公开(公告)号：US5828098A

公开(公告)日：1998-10-27

申请号：US667913

申请日：1996-06-20

申请人： Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Masamichi Azuma

发明人： Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Masamichi Azuma

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L29/43

CPC分类号： H01L28/60 ,  H01L21/31691 ,  H01L29/92 ,  H01L28/55

摘要： This invention relates to a semiconductor device with embedded capacitor elements of which capacitor insulation layer is made of ferroelectric layer or dielectric layer of high dielectric constant, and its manufacturing method. This invention is made in order to solve the problems of rapid increase of leak current of capacitor element and the poor reliability caused by the large deviation of crystal sizes of conventional capacitor insulation layer of capacitor element incorporated in the semiconductor device. This is accomplished by the invention of a capacitor element consisting of a substrate of semiconductor integrated circuit, a first electrode selectively deposited on the surface of said substrate, a capacitor insulation layer having a high dielectric constant deposited selectively on the surface of said first electrode, and a second electrode deposited on the surface of said capacitor insulation layer avoiding the contact with the first electrode, of which average grain diameters of crystal grains constituting the capacitor insulation layer are within a range of 5 to 20 nm, and the standard deviation of the sizes of crystal grains constituting said capacitor insulation layer is within 3 nm.

摘要翻译： 本发明涉及一种具有埋入式电容器元件的半导体器件及其制造方法，电容器绝缘层由铁电层或高介电常数介电层制成。 本发明是为了解决电容器元件的漏电流急剧增加的问题，以及由半导体器件中的电容器元件的常规电容绝缘层的晶体尺寸的大偏差导致的可靠性差。 这是通过由半导体集成电路的衬底，选择性地沉积在所述衬底的表面上的第一电极，选择性沉积在所述第一电极的表面上的具有高介电常数的电容器绝缘层的电容器元件的发明来实现的， 以及沉积在所述电容器绝缘层的表面上的第二电极，避免与构成电容器绝缘层的晶粒的平均晶粒直径的第一电极的接触在5nm至20nm的范围内，并且 构成所述电容器绝缘层的晶粒尺寸在3nm以内。

公开(公告)号：US5920574A

公开(公告)日：1999-07-06

申请号：US932894

申请日：1997-09-18

申请人： Yasuhiro Shimada ,  Keisaku Nakao ,  Atsuo Inoue ,  Masamichi Azuma ,  Eiji Fujii

发明人： Yasuhiro Shimada ,  Keisaku Nakao ,  Atsuo Inoue ,  Masamichi Azuma ,  Eiji Fujii

IPC分类号： G01R31/26 ,  G01R31/28 ,  G01R31/30 ,  G11C11/22 ,  G11C29/50 ,  G11C29/56 ,  H01L21/66 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  G11C29/00 ,  G01R1/04

CPC分类号： G11C29/50016 ,  G11C29/50 ,  G11C11/22 ,  G11C2029/5002

摘要： A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t.sub.1 =t.sub.2.sup.m between an information holding lifetime t.sub.1 at a temperature T.sub.1 and another lifetime t.sub.2 at another temperature T.sub.2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t.sub.2 at the temperature T.sub.2 on the basis of the information holding lifetime t.sub.1 at the temperature T.sub.1 using the relational expression.

摘要翻译： 一种用于半导体器件的加速测试的方法包括以下步骤：确定在温度T1下的信息保持寿命t1和在另一温度T2的另一寿命t2之间的关系表达式t1 = t2m，其表示作为温度的函数的指数m 与玻耳兹曼因子成正比，并且使用关系式，基于温度T1下的信息保持寿命t1计算温度T2下的信息保持期限t2。

公开(公告)号：US06659352B1

公开(公告)日：2003-12-09

申请号：US09584542

申请日：2000-05-31

申请人： Hiroaki Asada ,  Joji Nakane ,  Tatsumi Sumi ,  Taketoshi Matsuura ,  Atsuo Inoue

发明人： Hiroaki Asada ,  Joji Nakane ,  Tatsumi Sumi ,  Taketoshi Matsuura ,  Atsuo Inoue

IPC分类号： G06K1906

CPC分类号： G06K19/0701 ,  G06K19/0723 ,  H02M2001/0022 ,  H02M2001/0025

摘要： A semiconductor integrated circuit which obtains a driving power from a carrier onto which data has been piggybacked, the semiconductor integrated circuit being characterized by demodulating data by correctly discriminating it even when the obtained power supply voltage has become overvoltage, and characterized by effectively using the power supplied by the carrier. The semiconductor integrated circuit includes: a two-voltage rectifier circuit as a power source circuit 111; a voltage regulator circuit 112 which exercises a control so that a power with a higher voltage (VDDH) used for demodulating data does not exceed a certain voltage value; a resistor 141; and a capacitor 142. With this construction, the voltage input to a regulator circuit 1121 as the reference voltage changes in correspondence to the change in voltage VDDH which is caused by the change in amplitude.

摘要翻译： 一种半导体集成电路，其从已经搭载数据的载体获得驱动电力，其特征在于，即使当所获得的电源电压已经变得过电压时，通过正确地识别数据来解调数据，并且其特征在于有效地使用电力 由承运人提供。 半导体集成电路包括：作为电源电路111的双电压整流电路; 电压调节器电路112，其进行控制，使得用于解调数据的具有较高电压（VDDH）的功率不超过一定电压值; 电阻器141; 和电容器142.通过这种结构，作为参考电压输入到调节器电路1121的电压对应于由振幅变化引起的电压VDDH的变化。

公开(公告)号：US08901891B2

公开(公告)日：2014-12-02

申请号：US13218193

申请日：2011-08-25

申请人： Atsuo Inoue ,  Noriaki Matsuno

发明人： Atsuo Inoue ,  Noriaki Matsuno

IPC分类号： H02J7/00 ,  G01R19/14 ,  G01R31/36

CPC分类号： G01R19/14 ,  G01R31/3613

摘要： A voltage polarity determination circuit includes an integration circuit, a switch, and a time measurement circuit. The integration circuit includes an operational amplifier circuit having an input offset voltage which is larger than the maximum value of a voltage input to the integration circuit or smaller than the minimum value of the input voltage of the integration circuit. The switch switches the input voltage of the integration circuit between a voltage whose polarity is to be determined and a reference voltage. The time measurement circuit measures a time interval which it takes for the output voltage of the integration circuit to reach a set voltage, and based on the result of the measurement, determines the polarity of the input voltage of the integration circuit.

摘要翻译： 电压极性确定电路包括积分电路，开关和时间测量电路。 积分电路包括具有大于输入到积分电路的电压的最大值或小于积分电路的输入电压的最小值的输入偏移电压的运算放大器电路。 该开关将积分电路的输入电压切换到要确定其极性的电压与参考电压之间。 时间测量电路测量积分电路的输出电压达到设定电压所需的时间间隔，并且基于测量结果确定积分电路的输入电压的极性。

公开(公告)号：US20130086932A1

公开(公告)日：2013-04-11

申请号：US13703570

申请日：2011-05-27

申请人： Tetsuya Ishizeki ,  Atsuo Inoue ,  Masato Tsuboi ,  Kenichi Suzuki ,  Shinji Tagami

发明人： Tetsuya Ishizeki ,  Atsuo Inoue ,  Masato Tsuboi ,  Kenichi Suzuki ,  Shinji Tagami

IPC分类号： B60H1/32

CPC分类号： B60H1/3225 ,  B60H1/00585 ,  F25B49/005 ,  F25B2700/1931 ,  F25B2700/1933

摘要： In a vehicle air-conditioning device, refrigerant leakage is diagnosed precisely without any restrictions from an operating condition of the air-conditioning device. When the operating condition of the vehicle air-conditioning device is stable, a threshold value Th for determination of refrigerant leakage is set based on an outlet pressure Pd and an inlet pressure Ps of a compressor. Furthermore, a volume flow Gr in that refrigerant pipe running from a condenser to an expansion valve through which the refrigerant circulates in a liquid state is detected. When it is determined that the volume flow Gr exceeds the threshold value Th for determination of refrigerant leakage, a diagnosis result (alarm) indicating that the refrigerant leaks is output.

摘要翻译： 在车辆空调装置中，从空调装置的运转状态没有任何限制地精确地诊断制冷剂泄漏。 当车辆空调装置的运行状态稳定时，基于压缩机的出口压力Pd和入口压力Ps来设定用于确定制冷剂泄漏的阈值Th。 此外，检测从冷凝器流向制冷剂以液态循环的膨胀阀的制冷剂管的体积流量Gr。 当确定体积流量Gr超过用于确定制冷剂泄漏的阈值Th时，输出表示制冷剂泄漏的诊断结果（报警）。

公开(公告)号：US20120125025A1

公开(公告)日：2012-05-24

申请号：US13388032

申请日：2010-07-20

申请人： Tetsuya Ishizeki ,  Atsuo Inoue ,  Masato Tsuboi ,  Kenichi Suzuki

发明人： Tetsuya Ishizeki ,  Atsuo Inoue ,  Masato Tsuboi ,  Kenichi Suzuki

IPC分类号： F25B49/02 ,  F25B49/00

CPC分类号： F25B49/022 ,  F25B2341/0662 ,  F25B2500/19 ,  F25B2700/191

摘要： Provided is a refrigeration cycle wherein, when an orifice is disposed within a refrigeration circuit, and a differential pressure between the upstream side and the downstream side of the orifice is detected using two pressure sensors, the difference between the characteristics of the pressure sensors can be adequately and easily absorbed in software, to accurately determine an actual differential pressure, so that the flow rate of refrigerant and the torque of a compressor can be accurately estimated. The refrigeration cycle wherein the orifice is provided within a refrigerant circuit, and the pressure sensors are respectively provided on the upstream side and the downstream side of the orifice, is characterized in that, with regard to output characteristics representing the relationship between the detected pressure and the sensor output of each pressure sensor, the difference between the output characteristics of one pressure sensor and the output characteristics of the other pressure sensor is determined based on the outputs of both pressure sensors at a condition where the flow of refrigerant is stopped.

摘要翻译： 提供一种制冷循环，其中，当在冷冻回路内设置孔口时，使用两个压力传感器检测孔口的上游侧和下游侧之间的压差，压力传感器的特性之间的差可以是 充分和容易地被吸收在软件中，以准确地确定实际压差，使得可以准确地估计制冷剂的流量和压缩机的扭矩。 其中孔口设置在制冷剂回路内的制冷循环，压力传感器分别设置在孔口的上游侧和下游侧，其特征在于，关于输出特性，表示检测到的压力与 每个压力传感器的传感器输出，一个压力传感器的输出特性与另一个压力传感器的输出特性之间的差别基于在制冷剂流动停止的状态下的两个压力传感器的输出来确定。

公开(公告)号：US07339417B2

公开(公告)日：2008-03-04

申请号：US11896198

申请日：2007-08-30

申请人： Atsuo Inoue

发明人： Atsuo Inoue

IPC分类号： G05F1/10

CPC分类号： G05F3/205 ,  G05F3/242 ,  G05F3/262

摘要： According to the present invention, after a bias circuit (20) starts, a startup circuit (10) is isolated from the bias circuit (20) according to a bias voltage generated on an isolating voltage node (V2) from the bias circuit (20) to the startup circuit (10), and steady current consumption can be prevented in the startup circuit (10).

公开(公告)号：US07113547B2

公开(公告)日：2006-09-26

申请号：US10223346

申请日：2002-08-20

申请人： Atsuo Inoue ,  Shota Nakashima

发明人： Atsuo Inoue ,  Shota Nakashima

IPC分类号： H04L27/00

CPC分类号： H04L25/45

摘要： In a controller device, when a first transmitting signal is at a “L” level, a first operation voltage is high and the amplitude of signals CK and ICK is large, and on the contrary, the amplitude is small when the first transmitting signal is at a “H” level. In a data carrier device, the signals CK and ICK are subjected to full-wave rectification by a rectifier circuit so as to generate a second operation voltage, and a first receiving signal is extracted from the second operation voltage by a first signal detection circuit. On the other hand, in the data carrier device, when a second transmitting signal is at a “L” level, impedance between two contacts is small and the amplitude of the signals CK and ICK is small, and on the contrary, the amplitude is large when the second transmitting signal is at a “H” level. In the controller device, change of the amplitude of the signal ICK is extracted as a second receiving signal by a second signal detection circuit. Accordingly, supply of power and clock and two-way serial data communication can be simultaneously executed between the controller device and the data carrier device through merely two contacts.

公开(公告)号：US20060157722A1

公开(公告)日：2006-07-20

申请号：US11293358

申请日：2005-12-05

申请人： Hatsuo Takezawa ,  Shinichi Inagaki ,  Tetsuro Komatsu ,  Takeshi Miyakawa ,  Atsuo Inoue ,  Tsubasa Kusaka ,  Fujio Takahashi

发明人： Hatsuo Takezawa ,  Shinichi Inagaki ,  Tetsuro Komatsu ,  Takeshi Miyakawa ,  Atsuo Inoue ,  Tsubasa Kusaka ,  Fujio Takahashi

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/54 ,  H01L2224/16225 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/0401

摘要： Various semiconductor light emitting devices are described. In one aspect, the semiconductor light emitting device may include, an insulating substrate having an electrode pattern; a metal body provided on the insulating substrate, the metal body having a through-hole; an adhesive layer provided between the insulating substrate and the metal body; a semiconductor light emitting element provided in the through-hole of the metal body, provided on the insulating substrate and electrically connected to the electrode pattern; and a resin configured to seal the semiconductor light emitting, wherein an inner surface of the through-hole faces the semiconductor light emitting element. The inner surface may have a slanted surface and at least a part of the light emitted from the semiconductor light emitting element reflected by the inner surface.

摘要翻译： 描述各种半导体发光器件。 一方面，半导体发光器件可以包括具有电极图案的绝缘基板; 设置在所述绝缘基板上的金属体，所述金属体具有通孔; 设置在所述绝缘基板和所述金属体之间的粘合层; 设置在所述金属体的通孔中的半导体发光元件，设置在所述绝缘基板上并与所述电极图案电连接; 以及被配置为密封半导体发光的树脂，其中，所述通孔的内表面面对所述半导体发光元件。 内表面可以具有从内表面反射的从半导体发光元件发射的光的倾斜表面和至少一部分光。

公开(公告)号：US20060087367A1

公开(公告)日：2006-04-27

申请号：US11253613

申请日：2005-10-20

申请人： Atsuo Inoue

发明人： Atsuo Inoue

IPC分类号： G05F1/10

CPC分类号： G05F3/205 ,  G05F3/242 ,  G05F3/262

摘要： According to the present invention, after a bias circuit (20) starts, a startup circuit (10) is isolated from the bias circuit (20) according to a bias voltage generated on an isolating voltage node (V2) from the bias circuit (20) to the startup circuit (10), and steady current consumption can be prevented in the startup circuit (10).

摘要翻译： 根据本发明，在偏置电路（20）启动之后，根据在偏置电路（V 2）上产生的偏置电压，启动电路（10）与偏置电路（20）隔离（ 20）连接到启动电路（10），并且可以防止启动电路（10）中的稳定电流消耗。