Optical grating coupler
    21.
    发明授权

    公开(公告)号:US07146074B2

    公开(公告)日:2006-12-05

    申请号:US10867949

    申请日:2004-06-14

    IPC分类号: G02B6/34

    CPC分类号: G02B6/124 G02B6/42

    摘要: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    Optical grating coupler
    22.
    发明授权

    公开(公告)号:US07065271B2

    公开(公告)日:2006-06-20

    申请号:US10280159

    申请日:2002-10-25

    IPC分类号: G02B6/34

    CPC分类号: G02B6/124 G02B6/42

    摘要: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.

    Silicon solar cell with germanium backside solar cell
    23.
    发明授权
    Silicon solar cell with germanium backside solar cell 失效
    硅太阳能电池与锗背面太阳能电池

    公开(公告)号:US06743974B2

    公开(公告)日:2004-06-01

    申请号:US10140640

    申请日:2002-05-08

    IPC分类号: H01L3106

    摘要: A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell comprises a p++ type silicon layer; an intrinsic silicon layer formed on the p++ type silicon layer; an n++ type silicon layer formed on the intrinsic type silicon layer; and a p-type silicon layer formed on the n++ type silicon layer. The germanium solar cell preferably comprises an n-type germanium layer; and a p-type germanium layer form on the n-type germanium layer. The p-type germanium layer is coupled to the p++ type silicon layer.

    摘要翻译: 一种多结太阳能电池,包括形成在硅太阳能电池的背面上的锗太阳能电池的硅太阳能电池。 硅太阳能电池和锗太阳能电池通过p-p接头直接耦合以钝化界面位错。 优选地,硅太阳能电池包括p ++型硅层; 形成在p ++型硅层上的本征硅层; 形成在本征型硅层上的n ++型硅层; 以及形成在n ++型硅层上的p型硅层。 锗太阳能电池优选包括n型锗层; 和在n型锗层上形成p型锗层。 p型锗层与p ++型硅层耦合。

    Mode transformer between low index difference waveguide and high index difference waveguide
    24.
    发明授权
    Mode transformer between low index difference waveguide and high index difference waveguide 失效
    低折射率差分波导与高折射率差分波导之间的模式变换器

    公开(公告)号:US06697551B2

    公开(公告)日:2004-02-24

    申请号:US09978310

    申请日:2001-06-26

    IPC分类号: G02B626

    摘要: A mode transformer that enables low-loss coupling between optical modes of two waveguides with different index difference. The mode size and the effective index are gradually changed between two waveguides to gradually transform the mode shape, size, and speed with minimum power loss. The mode transformer is useful for coupling the mode of an optical fiber waveguide with low index difference to the mode of a planar high index difference waveguide, and vice versa.

    摘要翻译: 一种模式变压器,可实现具有不同折射率差的两个波导的光模式之间的低损耗耦合。 模式尺寸和有效指数在两个波导之间逐渐变化,以最小功率损耗逐渐转换模式形状,尺寸和速度。 模式变压器可用于将具有低折射率差的光纤波导的模式耦合到平面高折射率差分波导的模式,反之亦然。

    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES
    27.
    发明申请
    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES 有权
    在激光和发光器件中的工程辐射波长

    公开(公告)号:US20110316018A1

    公开(公告)日:2011-12-29

    申请号:US12821643

    申请日:2010-06-23

    IPC分类号: H01L33/02 H01L33/00

    摘要: A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译: 提供一种发光器件,其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Microphotonic waveguide including core/cladding interface layer
    28.
    发明授权
    Microphotonic waveguide including core/cladding interface layer 有权
    微波导管包括芯/包层界面层

    公开(公告)号:US07831123B2

    公开(公告)日:2010-11-09

    申请号:US11899234

    申请日:2007-09-05

    IPC分类号: G02B6/10

    摘要: The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.

    摘要翻译: 本发明提供一种具有波导芯的波导,波导芯具有纵向侧壁表面,纵向顶表面和设置在基底上的纵向底表面。 界面层设置在波导芯的至少一个纵向侧壁表面上。 至少在波导芯侧壁和顶表面上,在界面层上设置波导覆层。 本发明的波导可以通过在基板上形成波导管下封层,然后在下封层上形成波导芯来制造。 然后在波导芯的至少纵向侧壁表面上形成界面层,并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。

    Energy coupled superlattice structures for silicon based lasers and modulators
    29.
    发明授权
    Energy coupled superlattice structures for silicon based lasers and modulators 有权
    用于硅基激光器和调制器的能量耦合超晶格结构

    公开(公告)号:US07738756B2

    公开(公告)日:2010-06-15

    申请号:US11490961

    申请日:2006-07-21

    IPC分类号: G02B6/10

    摘要: A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.

    摘要翻译: 波导结构包括SOI衬底。 在包括多个具有富Si氧化物(SRO),富Si的氮化物(SRN)或富Si氧氮化物(SRON)的交替或非周期分布的薄层的多层的SOI衬底上形成芯结构。 多层掺杂有稀土材料,以将波导结构的发射范围扩展到近红外区域。 低折射率包层包括用作电极的导电氧化物。

    Photodiode
    30.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号:US07659627B2

    公开(公告)日:2010-02-09

    申请号:US11950795

    申请日:2007-12-05

    IPC分类号: H01L29/41

    摘要: A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.

    摘要翻译: 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底,形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指,并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里,不透明电极的宽度被设定为小于透明电极的宽度。