions.

公开(公告)号：US06207981B1

公开(公告)日：2001-03-27

申请号：US09187844

申请日：1998-11-06

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L29768

CPC分类号： H01L29/1062 ,  H01L27/14806 ,  H01L29/76841

摘要： A two-phase, single-ply-electrode type charge-coupled device is provided that has a pair of a potential barrier region and a charge storage region underlying one charge transfer electrode. The charge storage region is formed in such a manner that the potential of the charge storage region becomes gradually deep in charge transfer direction. This structure enables smooth charge transfer.

摘要翻译： 提供两相单层电极型电荷耦合器件，其具有一对势垒区域和一个电荷转移电极下面的电荷存储区域。 电荷存储区域形成为电荷存储区域的电位在电荷转移方向上逐渐变深。 这种结构能够平稳地进行电荷转移。

公开(公告)号：US5576239A

公开(公告)日：1996-11-19

申请号：US455996

申请日：1995-05-31

申请人： Keisuke Hatano ,  Kazuma Minami

发明人： Keisuke Hatano ,  Kazuma Minami

IPC分类号： H01L27/148 ,  H01L21/203 ,  H01L31/0216 ,  H01L21/70

CPC分类号： H01L31/02164

摘要： An aluminum film for covering an interlayer insulating film is formed by sputtering, and is then subjected to a heat treatment at a temperature lower than its melting point to cause a reflow. Then, an opening is formed in the aluminum film, so that a light shielding film is formed in such a way as to cover the step portion with a uniform thickness. Making the light shielding film of a solid state image sensing device thinner permits the opening size of the light shielding film to increase, ensures the effective use of light to improve the sensitivity, and improves the working precision in forming the opening, thus suppressing a variation in the sensitivity of the individual pixels.

摘要翻译： 通过溅射形成用于覆盖层间绝缘膜的铝膜，然后在低于其熔点的温度下进行热处理以引起回流。 然后，在铝膜中形成开口，从而以均匀厚度覆盖台阶部分的方式形成遮光膜。 使固态摄像装置的遮光膜更薄，可以使遮光膜的开口尺寸增大，确保光的有效利用，提高灵敏度，提高成形时的加工精度，抑制变形 在各个像素的灵敏度。

公开(公告)号：US06472255B1

公开(公告)日：2002-10-29

申请号：US09243440

申请日：1999-02-03

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L21339

CPC分类号： H01L27/14843 ,  H01L27/14683 ,  H01L27/14806

摘要： A solid-state imaging device comprises: an electric charge transfer portion for transferring an electric charge produced in a photodetector through photoelectric conversion from incident light to the electric charge; and, an output amplifier portion for detecting the electric charge to issue a signal. The charge transfer portion is provided with a first gate insulation film having a sufficient film thickness to keep a predetermined transfer efficiency. The output amplifier portion is provided with a second gate insulation film having a film thickness suitable for obtaining a predetermined mutual conductance capable of increasing the gain of the output amplifier portion.

摘要翻译： 固态成像装置包括：电荷转移部分，用于将通过光电转换的光电检测器产生的电荷从入射光转移到电荷; 以及用于检测电荷以发出信号的输出放大器部分。 电荷转移部分设置有具有足够膜厚度的第一栅绝缘膜以保持预定的转印效率。 输出放大器部分设置有具有适于获得能够增加输出放大器部分的增益的预定互导的膜厚度的第二栅极绝缘膜。

公开(公告)号：US06392261B1

公开(公告)日：2002-05-21

申请号：US09145342

申请日：1998-09-01

申请人： Keisuke Hatano

发明人： Keisuke Hatano

IPC分类号： H01L29768

CPC分类号： H01L27/14692 ,  H01L27/14812 ,  H01L27/14818

摘要： The film thickness of a second oxide film 105 is set to be larger than that of a first gate oxide film 103 in such a way that, when the identical voltage is applied to both of electrodes, the channel potentials under respective electrodes are ±0.2 V or less. The second gate oxide film 105 is formed by the CVD method and the like.

摘要翻译： 将第二氧化膜105的膜厚设定为大于第一栅极氧化膜103的膜厚，使得当对两个电极施加相同的电压时，各电极下的沟道电位为±0.2V 或更少。 第二栅极氧化膜105通过CVD法等形成。

公开(公告)号：US06188092B1

公开(公告)日：2001-02-13

申请号：US09478688

申请日：2000-01-06

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L27148

CPC分类号： H01L27/14887 ,  H01L23/5252 ,  H01L29/768 ,  H01L2924/0002 ,  H01L2924/00

摘要： A solid imaging device including a substrate voltage generating device possessing high display quality, high reliability, and method of manufacturing. The solid imaging device includes a plurality of photoelectric conversion elements, a vertical charge transfer portion for transferring the signal charges generated by the photoelectric conversion element, and a substrate voltage generating circuit. The substrate generating circuit 10 includes a variable resistor 11 formed by arranging a plurality of sets formed by selection switches 13 and resistors 14a-14e, and a load resistor 12 disposed by connecting with the variable resistor 11 between the source potential Vdd and the earth potential, and the substrate voltage Vsub is obtained from a contact between the variable resistor 11 and the load resistor 12. The selection switches 13 are consituted by antifuse elements.

摘要翻译： 一种固体成像装置，包括具有高显示质量，高可靠性和制造方法的基板电压产生装置。 固体成像装置包括多个光电转换元件，用于传送由光电转换元件产生的信号电荷的垂直电荷转移部分和基板电压产生电路。 基板产生电路10包括通过布置由选择开关13和电阻器14a-14e形成的多个集合形成的可变电阻器11，以及通过与源极电位Vdd和地电位之间的可变电阻器11连接而设置的负载电阻器12 ，并且从可变电阻器11和负载电阻器12之间的接触获得衬底电压Vsub。选择开关13由反熔丝元件构成。

公开(公告)号：US6165908A

公开(公告)日：2000-12-26

申请号：US535734

申请日：2000-03-27

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H01L29/768 ,  H01L21/00

CPC分类号： H01L27/14812 ,  H01L29/768

摘要： In a charge coupled device, a plurality of charge transfer electrodes are formed on a first insulating layer formed on a semiconductor substrate. Each of the charge transfer electrodes is formed by a first conductive layer and a second conductive layer narrower than the first conductive layer. A second insulating layer having the same area as the second conductive layer and is formed on the second conductive layer. A sidewall insulating layer is formed on sidewalls of the second insulating layer and the second conductive layer.

摘要翻译： 在电荷耦合器件中，在形成在半导体衬底上的第一绝缘层上形成多个电荷转移电极。 每个电荷转移电极由比第一导电层窄的第一导电层和第二导电层形成。 具有与第二导电层相同面积并形成在第二导电层上的第二绝缘层。 侧壁绝缘层形成在第二绝缘层和第二导电层的侧壁上。

公开(公告)号：US6143585A

公开(公告)日：2000-11-07

申请号：US109748

申请日：1998-07-06

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/18 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/14601

摘要： A solid state image sensing device comprises a cell area, located at a semiconductor substrate, including photoelectric conversion portions and charge transfer portions and a peripheral circuit area formed around the cell area located at the semiconductor substrate. The peripheral circuit area includes a first p.sup.+ -type semiconductor region and an insulating film with a relatively large thickness formed on the first p.sup.+ -type semiconductor region. The cell area further includes a second p.sup.+ -type semiconductor region and an insulating film with a relatively small thickness formed on the second p.sup.+ -type semiconductor region. The majority of the insulating film with the relatively large thickness is formed by means of a CVD process.

摘要翻译： 固态图像感测装置包括位于半导体基板处的单元区域，包括光电转换部分和电荷转移部分以及形成在位于半导体基板处的单元区域周围的外围电路区域。 外围电路区域包括形成在第一p +型半导体区域上的第一p +型半导体区域和具有相对较大厚度的绝缘膜。 单元区域还包括形成在第二p +型半导体区域上的第二p +型半导体区域和具有相对较小厚度的绝缘膜。 通过CVD工艺形成具有相对较大厚度的绝缘膜的绝大多数。

公开(公告)号：US6081018A

公开(公告)日：2000-06-27

申请号：US327227

申请日：1999-06-07

申请人： Yasutaka Nakashiba ,  Keisuke Hatano

发明人： Yasutaka Nakashiba ,  Keisuke Hatano

IPC分类号： H01L27/146 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/115 ,  H01L27/14 ,  H01L29/788 ,  H01L29/792 ,  H01L31/0216 ,  H04N5/335 ,  H04N5/372 ,  H04N5/374 ,  H04N9/07 ,  H01L31/0232 ,  H01L29/768 ,  H01L31/00

CPC分类号： H01L31/02162

摘要： In a solid state image sensor comprising a pixel array section formed at a semiconductor substrate, and a substrate voltage setting circuit provided at the semiconductor substrate as a peripheral circuit of the pixel array section and including a non-volatile memory transistor, a light block film is formed to cover a gate electrode of the non-volatile memory transistor. This light block film is constituted of the same primary color filters as the primary color filters provided in the pixel array section. Thus, since the injecting of the light to a gate insulating film of the non-volatile memory transistor is prevented, after the electric charges are trapped in the gate insulating film of the non-volatile memory transistor such as the MNOS type, the MONOS type and the floating gate for giving a desired substrate voltage, the variation of the threshold voltage of the non-volatile memory transistor is prevented, with the result that substrate voltage generating circuit of the peripheral circuit can supply the stabilized substrate voltage having less variation, and therefore, the solid state image sensor operates with a high reliability.

摘要翻译： 在包括形成在半导体衬底上的像素阵列部分的固态图像传感器和设置在半导体衬底上的衬底电压设置电路作为像素阵列部分的外围电路并且包括非易失性存储晶体管的光阻挡膜 形成为覆盖非易失性存储晶体管的栅电极。 该遮光膜由与像素阵列部中设置的原色滤色器相同的原色滤色片构成。 因此，由于防止了将光注入非易失性存储晶体管的栅极绝缘膜，所以在电荷被俘获在例如MNOS型的非易失性存储晶体管的栅极绝缘膜中之后，MONOS型 以及用于提供所需衬底电压的浮动栅极，防止了非易失性存储晶体管的阈值电压的变化，从而外围电路的衬底电压产生电路可以提供具有较小变化的稳定衬底电压，以及 因此，固态图像传感器以高可靠性运行。

公开(公告)号：US09365016B2

公开(公告)日：2016-06-14

申请号：US13579671

申请日：2011-02-17

申请人： Hideyuki Sakamoto ,  Keisuke Hatano ,  Kouji Morita ,  Yukihiro Shimamoto

发明人： Hideyuki Sakamoto ,  Keisuke Hatano ,  Kouji Morita ,  Yukihiro Shimamoto

IPC分类号： B32B27/08 ,  B32B27/30 ,  C08F220/22 ,  B32B27/28 ,  C08F220/24 ,  B32B27/36

CPC分类号： B32B27/28 ,  B32B27/08 ,  B32B27/302 ,  B32B27/304 ,  B32B27/308 ,  B32B27/365 ,  B32B2250/24 ,  B32B2270/00 ,  C08F220/22 ,  C08F220/24 ,  Y10T428/24967 ,  Y10T428/3154 ,  C08F2220/1808

摘要： Provided are a fluorine-containing (meth)acrylic (co)polymer that scarcely generates gas when subjected to molding process, and is capable of supplying a molded body excellent in external appearance and transparency; a fluorine-containing (meth)acrylic resin film thereof; and a fluororesin laminated resin film having the same properties. The (co)polymer is a fluorine-containing (meth)acrylic (co)polymer obtained by polymerizing a monomer component including 100 to 70% by weight of a fluoroalkyl(meth)acrylate monomer, and 0 to 30% by weight of a different monomer copolymerizable therewith by effect of a radical polymerization initiator having a solubility in water of 0.1% or less by weight at 25 C, and having 8 to 14 carbon atoms.

摘要翻译： 提供在进行成型时几乎不产生气体的含氟（甲基）丙烯酸（共）聚合物，能够提供外观和透明性优异的成型体; 含氟（甲基）丙烯酸树脂膜; 和具有相同特性的氟树脂层压树脂膜。 （共）聚合物是通过聚合包含100至70重量％的（甲基）丙烯酸氟烷基酯单体和0至30重量％的不同的（甲基）丙烯酸酯单体的单体组分而获得的含氟（甲基）丙烯酸（共）聚合物 通过自由基聚合引发剂在25℃下在水中的溶解度为0.1重量％以下且具有8〜14个碳原子的单体可共聚合的单体。