公开(公告)号：US20050172901A1

公开(公告)日：2005-08-11

申请号：US10515626

申请日：2003-05-30

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as a wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector.

摘要翻译： 等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分 通过这个顶板。 顶板在其内设有反射构件。 反射构件的侧壁作为用于反射在顶板中在半径方向上传播的高频波的波反射体。 或者，不能以顶板的凹部的侧壁作为波反射体的方式设置反射构件。

公开(公告)号：US5350920A

公开(公告)日：1994-09-27

申请号：US994953

申请日：1992-12-22

申请人： Hirofumi Fukuyama ,  Tatuya Noguchi ,  Kenichi Inoue ,  Kiyotaka Ishibashi ,  Shigeto Adachi

发明人： Hirofumi Fukuyama ,  Tatuya Noguchi ,  Kenichi Inoue ,  Kiyotaka Ishibashi ,  Shigeto Adachi

IPC分类号： G01N23/225 ,  G01Q90/00 ,  H01J37/04 ,  H01J37/09 ,  H01J37/22 ,  H01J37/252 ,  H01J37/256 ,  H01J37/28

CPC分类号： H01J37/263 ,  H01J37/22 ,  H01J37/256

摘要： An ion beam analyzing apparatus wherein a scan image displayed on display means and the profile of an ion beam can be made coincide with each other readily to assure a high operability. Slit members for X and Y directions of an objector collimator are provided for movement to vary the dimensions of slits defined thereby, and dimensions A and B of the slits in the X and Y directions are detected. Dimensions X' and Y' of a spot of an ion beam irradiated upon a specimen on a target are calculated by multiplying the dimensions A and B by reduction ratios fx and fy of quadruple pole magnetic lenses, respectively, and then the dimensions X' and Y' are multiplied by values obtained by division of conditions Cx and Cy of an image apparatus by current scanning widths Sx and Sy of deflecting electrodes to calculate enlarged beam spot diameters X" and Y" respectively. An image having the diameters X" and Y" is displayed on a cathode ray tube so that an operator can visually grasp it. Consequently, a scan image of the specimen and the profile of the ion beam can be made coincide readily with each other by manual operation of a manually operable mechanism of a beam position setter.

摘要翻译： 一种离子束分析装置，其中可以使显示装置上显示的扫描图像和离子束的轮廓彼此一致，以确保高可操作性。 提供了用于移动以使由此限定的狭缝的尺寸变化的反射器准直器的X和Y方向的狭缝构件，并且检测X和Y方向上狭缝的尺寸A和B. 通过将尺寸A和B分别乘以四极磁性透镜的减速比fx和fy分别计算照射到目标上的样本上的离子束点的尺寸X'和Y'，然后将尺寸X'和 Y'乘以通过用偏转电极的当前扫描宽度Sx和Sy分割图像装置的条件Cx和Cy分割获得的值，以分别计算扩大的光点直径X“和Y”。 具有直径X“和Y”的图像显示在阴极射线管上，使得操作者可以在视觉上掌握它。 因此，可以通过手动操作光束位置设定器的手动操作的机构，使样本的扫描图像和离子束的轮廓容易地彼此一致。

公开(公告)号：US09177846B2

公开(公告)日：2015-11-03

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/683 ,  C23C16/458 ,  H01L21/687

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US08967080B2

公开(公告)日：2015-03-03

申请号：US12867343

申请日：2009-02-10

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

摘要： A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.

摘要翻译： 等离子体处理装置的等离子体生成室由顶板3封闭。顶板3在其表面上具有面向等离子体产生室的凹部3A和相对表面上的中心凹部3B。 顶板3与天线耦合。 如果向天线提供微波，则微波通过天线的狭槽辐射。 微波通过顶板3传播，使得微波具有偏振面，微波整体形成圆偏振波。 这里，微波的共振吸收发生在凹部3A的侧面，微波在单个模式下在凹部3A内传播。 可以在每个凹部3A内产生强等离子体，从而可以在顶板3中产生稳定的等离子体模式。

公开(公告)号：US20140102367A1

公开(公告)日：2014-04-17

申请号：US14118993

申请日：2012-05-21

申请人： Kiyotaka Ishibashi

发明人： Kiyotaka Ishibashi

IPC分类号： C23C16/511

CPC分类号： C23C16/511 ,  C23C16/45536 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32357 ,  H01J37/3244

摘要： A plasma processing device including a stage for holding a substrate, a processing vessel, a first supply unit, a masking portion, a dielectric member, a microwave introduction unit, and a second supply unit. The first supply unit supplies a first process gas for layer deposition to the processing space. The masking portion is electrically conductive and has a first surface facing the processing space, a second surface at an opposite side, and one or more through holes extending from the first surface to the second surface. The dielectric member is in contact with the second surface of the masking portion, and is formed with one or more cavities connected to the one or more through holes. The microwave introduction unit introduces microwaves to the dielectric member. The second supply unit supplies a second process gas for plasma processing into the cavities of the dielectric member.

摘要翻译： 一种等离子体处理装置，包括用于保持基板的台，处理容器，第一供应单元，掩模部分，电介质构件，微波引入单元和第二供应单元。 第一供应单元为处理空间提供用于层沉积的第一处理气体。 掩模部分是导电的并且具有面向处理空间的第一表面，相对侧的第二表面和从第一表面延伸到第二表面的一个或多个通孔。 电介质构件与掩模部分的第二表面接触，并且形成有连接到一个或多个通孔的一个或多个空腔。 微波引入单元向介电构件引入微波。 第二供应单元将等离子体处理的第二处理气体供应到电介质构件的空腔中。

公开(公告)号：US08419859B2

公开(公告)日：2013-04-16

申请号：US12528734

申请日：2008-02-18

申请人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

发明人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC分类号： B08B7/00

CPC分类号： C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

摘要： A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

摘要翻译： 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。

公开(公告)号：US08387560B2

公开(公告)日：2013-03-05

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US08343308B2

公开(公告)日：2013-01-01

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部， 面向处理室的内部。

公开(公告)号：US20120118505A1

公开(公告)日：2012-05-17

申请号：US13379219

申请日：2010-05-20

申请人： Kiyotaka Ishibashi

发明人： Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/511

CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/32238

摘要： A coolant flow path for cooling a dielectric window of a side wall of a processing container of the plasma processing apparatus is provided. A coolant flows in a liquid or gaseous state in the coolant flow path without phase transition. At least a portion of the coolant flow path extending in a circumferential direction of the side wall has a cross-sectional area decreased toward downstream from upstream.

摘要翻译： 提供了用于冷却等离子体处理装置的处理容器的侧壁的电介质窗口的冷却剂流路。 冷却剂在冷却剂流动路径中以液态或气态流动而没有相变。 沿侧壁的圆周方向延伸的冷却剂流路的至少一部分具有朝向上游的下游减小的横截面面积。

公开(公告)号：US08069704B2

公开(公告)日：2011-12-06

申请号：US12419574

申请日：2009-04-07

申请人： Kiyotaka Ishibashi ,  Yoshiharu Kishida

发明人： Kiyotaka Ishibashi ,  Yoshiharu Kishida

IPC分类号： G01M3/02

CPC分类号： H01L21/67069 ,  C23C16/54

摘要： A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.

摘要翻译： 对应于密封结构的闸阀密封等离子体产生室的开口，并且包括阀体，阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。 第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。 第一和第二环形密封构件彼此不接触，即在它们之间形成间隙。 在第一环形密封构件的长度方向上布置有多个气体槽。 通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽，该间隙经由气体槽与等离子体生成室连通。 在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。 在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部，该凹部与气体喷出通路的气体出口连接。