公开(公告)号：US12250812B2

公开(公告)日：2025-03-11

申请号：US18094906

申请日：2023-01-09

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Nancy M. Lomeli ,  John D. Hopkins ,  Jiewei Chen ,  Indra V. Chary ,  Jun Fang ,  Vladimir Samara ,  Kaiming Luo ,  Rita J. Klein ,  Xiao Li ,  Vinayak Shamanna

IPC: H01L21/306 ,  G11C5/02 ,  G11C5/06 ,  G11C16/04 ,  H10B41/27 ,  H10B43/27 ,  H10B43/30

Abstract: Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20250006324A1

公开(公告)日：2025-01-02

申请号：US18883624

申请日：2024-09-12

Applicant: Micron Technology, Inc.

Inventor： Libo Wang ,  Xiao Li ,  Bethany M. Grentz ,  Sumana Adusumilli ,  Carla L. Christensen

IPC: G16H10/60 ,  G01W1/10 ,  G16H20/70

Abstract: Systems for weather sensing and forecasting, and associated devices and methods, are disclosed herein. In some embodiments, a system for predicting a subject's perception of weather conditions is provided. The system can generate an individual profile for the subject, the individual profile including health information of the subject. The system can receive weather data including a first weather condition for a target location. The system can compare the individual profile to a plurality of different user profiles to identify one or more similar user profiles. Each similar user profile can (1) be associated with a user having similar health information as the subject, and (2) include weather perception data indicating how the user perceived a set of second weather conditions. Based on the weather data and the similar user profile(s), the system can generate a prediction of the how the subject will perceive the first weather condition.

公开(公告)号：US11978705B2

公开(公告)日：2024-05-07

申请号：US17643061

申请日：2021-12-07

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Lifang Xu ,  Xiao Li ,  Jivaan Kishore Jhothiraman ,  Mohadeseh Asadolahi Baboli

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/5283 ,  H10B41/27 ,  H10B43/27

Abstract: A microelectronic device having a stack structure with an alternating sequence of conductive material and insulative material arranged in tiers, and having blocks separated by dielectric slot structures. Each of the blocks has a stadium structure, a filled trench overlying the stadium structure, support structures extending through the filled trench and tiers of the stack structure, and dielectric liner structures covering sidewalls of the support structures. The stadium structure has staircase structures each having steps with edges of the tiers of the stack structure. The filled trench has a dielectric material interposed between at least two additional dielectric materials. The dielectric liner structures have first protrusions at vertical positions of the dielectric material, and second protrusions at vertical positions of the conductive material of the tiers of the stack structure. The second protrusions have greater horizontal dimensions that the first protrusions. Memory devices, electronic systems, and methods are also described.

公开(公告)号：US20240071919A1

公开(公告)日：2024-02-29

申请号：US17823472

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Mohad Baboli ,  Yiping Wang ,  Xiao Li ,  Lifang Xu ,  John M. Meldrim ,  Jivaan Kishore Jhothiraman ,  Shuangqiang Luo

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76822 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76895 ,  H01L23/535

Abstract: A microelectronic device includes a stack structure comprising blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. At least one of the blocks comprising a stadium structure comprising opposing staircase structures each having steps comprising edges of the tiers; and a filled trench vertically overlying and within horizontal boundaries of the stadium structure of the at least one of the blocks. The filled trench includes a dielectric liner material on the opposing staircase structures of the stadium structure and on inner sidewalls of the two bridge regions and at least one dielectric structure doped with one or more of carbon and boron on the dielectric liner material, the at least one dielectric structure horizontally overlapping the steps of the stadium structure.

公开(公告)号：US11904895B2

公开(公告)日：2024-02-20

申请号：US17109501

申请日：2020-12-02

Applicant: Micron Technology, Inc.

Inventor： Amy Rae Griffin ,  Xiao Li ,  Maria Pat F. Chavarria ,  Alpha Chavez Labiano

IPC: B60W60/00 ,  B60W30/14 ,  B60W30/16

CPC classification number: B60W60/0016 ,  B60W30/143 ,  B60W30/16 ,  B60W2556/45

Abstract: Systems, methods, and apparatus related to cruise control for a vehicle. In one approach, speed for a first vehicle is controlled in a first mode using data from sensors. The speed is controlled while keeping at least a minimum distance from a second vehicle being followed by the first vehicle. In response to determining that data from the sensors is not usable to control the first vehicle (e.g., the data cannot be used to measure the minimum distance), the first vehicle changes from the first mode to a second mode. In the second mode, the first vehicle maintains a constant speed and/or obtains additional data from sensors and/or computing devices located externally to the first vehicle. In another approach, the additional data can additionally or alternatively be obtained from a mobile device of a passenger of the first vehicle. The additional data is used to maintain a safe minimum distance from the second vehicle.

公开(公告)号：US11715685B2

公开(公告)日：2023-08-01

申请号：US17064453

申请日：2020-10-06

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Nancy M. Lomeli ,  Xiao Li

IPC: H01L23/522 ,  G11C16/08 ,  G11C16/24 ,  H01L21/768 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40

CPC classification number: H01L23/5226 ,  G11C16/08 ,  G11C16/24 ,  H01L21/76831 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40

Abstract: A method of forming a microelectronic device includes forming a microelectronic device structure. The microelectronic device structure includes a stack structure comprising insulative structures and electrically conductive structures vertically alternating with the insulative structures, pillar structures extending vertically through the stack structure, an etch stop material vertically overlaying the stack structure, and a first dielectric material vertically overlying the etch stop material. The method further includes removing portions of the first dielectric material, the etch stop material, and an upper region of the stack structure to form a trench interposed between horizontally neighboring groups of the pillar structures, forming a liner material within the trench, and substantially filling a remaining portion of the trench with a second dielectric material to form a dielectric barrier structure.

公开(公告)号：US11646286B2

公开(公告)日：2023-05-09

申请号：US16719643

申请日：2019-12-18

Applicant: Micron Technology, Inc.

Inventor： Shams U. Arifeen ,  Christopher Glancey ,  Koustav Sinha ,  Xiao Li

IPC: H01L23/00

CPC classification number: H01L24/16 ,  H01L24/11 ,  H01L2224/11462 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147

Abstract: Solder joints comprising two different solder materials having different melting points, an outer solder material extending over an inner solder material bonded to a conductive pad, the inner solder material having a lower melting point than a melting point of the outer solder material and being in a solid state at substantially ambient temperature. A metal material having a higher melting point than a melting point of either solder material may coat at least a portion of the inner solder material. Microelectronic components, assemblies and electronic systems incorporating the solder joints, as well as processes for forming and repairing the solder joints are also disclosed.

公开(公告)号：US20220261871A1

公开(公告)日：2022-08-18

申请号：US17176952

申请日：2021-02-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Carla L. Christensen ,  Bethany M. Grentz ,  Xiao Li ,  Sumana Adusumilli ,  Libo Wang

IPC: G06Q30/06 ,  G06T19/00

Abstract: A size comparison system may generate a size comparison by determining a size of an item based on extracted size data corresponding to the item. A comparison item is selected and the size comparison is generated between the item and the comparison item based on the size of the item. A visual rendering of the item and the comparison item is generated based on the size comparison and is displayed to a user.

公开(公告)号：US11387369B2

公开(公告)日：2022-07-12

申请号：US16723259

申请日：2019-12-20

Applicant: Micron Technology, Inc.

Inventor： Shen Hu ,  Hung-Wei Liu ,  Xiao Li ,  Zhiqiang Xie ,  Corey Staller ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Thomas A. Figura

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: An example apparatus includes forming a working surface of a substrate material. The example apparatus includes trench formed between two semiconductor structures on the working surface of the substrate material. The example apparatus further includes access lines formed on neighboring sidewalls of the semiconductor structures opposing a channel region separating a first source/drain region and a second source/drain region. The example apparatus further includes a time-control formed inhibitor material formed over a portion of the sidewalls of the semiconductor structures. The example apparatus further includes a dielectric material formed over the semiconductor structures to enclose a non-solid space between the access lines.

公开(公告)号：US20220108947A1

公开(公告)日：2022-04-07

申请号：US17064453

申请日：2020-10-06

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Nancy M. Lomeli ,  Xiao Li

IPC: H01L23/522 ,  G11C16/08 ,  G11C16/24 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L21/768

Abstract: A method of forming a microelectronic device includes forming a microelectronic device structure. The microelectronic device structure includes a stack structure comprising insulative structures and electrically conductive structures vertically alternating with the insulative structures, pillar structures extending vertically through the stack structure, an etch stop material vertically overlaying the stack structure, and a first dielectric material vertically overlying the etch stop material. The method further includes removing portions of the first dielectric material, the etch stop material, and an upper region of the stack structure to form a trench interposed between horizontally neighboring groups of the pillar structures, forming a liner material within the trench, and substantially filling a remaining portion of the trench with a second dielectric material to form a dielectric barrier structure.