公开(公告)号：US20130196505A1

公开(公告)日：2013-08-01

申请号：US13427343

申请日：2012-03-22

申请人： Toshio Hasegawa ,  Kunihiro Tada ,  Hideaki Yamasaki ,  David L. O'Meara ,  Gerrit J. Leusink

发明人： Toshio Hasegawa ,  Kunihiro Tada ,  Hideaki Yamasaki ,  David L. O'Meara ,  Gerrit J. Leusink

IPC分类号： H01L21/3205

CPC分类号： H01L21/76898 ,  C23C16/42 ,  C23C16/45538 ,  H01L21/28518 ,  H01L21/28562 ,  H01L28/91 ,  H01L29/66181

摘要： A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

摘要翻译： 提供了一种在衬底上形成金属硅化物层的方法。 根据一个实施例，该方法包括在处理室中提供衬底，将衬底在第一衬底温度下暴露于由包含金属前体的沉积气体产生的等离子体，其中等离子体暴露在衬底上形成保形的含金属层 在一个自限制的过程中。 该方法还包括在不存在等离子体的情况下将第二衬底温度下的含金属层暴露于还原气体，其中暴露步骤交替进行一次以形成金属硅化物层，并且沉积气体不含 还原气。 该方法提供了具有高纵横比的深沟槽中的保形金属硅化物形成。

公开(公告)号：US20080057344A1

公开(公告)日：2008-03-06

申请号：US10584642

申请日：2004-12-27

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： B32B33/00 ,  B05C11/10 ,  C23C16/34

CPC分类号： H01L21/76846 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/7687 ,  H01L2221/1078

摘要： Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.

摘要翻译： 公开了通过四氯化钛和氨的反应在基板上形成氮化钛膜的方法，同时使下层的腐蚀最小化。 通过在供给受限区域中使四氯化钛和氨彼此反应而在底物上形成第一氮化钛层，同时使下层的腐蚀最小化。 此后，在反应限制区域的第一氮化钛层上形成第二氮化钛层，同时实现良好的阶梯覆盖。

公开(公告)号：US20060105104A1

公开(公告)日：2006-05-18

申请号：US10514149

申请日：2003-05-16

申请人： Kunihiro Tada

发明人： Kunihiro Tada

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C23C16/5096

摘要： The present invention is a method of introducing a gas into a processing unit, the processing unit including a processing container and a showerhead part, the processing container having a processing space for conducting a predetermined process to an object to be processed, the showerhead part having a plurality of separated diffusion rooms into each of which a source gas or a reduction gas is supplied, each of the diffusion rooms diffusing and supplying the supplied gas into the processing space. The method includes: a selecting step of selecting a combination wherein a pressure difference between a pressure of a diffusion room into which the reduction gas is supplied and a pressure of a diffusion room into which the source gas is supplied is larger, from combinations of the source gas, the reduction gas and the plurality of diffusion rooms, and a supplying step of supplying the respective gases into the respective diffusion rooms based on the combination selected at the selecting step.

摘要翻译： 本发明是一种将气体引入处理单元的方法，处理单元包括处理容器和喷头部分，处理容器具有用于对待处理物体进行预定处理的处理空间，喷头部分具有 多个分离的扩散室，其中分别供应源气体或还原气体，每个扩散室将供应的气体扩散并供应到处理空间。 该方法包括：选择步骤，选择其中供给还原气体的扩散室的压力与供给源气体的扩散室的压力之间的压力差较大的组合， 源气体，还原气体和多个扩散室，以及基于在选择步骤中选择的组合，将各种气体供应到各个扩散室的供给步骤。

公开(公告)号：US6069093A

公开(公告)日：2000-05-30

申请号：US098731

申请日：1998-06-18

申请人： Kunihiro Tada ,  Satoshi Wakabayashi

发明人： Kunihiro Tada ,  Satoshi Wakabayashi

IPC分类号： C23C16/42 ,  C23C16/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L21/31

CPC分类号： H01L21/76855 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843

摘要： In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.

摘要翻译： 在形成金属膜的过程中，当在形成在硅半导体晶片上的电路元件的扩散层（电极等）上形成金属布线时，通过PECVD在加工体的表面上沉积Ti膜 使用TiCl4气体和H2气体作为原料气体。 通过向材料气体中添加N2气体，在扩散层表面上形成Ti-Si-N膜，随后在Ti-Si-N膜上形成Ti膜。 Ti-Si-N膜抑制硅从半导体晶片侧的扩散。

公开(公告)号：US6004872A

公开(公告)日：1999-12-21

申请号：US959845

申请日：1997-10-29

申请人： Yoshihiro Tezuka ,  Kunihiro Tada

发明人： Yoshihiro Tezuka ,  Kunihiro Tada

IPC分类号： C23C16/10 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L21/28052 ,  C23C16/10 ,  H01L21/28518 ,  H01L29/665

摘要： A method of manufacturing a semiconductor device, comprises the steps of, preparing a silicon substrate having a source region, a drain region, a gate electrode and an SiO.sub.2 film formed on one surface, depositing titanium on the one surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, so that the TiSi.sub.2 layer covers the source and drain regions and gate electrode, and a Ti layer covers the SiO.sub.2 film. The Ti layer formed on the SiO.sub.2 film is removed by a selective etching.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：制备具有在一个表面上形成的源极区，漏极区，栅电极和SiO 2膜的硅衬底，通过CVD在硅衬底的一个表面上沉积钛 使用低密度的高频等离子体形成具有C54结晶相的TiSi 2层，使得TiSi 2层覆盖源极和漏极区域和栅极电极，并且Ti层覆盖SiO 2膜。 通过选择性蚀刻除去形成在SiO 2膜上的Ti层。

公开(公告)号：US5709757A

公开(公告)日：1998-01-20

申请号：US518980

申请日：1995-08-24

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

IPC分类号： H01L21/302 ,  B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  B08B3/10

CPC分类号： H01L21/67028 ,  B08B7/00 ,  C23C16/4405 ,  Y10S438/905

摘要： A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.

摘要翻译： 具有干洗功能的成膜装置包括用于容纳待处理物体的处理室，将处理室内引入用于在物体上形成金属膜或金属化合物膜之一的处理气体的处理气体供给系统 用于将处理气体的成分沉积在物体上，从而形成膜的加热装置，用于将含有三氯化氮或氟化物如三氟化氯或三氟化氮的清洁气体引入处理室的清洁气体供给系统用于清洁 由于成膜而附着在处理室的内部的金属或金属化合物之一，以及用于将含有醇的清洁后处理气体引入处理室的后处理气体供给系统。

公开(公告)号：US08106335B2

公开(公告)日：2012-01-31

申请号：US11631485

申请日：2005-07-01

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： H05B3/68

CPC分类号： C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

摘要翻译： 处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。 其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。 嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器 相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。

公开(公告)号：US20100216304A1

公开(公告)日：2010-08-26

申请号：US12773641

申请日：2010-05-04

申请人： Kunihiro Tada ,  Kensaku Narushima ,  Satoshi Wakabayashi

发明人： Kunihiro Tada ,  Kensaku Narushima ,  Satoshi Wakabayashi

IPC分类号： H01L21/768

CPC分类号： H01L21/76846 ,  C23C16/0281 ,  C23C16/34 ,  H01J37/321 ,  H01L21/02063 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76814 ,  H01L21/76856 ,  Y10S438/905 ,  Y10S438/906 ,  Y10S438/974

摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.

摘要翻译： 在作为底层的硅化镍膜的表面上进行清洁处理。 然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。 然后，将Ti膜氮化。 然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。

公开(公告)号：US07737005B2

公开(公告)日：2010-06-15

申请号：US11547977

申请日：2005-04-08

申请人： Kunihiro Tada ,  Kensaku Narushima ,  Satoshi Wakabayashi

发明人： Kunihiro Tada ,  Kensaku Narushima ,  Satoshi Wakabayashi

IPC分类号： H01L21/322

CPC分类号： H01L21/76846 ,  C23C16/0281 ,  C23C16/34 ,  H01J37/321 ,  H01L21/02063 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76814 ,  H01L21/76856 ,  Y10S438/905 ,  Y10S438/906 ,  Y10S438/974

摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.

摘要翻译： 在作为底层的硅化镍膜的表面上进行清洁处理。 然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。 然后，将Ti膜氮化。 然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。

公开(公告)号：US20070131168A1

公开(公告)日：2007-06-14

申请号：US11588423

申请日：2006-10-27

申请人： Hisashi Gomi ,  Tetsuya Saito ,  Takashi Kakegawa ,  Takahisa Mase ,  Makoto Koizumi ,  Kunihiro Tada ,  Satoshi Wakabayashi ,  Kensaku Narushima ,  Fang Cheng

发明人： Hisashi Gomi ,  Tetsuya Saito ,  Takashi Kakegawa ,  Takahisa Mase ,  Makoto Koizumi ,  Kunihiro Tada ,  Satoshi Wakabayashi ,  Kensaku Narushima ,  Fang Cheng

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/3244 ,  H01J37/32449

摘要： The invention relates to a gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate. The gas supplying unit includes a plurality of nickel members. A large number of gas-supplying holes is formed at a lower surface of the gas supplying unit, a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

摘要翻译： 本发明涉及一种气体供应单元，其被设置成气密地装配在形成在处理容器的顶部的开口中，用于对基板进行处理。 气体供给单元包括多个镍构件。 在气体供给单元的下表面形成有大量的供气孔，处理气体适于从多个供气孔供给到处理容器中，并且多个镍构件被固定 通过用于防止由不同于镍的材料制成的粘着的中间构件。