公开(公告)号：US08298628B2

公开(公告)日：2012-10-30

申请号：US12476734

申请日：2009-06-02

Applicant: Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

Inventor： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC: C23C16/00 ,  H05H1/24

CPC classification number: H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract translation: 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20110150389A1

公开(公告)日：2011-06-23

申请号：US12643922

申请日：2009-12-21

Applicant: Qianggao Hu ,  Liping Sun ,  Liu Yang ,  Zhilin Yuan ,  Hui Xie ,  Rui Yang

Inventor： Qianggao Hu ,  Liping Sun ,  Liu Yang ,  Zhilin Yuan ,  Hui Xie ,  Rui Yang

IPC: G02B6/26

CPC classification number: G02B6/29395 ,  G02B6/3594

Abstract: A wavelength selective switch (WSS) with hitless switching. The WSS includes the fiber collimator array, the focusing lens, collimating lens, diffraction grating, focusing lens, and attenuation reflection unit array. Each attenuation reflection unit has an interconnected transmission-type MEMS attenuator and a one-dimension MEMS reflector. The transmission-type MEMS attenuator is positioned in the front of the one-dimension MEMS reflector. The central axis of the transmission-type MEMS attenuator aligns and coincides with that of the one-dimension MEMS reflector, with the two central axes being glued together. The WSS of the present invention effectively utilizes the combination of a one-dimension reflector array and a transmission-type optical attenuator chip. With the use of one-dimension reflector array, instead of the known two-dimension reflector array, the complexity of design and manufacture is greatly reduced, thereby reducing the production costs of the switch.

Abstract translation: 具有无间断切换的波长选择开关（WSS）。 WSS包括光纤准直器阵列，聚焦透镜，准直透镜，衍射光栅，聚焦透镜和衰减反射单元阵列。 每个衰减反射单元具有互连的透射型MEMS衰减器和一维MEMS反射器。 传输型MEMS衰减器位于一维MEMS反射器的前面。 传输型MEMS衰减器的中心轴与一维MEMS反射器的中心轴对准并重合，两个中心轴被粘合在一起。 本发明的WSS有效地利用了一维反射器阵列和透射型光衰减器芯片的组合。 使用一维反射器阵列，而不是已知的二维反射器阵列，大大降低了设计和制造的复杂性，从而降低了开关的生产成本。

公开(公告)号：US07960205B2

公开(公告)日：2011-06-14

申请号：US12272886

申请日：2008-11-18

Applicant: Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

Inventor： Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

IPC: H01L21/00

CPC classification number: C23C16/45531 ,  C23C16/305 ,  C23C16/45527 ,  C23C16/45553

Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

Abstract translation: 本发明是使用选自原子层沉积和化学气相沉积的方法制造锗 - 锑 - 碲合金膜的方法，其中甲硅烷基碲前驱物被用作合金膜的碲源，并且是 在沉积过程中与醇反应。

公开(公告)号：US20110078162A1

公开(公告)日：2011-03-31

申请号：US12570023

申请日：2009-09-30

Applicant: Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

Inventor： Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

IPC: G06F17/30

CPC classification number: G06F17/30867

Abstract: Described is a summarizing a web entity (e.g., a person, place, product or so forth) based upon the entity's appearance in web documents (e.g., on the order of hundreds of millions or billions of webpages). Webpages are separated into blocks, which are then processed according to various features to filter the number of blocks to further process, and rank the most relevant blocks with respect to the entity that remain. A redundancy removal mechanism removes redundant blocks, leaving a set of remaining blocks that are used to provide a summary of information that is relevant to the entity.

Abstract translation: 描述了基于实体在web文档中的出现（例如，数亿或数十亿个网页的数量级）来汇总web实体（例如，人，地点，产品等）。 网页被分成块，然后根据各种特征来处理块以过滤块的数量以进一步处理，并且相对于保留的实体排列最相关的块。 冗余删除机制去除冗余块，留下一组用于提供与该实体相关的信息摘要的剩余块。

公开(公告)号：US06449132B1

公开(公告)日：2002-09-10

申请号：US09522517

申请日：2000-03-10

Applicant: Liu Yang ,  Jumna Ramdular ,  Sara L. Gordon ,  Ralph D. Knox ,  John E. Dzarnoski

Inventor： Liu Yang ,  Jumna Ramdular ,  Sara L. Gordon ,  Ralph D. Knox ,  John E. Dzarnoski

IPC: G11B539

CPC classification number: G11B5/3903 ,  G11B5/3109

Abstract: A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.

Abstract translation: 根据本发明的用于MR磁头的氮化硅电介质膜包含约38％至44体积％的Si，约35％至37体积％的N和约21％至24％的 电介质膜通过等离子体增强化学气相沉积（PECVD）在较低温度下形成。 将能够反应形成氮化硅的多种气体引入PECVD反应器。 在反应器中产生电场以产生等离子体。 反应器中的气体在存在电场的情况下反应形成氮化硅电介质膜。

公开(公告)号：US09696052B2

公开(公告)日：2017-07-04

申请号：US13179770

申请日：2011-07-11

Applicant: Mark Malchiondo ,  Liu Yang

Inventor： Mark Malchiondo ,  Liu Yang

IPC: F24F11/04 ,  G05D22/00 ,  G05D22/02 ,  F24F3/14 ,  F24F11/00

CPC classification number: F24F11/0012 ,  F24F11/30 ,  F24F11/56 ,  F24F11/58 ,  F24F11/64 ,  F24F11/74 ,  F24F2110/10 ,  F24F2110/20 ,  F24F2130/00 ,  F24F2130/10

Abstract: A controller is provided for HVAC equipment. The controller receives a set of internal temperature values, and a set of external temperature values, the set of external temperature values representing at least one non-current temperature. The controller determines a predictive internal temperature value from the set of internal temperature values and a predictive external temperature value from the set of external temperature values. The controller receives an internal humidity value representing humidity within the premise, the controller further controls the HVAC equipment to modify the humidity within the premise when the received internal humidity value is different from a humidity set point; and the humidity set point is regulated by a humidity limit value, the humidity limit value being where condensation forms, the humidity limit value being calculated using the predictive internal temperature value and the predictive external temperature value.

公开(公告)号：US08229960B2

公开(公告)日：2012-07-24

申请号：US12570023

申请日：2009-09-30

Applicant: Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

Inventor： Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

IPC: G06F17/00

CPC classification number: G06F17/30867

Abstract: Described is a summarizing a web entity (e.g., a person, place, product or so forth) based upon the entity's appearance in web documents (e.g., on the order of hundreds of millions or billions of webpages). Webpages are separated into blocks, which are then processed according to various features to filter the number of blocks to further process, and rank the most relevant blocks with respect to the entity that remain. A redundancy removal mechanism removes redundant blocks, leaving a set of remaining blocks that are used to provide a summary of information that is relevant to the entity.

Abstract translation: 描述了基于实体在web文档中的出现（例如，数亿或数十亿个网页的数量级）来汇总web实体（例如，人，地点，产品等）。 网页被分成块，然后根据各种特征来处理块以过滤块的数量以进一步处理，并且相对于保留的实体排列最相关的块。 冗余删除机制去除冗余块，留下一组用于提供与该实体相关的信息摘要的剩余块。

公开(公告)号：US20120171378A1

公开(公告)日：2012-07-05

申请号：US13156501

申请日：2011-06-09

Applicant: Manchao Xiao ,  Xinjian Lei ,  Liu Yang

Inventor： Manchao Xiao ,  Xinjian Lei ,  Liu Yang

IPC: C23C16/30 ,  B05D3/10

CPC classification number: C23C16/305 ,  C23C16/45553

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本发明公开了使用化学气相沉积（CVD）工艺，原子层沉积（ALD）工艺或湿法工艺的金属硫族化合物的合成。 有机甲硅烷基碲或有机甲硅烷基硒与一系列具有亲核取代基的金属化合物的配体交换反应产生金属硫族化物。 该化学物质用于沉积锗 - 锑碲（GeSbTe）和锗 - 锑 - 硒（GeSbSe）膜或其他碲和硒基金属化合物用于相变记忆和光伏器件。

公开(公告)号：US08193027B2

公开(公告)日：2012-06-05

申请号：US13023145

申请日：2011-02-08

Applicant: Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

Inventor： Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

IPC: H01L21/00 ,  H01L21/06 ,  H01L21/44 ,  H01L21/469

CPC classification number: H01L21/06 ,  C23C18/1204 ,  C23C18/1225 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0322 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1608 ,  Y02E10/541

Abstract: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中，本文所述的方法和组合物用于沉积锗碲（GeTe），锑碲（SbTe），锑锗（SbGe），锗锑碲（GST），铟锑碲（IST），银铟锑碲 （AIST），碲化镉（CdTe），硒化镉（CdSe），碲化锌（ZnTe），硒化锌（ZnSe），铜铟镓硒（CIGS）膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。

公开(公告)号：US20110017201A1

公开(公告)日：2011-01-27

申请号：US12460861

申请日：2009-07-27

Applicant: Liu Yang

Inventor： Liu Yang

IPC: F24J2/42

CPC classification number: A61K38/1709 ,  A61K9/127 ,  A61N5/06 ,  A61N5/10 ,  A61N2005/0661 ,  F24D17/0068 ,  F24D19/1057 ,  F24D2200/14 ,  Y02B10/20 ,  Y02B10/22 ,  Y02B10/70

Abstract: The objective of this invention is to make solar water heating affordable and compatible with conventional gas or electric water heaters. Solar energy is clean and renewable. However, solar water heating has not been in wide use in the US mainly due to two reasons: first, the cost of a current solar water heater is generally too expensive for an average household; second, a typical solar water heater uses ethylene glycerol as a heat transfer fluid to prevent freezing and needs additional space for an extra exchange tank. Our design includes evacuated tube collector panels for efficient collection of solar energy, utilizes two unique three-way adaptors to connect solar collector panels to a conventional water heater for storing solar hot water, and is operational even in freezing temperature. These improvements eliminate the need for an extra exchange tank and significantly reduce the cost of a solar water heater.

Abstract translation: 本发明的目的是使太阳能热水采用经济实惠且与常规气体或电热水器兼容。 太阳能是干净可再生的。 然而，太阳能热水供应在美国还没有得到广泛的应用，主要是由于两个原因：一是目前太阳能热水器的成本一般来说太平常， 第二，典型的太阳能热水器使用乙烯甘油作为传热流体来防止冻结，并需要额外的空间用于额外的交换罐。 我们的设计包括用于高效收集太阳能的真空管收集器面板，利用两个独特的三向适配器将太阳能集热板连接到常规的热水器，用于存储太阳能热水，即使在冷冻温度下也可运行。 这些改进消除了对额外的交换罐的需要，并大大降低了太阳能热水器的成本。