LIGHTING DEVICE
    21.
    发明申请
    LIGHTING DEVICE 审中-公开
    照明设备

    公开(公告)号:US20100277083A1

    公开(公告)日:2010-11-04

    申请号:US12835149

    申请日:2010-07-13

    IPC分类号: H05B37/02

    摘要: According to one embodiment, a lighting device includes a device board, a rectification device connected to a commercial power supply, a series LED circuit, and a transistor (current limiter) which limits a maximum current flowing through the series LED circuit. The series circuit mounted on the device board is configured by connecting in series a plurality of LED elements. Each of the LED elements lights when an output voltage of the rectification device is applied to the series circuit. A number of LED elements included in the series circuit is set in a manner that a voltage applied to the series LED circuit is 70 to 90% of the output voltage of the rectification device.

    摘要翻译: 根据一个实施例,照明装置包括装置板,连接到商用电源的整流装置,串联LED电路和限制流过串联LED电路的最大电流的晶体管(限流器)。 安装在设备板上的串联电路通过串联连接多个LED元件而构成。 当整流装置的输出电压施加到串联电路时,每个LED元件点亮。 包括在串联电路中的多个LED元件被设置为施加到串联LED电路的电压是整流装置的输出电压的70至90%的方式。

    Method of polishing a silicon wafer
    28.
    发明授权
    Method of polishing a silicon wafer 有权
    抛光硅晶片的方法

    公开(公告)号:US08877643B2

    公开(公告)日:2014-11-04

    申请号:US13376259

    申请日:2010-05-28

    摘要: This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

    摘要翻译: 本发明提供一种抛光硅晶片的方法,其中可以获得与常规抛光方法相同的高平整度,并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生 以及抛光的硅晶片。 通过将含有磨粒的抛光溶液供给到抛光垫的表面上,然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法,其特征在于,研磨剂的数量 包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。

    METHOD OF POLISHING SILICON WAFER AS WELL AS SILICON WAFER
    29.
    发明申请
    METHOD OF POLISHING SILICON WAFER AS WELL AS SILICON WAFER 有权
    抛光硅波作为硅波的方法

    公开(公告)号:US20120080775A1

    公开(公告)日:2012-04-05

    申请号:US13376259

    申请日:2010-05-28

    IPC分类号: H01L21/306 H01L29/34

    摘要: This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer.The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

    摘要翻译: 本发明提供一种抛光硅晶片的方法,其中可以获得与常规抛光方法相同的高平整度,并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生 以及抛光的硅晶片。 通过将含有磨粒的抛光溶液供给到抛光垫的表面上,然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法,其特征在于,研磨剂的数量 包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。