利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.036 秒)

    Nitride semiconductor device
    22.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US08368183B2

    公开(公告)日：2013-02-05

    申请号：US11263036

    申请日：2005-11-01

    申请人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    发明人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    IPC分类号： H01L29/04

    CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

    摘要： A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction . This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

    摘要翻译： 提供了防止具有均匀厚度的氮化物半导体薄膜和良好的生长面平坦度的裂纹的发展的氮化物半导体装置，因此具有一致的特性，并且可以以令人满意的产量制造。 在这种氮化物半导体器件中，氮化物半导体薄膜在垂直于脊表面的方向与晶体方向<0001>之间具有偏角的衬底上生长。 这有助于通过其移动来减少或有意地促进氮化物半导体薄膜的源材料的原子或分子的扩散或移动。 结果，可以形成具有良好表面平坦度的氮化物半导体生长层，因此可以获得具有令人满意的特性的氮化物半导体器件。

    Master slave flip-flop circuit functioning as edge trigger flip-flop
    26.
    发明授权
    Master slave flip-flop circuit functioning as edge trigger flip-flop 失效
    主从触发器电路用作边沿触发器

    公开(公告)号：US06714060B2

    公开(公告)日：2004-03-30

    申请号：US10358157

    申请日：2003-02-05

    申请人： Masahiro Araki

    发明人： Masahiro Araki

    IPC分类号： H03K3289

    CPC分类号： H03K3/35625 ,  H03K3/356121

    摘要： In a master latch circuit, input data signal is received in a data through state and is held in a data holding state as output data signal. In a slave latch circuit, the output data signal is received in a data through state and is held and output in a data holding state. In a circuit setting control unit, in response to a clock signal, the disconnection of a first line from a power source and the connection of a second line to a ground terminal in an NMOS transistor are performed to set the master latch circuit and the slave latch circuit to the data through state and the data holding state respectively, and the connection of the first line and the disconnection of the second line are performed to change the states of the latch circuits.

    摘要翻译： 在主锁存电路中，输入数据信号在数据通过状态下被接收并保持在数据保持状态作为输出数据信号。 在从锁存电路中，输出数据信号以数据通过状态接收并保持并输出为数据保持状态。 在电路设置控制单元中，响应于时钟信号，执行第一线路与电源的断开以及NMOS晶体管中的第二线路与接地端子的连接，以设置主锁存电路和从机 锁存电路分别与数据通过状态和数据保持状态进行，并且执行第一行的连接和第二行的断开以改变锁存电路的状态。

    Semiconductor device
    27.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08350609B2

    公开(公告)日：2013-01-08

    申请号：US13369063

    申请日：2012-02-08

    申请人： Masahiro Araki ,  Atsuhiko Ishibashi

    发明人： Masahiro Araki ,  Atsuhiko Ishibashi

    IPC分类号： H03K5/12

    CPC分类号： G11C7/1057 ,  G11C13/0002

    摘要： The present invention provides a semiconductor device in which an adjustable range of a resistance value of a variable resistance circuit is large. The semiconductor device has an output buffer including a plurality of sets of resistance elements and a plurality of sets of transistors, a plurality of replica circuits, and a plurality of sets of operational amplifiers, and drain currents of the plurality of sets of transistors are adjusted so that output impedances of the output buffer become predetermined values. Therefore, even in the case where the resistance values of the resistance elements largely fluctuate due to fluctuations in manufacture process and the like, the output impedances can be set to predetermined values.

    摘要翻译： 本发明提供一种半导体器件，其中可变电阻电路的电阻值的可调范围大。 半导体器件具有包括多组电阻元件和多组晶体管，多个复制电路和多组运算放大器的输出缓冲器，并且调节多组晶体管的漏极电流 使得输出缓冲器的输出阻抗变为预定值。 因此，即使在电阻元件的电阻值由于制造工艺等的波动而大幅波动的情况下，也可以将输出阻抗设定为规定值。

    FUNCTIONAL ELEMENT AND MANUFACTURING METHOD OF SAME
    28.
    发明申请
    FUNCTIONAL ELEMENT AND MANUFACTURING METHOD OF SAME 有权
    功能元件及其制造方法

    公开(公告)号：US20120292642A1

    公开(公告)日：2012-11-22

    申请号：US13522883

    申请日：2011-01-18

    申请人： Akihiro Urata ,  Masahiro Araki ,  Takaaki Utsumi ,  Masahiro Shiota

    发明人： Akihiro Urata ,  Masahiro Araki ,  Takaaki Utsumi ,  Masahiro Shiota

    IPC分类号： H01L29/02 ,  H01L29/161 ,  H01L21/78 ,  H01L29/20

    CPC分类号： H01L29/7786 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/0095

    摘要： Provided is a functional element which is obtained by forming a lamination film on a substrate and then dividing the substrate and the lamination film into a desired shape. The functional element has a hexagonal substrate, a lamination film formed on a C surface of the substrate, and a plurality of divided surfaces which are exposed by dividing the substrate into quadrilaterals. At least one line of division lines in the case of dividing the substrate into quadrilaterals is perpendicular to any one of equivalent directions of [1-100], [-1010], and [01-01] of the substrate from a [0001] direction of the substrate, and the divided surfaces formed by the division lines are inclined in a direction of other divided surfaces to which at least a part thereof is opposed.

    摘要翻译： 提供了通过在基板上形成层压膜然后将基板和层压膜分成所需形状而获得的功能元件。 功能元件具有六边形基板，形成在基板的C表面上的层压膜，以及通过将基板分割成四边形而暴露的多个分割表面。 在将衬底分成四边形的情况下，至少一条划分线垂直于[0001]衬底的[1-100]，[-1010]和[01-01]的任何一个方向， 并且由分割线形成的分割面在其至少一部分相对的其他分割面的方向上倾斜。

    Nitride semiconductor device and fabrication method thereof
    29.
    发明申请
    Nitride semiconductor device and fabrication method thereof 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20060094244A1

    公开(公告)日：2006-05-04

    申请号：US11263036

    申请日：2005-11-01

    申请人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    发明人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    IPC分类号： H01L21/311

    CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

    摘要： A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction . This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

    摘要翻译： 提供了防止具有均匀厚度的氮化物半导体薄膜和良好的生长面平坦度的裂纹的发展的氮化物半导体装置，因此具有一致的特性，并且可以以令人满意的产量制造。 在这种氮化物半导体器件中，氮化物半导体薄膜在垂直于脊表面的方向与晶体方向<0001>之间具有偏角的衬底上生长。 这有助于通过其移动来减少或有意地促进氮化物半导体薄膜的源材料的原子或分子的扩散或移动。 结果，可以形成具有良好表面平坦度的氮化物半导体生长层，因此可以获得具有令人满意的特性的氮化物半导体器件。

    Nitride semiconductor light emitting element and optical device containing it
    30.
    发明授权
    Nitride semiconductor light emitting element and optical device containing it 失效
    氮化物半导体发光元件和含有它的光学装置

    公开(公告)号：US07012283B2

    公开(公告)日：2006-03-14

    申请号：US10381113

    申请日：2001-09-17

    申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Masahiro Araki

    发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Masahiro Araki

    IPC分类号： H01L29/06

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/34333 ,  H01S5/34346

    摘要： According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer (106) having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz (0

    摘要翻译： 根据本发明的一个方面，氮化物半导体发光器件包括具有量子阱结构的发光层（106），其量子阱层和势垒层交替层叠。 阱层由包含In的氮化物半导体形成，并且阻挡层由含有As，P或Sb的氮化物半导体层形成。 根据本发明的另一方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。 阱层由GaN 1-xyz（0