公开(公告)号：US20050109628A1

公开(公告)日：2005-05-26

申请号：US10975154

申请日：2004-10-28

申请人： Gregory Wilson ,  Paul McHugh ,  Kyle Hanson

发明人： Gregory Wilson ,  Paul McHugh ,  Kyle Hanson

IPC分类号： C25D7/12 ,  B05C3/00 ,  B05C3/20 ,  B23H3/00 ,  C02F20060101 ,  C25B9/00 ,  C25C7/00 ,  C25D3/02 ,  C25D5/00 ,  C25D5/04 ,  C25D5/08 ,  C25D7/00 ,  C25D11/32 ,  C25D17/00 ,  C25D17/02 ,  C25D17/12 ,  C25D21/00

CPC分类号： C25D17/02 ,  C25D5/08 ,  C25D17/001 ,  Y10S204/07

摘要： A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

摘要翻译： 阐述了用于电化学处理微电子工件的至少一个表面的反应器。 反应器包括反应器头，其包括工件支撑件，该工件支撑件具有一个或多个电触头，其定位成与微电子工件电接触。 反应器还包括处理容器，该处理容器具有多个喷嘴，其角度地设置在主流体流动室的侧壁中，主电解槽内的主流体流动室内的电化学处理期间通常包含在其中的处理流体槽的表面之下。 多个阳极设置在主流体流动室中的不同高度处，以便将它们放置在与正在处理的微电子工件不同的距离处，而在多个阳极和正在处理的微电子工件之间没有中间扩散器。 多个阳极中的一个或多个可以紧邻正在处理的工件。 此外，多个阳极中的一个或多个可以是虚拟阳极。 本发明还涉及主流体流动室内的多级阳极配置及其使用方法。

公开(公告)号：US20070151844A1

公开(公告)日：2007-07-05

申请号：US11603940

申请日：2006-11-22

申请人： Gregory Wilson ,  Paul McHugh ,  Daniel Woodruff

发明人： Gregory Wilson ,  Paul McHugh ,  Daniel Woodruff

IPC分类号： C25B9/04

CPC分类号： C25D17/00 ,  C25D5/08 ,  C25D5/18 ,  C25D17/001 ,  C25D17/08 ,  C25D17/10

摘要： Reactors with agitators and methods for processing microfeature workpieces with such reactors. The agitators are capable of obtaining high, controlled mass-transfer rates that result in high quality surfaces and efficient wet chemical processes. The agitators generate high flow velocities in the fluid and contain the high energy fluid proximate to the surface of the workpiece to form high quality surfaces when cleaning, etching and/or depositing materials to/from a workpiece. The agitators also have short stroke lengths so that the footprints of the reactors are relatively small. As a result, the reactors are efficient and cost effective to operate. The agitators are also designed so that electrical fields in the processing solution can effectively operate at the surface of the workpiece.

摘要翻译： 具有搅拌器的反应器和用这种反应器处理微型工件的方法。 搅拌器能够获得高质量的质量传递速率，从而产生高品质的表面和有效的湿化学工艺。 搅拌器在流体中产生高流速并且在工件表面附近容纳高能量流体，以便当清洁，蚀刻和/或从工件沉积材料时形成高质量的表面。 搅拌器还具有短行程长度，使得反应器的足迹相对较小。 因此，反应堆的运行效率高，成本低。 搅拌器也被设计成使得处理溶液中的电场能够在工件的表面上有效地操作。

公开(公告)号：US20070034516A1

公开(公告)日：2007-02-15

申请号：US11392477

申请日：2006-03-28

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： G05B19/41875 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  G05B2219/32182 ,  G05B2219/32216 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/265

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设施最初根据处理室的数值或从操作实际处理室得到的实验数据来配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数值模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

公开(公告)号：US20050245083A1

公开(公告)日：2005-11-03

申请号：US11053050

申请日：2005-02-07

申请人： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  C25D17/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US20050167273A1

公开(公告)日：2005-08-04

申请号：US11096972

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： B23H3/02 ,  C25B9/00 ,  C25C3/16 ,  C25C3/20 ,  C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D21/12 ,  C25F7/00 ,  G06F19/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US20070089991A1

公开(公告)日：2007-04-26

申请号：US11639733

申请日：2006-12-14

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。 在一些实施例中，设备分析施加到工件的种子层的轮廓，并且确定并传送材料沉积工具一组控制参数，这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。

公开(公告)号：US20050189227A1

公开(公告)日：2005-09-01

申请号：US11097671

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： B23H3/02 ,  C25B9/00 ,  C25C3/16 ,  C25C3/20 ,  C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D21/12 ,  C25F7/00 ,  G06F19/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US20050006241A1

公开(公告)日：2005-01-13

申请号：US10734098

申请日：2003-12-11

申请人： Paul McHugh ,  Gregory Wilson ,  Daniel Woodruff ,  Nolan Zimmerman ,  James Erickson

发明人： Paul McHugh ,  Gregory Wilson ,  Daniel Woodruff ,  Nolan Zimmerman ,  James Erickson

IPC分类号： C25D5/00

CPC分类号： C25D5/006 ,  C25D5/08 ,  C25D17/001 ,  C25D17/008 ,  C25D17/10 ,  C25D17/12 ,  C25D21/10 ,  C25D21/12 ,  H01L21/6723

摘要： Paddles and enclosures for processing microfeature workpieces are disclosed. A paddle device having multiple paddles is positioned in an enclosure to reciprocate back and forth along a generally linear path. The clearances between the paddles, the workpiece and the walls of the chamber are relatively small to increase the flow agitation at the surface of the workpiece and enhance the mass transfer process occurring there. The paddles are shaped to reduce or eliminate electrical shadowing effects created at the surface of the workpiece during electrochemical processing. Paddles on the same paddle device may have different shapes to reduce the likelihood for creating three-dimensional effects in the flow field proximate to the surface of the workpiece. The reciprocation stroke of the paddles may shift to further reduce shadowing.

摘要翻译： 公开了用于处理微特征工件的鞍座和外壳。 具有多个桨叶的桨装置定位在外壳中，沿着大致线性的路径往复运动。 桨叶，工件和室壁之间的间隙相对较小，以增加工件表面的流动搅拌并增强在那里发生的传质过程。 桨叶的形状可减少或消除在电化学处理期间在工件表面产生的电阴影效应。 相同桨装置上的桨叶可以具有不同的形状，以减少在靠近工件表面的流场中产生三维效应的可能性。 桨叶的往复行程可能会转移以进一步减少阴影。

公开(公告)号：US20050178667A1

公开(公告)日：2005-08-18

申请号：US11033783

申请日：2005-01-12

申请人： Gregory Wilson ,  Kenneth Gibbons ,  Paul McHugh

发明人： Gregory Wilson ,  Kenneth Gibbons ,  Paul McHugh

IPC分类号： C25D5/18 ,  C25D7/12 ,  C25D17/10 ,  C25D11/02 ,  C25D5/22 ,  H01L21/288

CPC分类号： C25D17/001 ,  C25D5/18 ,  C25D7/123 ,  C25D17/008 ,  C25D17/10

摘要： A method and system for electrolytically processing a microelectronic workpiece. In one embodiment, the method includes contacting the workpiece with an electrolytic fluid, positioning one or more electrodes in electrical communication with the workpiece, directing an electrical current through the electrolytic fluid from the electrodes to the workpiece or vice versa, and actively changing a distribution of the current at the workpiece during the process. For example, the current can be changed such that a current ratio of at least one electrical current to the sum of the electrical currents shifts from a first current ratio value to a second current ratio value. Accordingly, the current applied to the workpiece can be adjusted to achieve a target shape for a conductive layer on the workpiece, or to account for temporally and/or spatially varying characteristics of the electrolytic process.

摘要翻译： 一种电解处理微电子工件的方法和系统。 在一个实施例中，该方法包括使工件与电解液接触，将一个或多个电极定位成与工件电连通，将电流从电极引导到工件，反之亦然，并主动改变分布 在工艺过程中的工件电流。 例如，可以改变电流，使得至少一个电流的电流比与电流的和从第一电流比值转换到第二电流比值。 因此，可以调节施加到工件上的电流，以达到工件上的导电层的目标形状，或者说明电解过程的时间和/或空间变化的特性。

公开(公告)号：US20070221502A1

公开(公告)日：2007-09-27

申请号：US11739553

申请日：2007-04-24

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： G05B19/41875 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  G05B2219/32182 ,  G05B2219/32216 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/265

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设施最初根据处理室的数值或从操作实际处理室得到的实验数据来配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数值模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。