摘要:
A semiconductor integrated circuit includes a temperature detecting unit that detects the temperature of a chip, and an A/D converter that converts an analog output VBE from the temperature detecting unit into a digital output. The A/D converter includes an up/down counter, a D/A converter that converts an output T2 from the up/down counter into an analog output, and a comparator that compares the analog output DAC_OUT of the D/A converter and the analog output VBE (VTEMP) of the temperature detecting unit. The up/down counter is adapted to be able to preset an initial value that is different from the minimum value or the maximum value. Accordingly, the determination time required at the initial conversion can be reduced although the linear search method is used.
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.
摘要:
A varistor comprises an element body, two external electrodes, and a metal conductor. The element body includes a portion having first and second faces opposing each other. Two external electrodes are arranged on the first face of the element body. The metal conductor is arranged on the second face of the element body. The metal conductor has a thermal conductivity higher than that of the element body. At least a region between the two external electrodes and metal conductor in the element body exhibits a nonlinear current-voltage characteristic. The heat transmitted to the varistor is efficiently diffused from the metal conductor in the varistor.
摘要:
A semiconductor test circuit includes an input terminal, a controller, a setting circuit, a command generator, a transmission path switching circuit and a comparator. The input terminal receives a serial data including a command code and a control data. The controller receives a control signal and outputs an internal control signal based on the control signal. The setting circuit receives the serial data and outputs it in response to the internal control signal. The command generator generates an interface signal based on the serial data received from the setting circuit. The switching circuit has ports, receives the signal from one of the ports and outputs the received signal to another one of the ports in response to the internal control signal and the command code. The comparator compares the interface signal received from the command generator with the signal received from the switching circuit.
摘要:
A fluid circuit module controls a fluid to be supplied to a movable element in an automatic transmission. The fluid circuit module is provided with a first body in which a first flow passage is formed, a second body in which a second flow passage is formed. A separation plate is set between the first body and the second body and has a deformation portion that is deformed and strained in accordance with the difference between pressures in the first flow passage and the second flow passage. A strain sensor is attached to the deformation portion for detecting a strain of the deformation portion. A control means controls a supply fluid to be supplied to the movable element on the basis of a detection result of the strain sensor.
摘要:
An electrically programmable and erasable non-volatile semiconductor memory such as a flash memory is designed into a configuration in which, when a cutoff of the power supply occurs in the course of a write or erase operation carried out on a memory cell employed in the non-volatile semiconductor memory, the operation currently being executed is discontinued and a write-back operation is carried out to change a threshold voltage of the memory cell in the reversed direction. In addition, the configuration also allows the number of charge-pump stages in an internal power-supply configuration to be changed in accordance with the level of a power-supply voltage so as to make the write-back operation correctly executable. As a result, no memory cells are put in deplete state even in the event of a power-supply cutoff in the course of a write or erase operation.
摘要:
A cam mechanism for a lens barrel includes an annular member which is linearly guided along an optical axis, and having a cam follower on an outer peripheral surface; a cam ring having a cam groove on an inner peripheral surface including a photographing section and an accommodation section, the cam follower being engaged in the cam groove; and a biasing device for biasing the annular member forward to normally press the cam follower against a front cam surface in the cam groove. A rear end portion of the cam groove is open at a rear end surface of the cam ring to serve as the accommodation section, and the cam follower is disengageable from the front cam surface in the cam groove against a biasing force of the biasing device when the cam follower is engaged in the accommodation section.
摘要:
A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.
摘要:
A semiconductor IC device is designed using a memory core with a plurality of I/O lines, a transfer circuit module and a logic library which are produced beforehand and stored in a data base. The memory core and a logic circuit are arranged so that their I/O lines extend in the same direction. A transfer circuit including plural stages of switch groups is arranged between the I/O lines of the memory core and the I/O lines of the logic circuit. Switches forming each stage of switch group are formed between the I/O lines of the memory core and the I/O lines of the logic circuit. When one stage of or a small number of stages of switch groups are turned on, the I/O lines of the memory core and the I/O lines of the logic circuit are turned on, thereby forming a desired transfer pattern. The memory core is constructed by the combination of functional modules such as an amplifier module, a bank module and a power supply module. In the bank module are arranged row-system circuits which operate independently of each other and a multiplicity of I/O lines which extend in a bit line direction.
摘要:
A vehicle headlamp including a lighting circuit unit for lighting a discharge bulb, the lighting circuit unit being provided on an exterior surface of the side wall of the lamb body that is located on the inner side of the lamp body with respect to the width direction of a vehicle. An electric supply cord extending from the lighting circuit unit is disposed along the reflecting surface backside portion of a reflector that is installed in the lamp body.