公开(公告)号：US20210005514A1

公开(公告)日：2021-01-07

申请号：US16991965

申请日：2020-08-12

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Ross S. Dando

IPC: H01L21/768 ,  H01L23/48

Abstract: Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.

公开(公告)号：US20200219793A1

公开(公告)日：2020-07-09

申请号：US16722652

申请日：2019-12-20

Applicant: Micron Technology, Inc.

Inventor： Warren M. Farnworth ,  Rick C. Lake ,  William M. Hiatt

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/488 ,  H01L21/768 ,  H01L23/498

Abstract: Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

公开(公告)号：US20180342477A1

公开(公告)日：2018-11-29

申请号：US16055492

申请日：2018-08-06

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Kyle K. Kirby

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/48 ,  H01L25/00 ,  H01L25/065 ,  H01L21/683 ,  H01L23/498

Abstract: Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.

公开(公告)号：US20180304411A1

公开(公告)日：2018-10-25

申请号：US16025332

申请日：2018-07-02

Applicant: Micron Technology, Inc.

Inventor： Charles M. Watkins ,  William M. Hiatt

IPC: B23K26/382 ,  B23K26/38 ,  B23K26/03 ,  B23K26/361 ,  B23K26/362 ,  H05K3/00 ,  H01L21/768 ,  H01L21/48 ,  B23K26/40 ,  B23K101/40 ,  B23K103/00

CPC classification number: B23K26/382 ,  B23K26/03 ,  B23K26/0342 ,  B23K26/361 ,  B23K26/362 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L21/76898 ,  H05K3/0026 ,  H05K2203/163 ,  Y10T29/49165

Abstract: Systems and methods for forming apertures in microfeature workpieces are disclosed herein. In one embodiment, a method includes directing a laser beam toward a microfeature workpiece to form an aperture and sensing the laser beam pass through the microfeature workpiece in real time. The method can further include determining a number of pulses of the laser beam and/or an elapsed time to form the aperture and controlling the laser beam based on the determined number of pulses and/or the determined elapsed time to form a second aperture in the microfeature workpiece.

公开(公告)号：US10010977B2

公开(公告)日：2018-07-03

申请号：US15276627

申请日：2016-09-26

Applicant: Micron Technology, Inc.

Inventor： Charles M. Watkins ,  William M. Hiatt

IPC: B23K26/382 ,  B23K26/03 ,  B23K26/362 ,  H01L21/768 ,  H05K3/00 ,  H01L21/48 ,  B23K26/38 ,  B23K26/40 ,  B23K26/361 ,  B23K103/00 ,  B23K101/40

CPC classification number: B23K26/382 ,  B23K26/03 ,  B23K26/0342 ,  B23K26/361 ,  B23K26/362 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L21/76898 ,  H05K3/0026 ,  H05K2203/163 ,  Y10T29/49165

Abstract: Systems and methods for forming apertures in microfeature workpieces are disclosed herein. In one embodiment, a method includes directing a laser beam toward a microfeature workpiece to form an aperture and sensing the laser beam pass through the microfeature workpiece in real time. The method can further include determining a number of pulses of the laser beam and/or an elapsed time to form the aperture and controlling the laser beam based on the determined number of pulses and/or the determined elapsed time to form a second aperture in the microfeature workpiece.

公开(公告)号：US20170323828A1

公开(公告)日：2017-11-09

申请号：US15662204

申请日：2017-07-27

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Ross S. Dando

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/13025

Abstract: Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.

公开(公告)号：US09737947B2

公开(公告)日：2017-08-22

申请号：US14165030

申请日：2014-01-27

Applicant: Micron Technology, Inc.

Inventor： Warren M. Farnworth ,  Rickie C. Lake ,  William M. Hiatt

IPC: B23K35/14 ,  H01L29/40 ,  H01L23/48 ,  B23K1/20 ,  B23K1/00 ,  B23K35/22

CPC classification number: B23K1/20 ,  B23K1/0016 ,  B23K35/22 ,  H01L29/40 ,  H01L2224/05001 ,  H01L2224/11 ,  Y10T428/12493 ,  Y10T428/12708 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903

Abstract: Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

公开(公告)号：US09343368B2

公开(公告)日：2016-05-17

申请号：US14324958

申请日：2014-07-07

Applicant: Micron Technology, Inc. ,  Russell D. Slifer

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L21/768 ,  H01L23/48 ,  H01L21/82 ,  H01L23/525 ,  H01L23/60 ,  H01L25/065 ,  H01L25/00 ,  H01L21/50 ,  H01L23/52 ,  H01L23/62

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

公开(公告)号：US20140284796A1

公开(公告)日：2014-09-25

申请号：US14300004

申请日：2014-06-09

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Kyle K. Kirby

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L24/14 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2225/06506 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.

Abstract translation: 本文公开了用于在微特征工件和模具中填充通孔并形成导电互连的微电子器件和方法。 在一个实施例中，一种方法包括提供具有多个模具的微特征工件和从微特征工件的第一侧延伸穿过微特征工件的至少一个通道到微特征工件的相对的第二侧。 该方法还可以包括在邻近微电子工件的第一侧的通道中形成导电插塞，以及在通道中沉积导电材料，以至少大体上填充从导电插头到微电子工件的第二侧的通道。

公开(公告)号：US20140284375A1

公开(公告)日：2014-09-25

申请号：US14165030

申请日：2014-01-27

Applicant: Micron Technology, Inc.

Inventor： Warren M. Farnworth ,  Rickie C. Lake ,  William M. Hiatt

IPC: B23K1/20

CPC classification number: B23K1/20 ,  B23K1/0016 ,  B23K35/22 ,  H01L29/40 ,  H01L2224/05001 ,  H01L2224/11 ,  Y10T428/12493 ,  Y10T428/12708 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903

Abstract: Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

Abstract translation: 公开了具有合金导电结构的微型工件和相关方法。 根据一个实施例的方法包括将一定体积的材料施加到微特征工件的接合焊盘，其中所述材料的体积包括第一金属成分，并且所述接合焊盘包括第二成分。 该方法还可以包括升高材料体积的温度，同时将材料的体积施加到接合垫以使第一金属构件和第二金属构件合金，使得第一金属构件通常在整个体积的材料中合金化。 接合焊盘的厚度可以从初始厚度T1减小到减小的厚度T2。