Abstract:
An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.
Abstract:
An opto-mechanical coupler and corresponding method are provided. The coupler may include a first end and a second end configured to receive optical fibers and a top surface and bottomed surface defining a through hole extending between the top and bottom surfaces. The coupler may include a reflective surface that redirects the optical signals between a first direction and a second direction substantially perpendicular to the first direction. The coupler may position one or more optical fibers along a second direction such that an optical signal from the plurality of optoelectronic transceivers is directed into one or more optical fibers or an optical signal from the one or more optical fibers is directed into a plurality of the optoelectronic transceivers, with the coupler accommodating different diameters of optical fiber including POF, SMF, and/or MMF fiber.
Abstract:
An apparatus includes a Silicon Photonics (SiP) device and a ferrule. The SiP includes multiple optical waveguides. The ferrule includes multiple optical fibers for exchanging optical signals with the respective optical waveguides of the SiP device. In some embodiments, an array of micro-lenses is configured to couple the optical signals between the optical waveguides of the SiP device and the respective optical fibers of the ferrule. In some embodiments, a polymer layer is placed between the SiP device and the ferrule, and includes multiple polymer-based Spot-Size Converters (SSCs) that are configured to couple the optical signals between the optical waveguides of the SiP device and the respective optical fibers of the ferrule.
Abstract:
A layout for a vertical-cavity surface-emitting laser (VCSEL) is provided. In an example embodiment, the layout comprises a VCSEL, an etched shape around a mesa of the VCSEL, a signal contact layer deposited on section of the mesa, and a ground contact layer. The ground contact layer comprises three parts and is positioned around a first section of the etched shape. The first part of the ground contact layer is deposited on a second section of the etched shape. The second and third parts of the ground contact layer comprise two legs off of the first part. The two legs are symmetrically positioned about two sides of the signal contact layer to form a ground-signal-ground configuration.
Abstract:
A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
Abstract:
An method for characterizing a modulator for fabricating a silicon photonics circuit and an apparatus (e.g., a silicon photonics wafer) made via the method are described. The method includes determining an absorption spectrum of a modulator and determining, based at least on the determined absorption spectrum, an operational bandwidth of the modulator. The method further includes selecting a laser for coupling with the modulator using the operational bandwidth of the modulator. In this way, the laser is selected such that it has an emission bandwidth that corresponds to the operational bandwidth of the modulator.
Abstract:
An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.
Abstract:
A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
Abstract:
An opto-mechanical coupler and corresponding method are provided. The coupler may include a first end and a second end configured to receive optical fibers and a top surface and bottomed surface defining a through hole extending between the top and bottom surfaces. The coupler may include a reflective surface that redirects the optical signals between a first direction and a second direction substantially perpendicular to the first direction. The coupler may position one or more optical fibers along a second direction such that an optical signal from the plurality of optoelectronic transceivers is directed into one or more optical fibers or an optical signal from the one or more optical fibers is directed into a plurality of the optoelectronic transceivers, with the coupler accommodating different diameters of optical fiber including POF, SMF, and/or MMF fiber.
Abstract:
A optical assembly and a method of reducing interference using the same may be provided. The optical assembly may include an optical cable and an optical transceiver module. The optical transceiver module may include a socket configured to receive the optical cable, an electro-optical transducer configured to generate an optical signal, and an optical lantern. The optical lantern may include an optical prism that may receive the optical signal via a first surface, disperse the optical signal into a plurality of modes of the optical signal, and output the plurality of modes via a second surface. A mirror may reflect the optical signal from a first direction extending between the first surface and the mirror to a second direction extending between the mirror and the second surface. The optical lantern may direct at least one of the plurality of modes of the optical signal into the optical cable.