公开(公告)号：US20060148186A1

公开(公告)日：2006-07-06

申请号：US11220020

申请日：2005-09-06

申请人： Soo Min Lee ,  Masayoshi Koike ,  Kyeong Ik Min ,  Cheol Kyu Kim ,  Sung Hwan Jang ,  Min Ho Kim

发明人： Soo Min Lee ,  Masayoshi Koike ,  Kyeong Ik Min ,  Cheol Kyu Kim ,  Sung Hwan Jang ,  Min Ho Kim

IPC分类号： H01L21/336

CPC分类号： C30B29/406 ,  C30B29/64 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02664

摘要： A method and apparatus for manufacturing a nitride based single crystal substrate. The method includes placing a preliminary substrate on a susceptor installed in a reaction chamber; growing a nitride single crystal layer on the preliminary substrate; and irradiating a laser beam to separate the nitride single crystal layer from the preliminary substrate under the condition that the preliminary substrate is placed in the reaction chamber.

摘要翻译： 一种用于制造氮化物基单晶衬底的方法和装置。 该方法包括将初步衬底放置在安装在反应室中的基座上; 在初始衬底上生长氮化物单晶层; 并且在预备衬底放置在反应室中的条件下照射激光束以将氮化物单晶层与预备衬底分离。

公开(公告)号：US06843587B2

公开(公告)日：2005-01-18

申请号：US10419527

申请日：2003-04-21

申请人： Deuk Il Park ,  Soon Cheon Cho ,  Sang Mook Kim ,  Ok Bin Sur ,  Choong Yop Rhew ,  Min Ho Kim ,  Chi Un Jo ,  Sung Su Zoo

发明人： Deuk Il Park ,  Soon Cheon Cho ,  Sang Mook Kim ,  Ok Bin Sur ,  Choong Yop Rhew ,  Min Ho Kim ,  Chi Un Jo ,  Sung Su Zoo

IPC分类号： F21V8/00 ,  G02B6/00 ,  F21V5/00

CPC分类号： G02B6/0065 ,  G02B6/0036 ,  G02B6/0061

摘要： An apparatus for manufacturing a surface light source apparatus in which a light guide pattern portion is formed on a light guide panel includes a pattern design system to which data about a pattern to be formed on the light guide pattern is input. A control system is connected to the pattern design system and transmits a position signal matching a coordinate value of each pattern to be formed on the light guide panel. A header moving portion mechanically moves vertically and horizontally according to the position signal received from the control system. A laser system outputs a laser beam according to a pulse signal synchronized with a movement of the header moving portion. A lens portion allows a laser beam output from the laser system to pass the header moving portion and to be focused on a scanning surface of the light guide panel. A warp prevention unit prevents the light guide panel from warping due to a local heating by the laser beam. An absorption and scattering prevention unit prevents smoke generated when the light guide pattern portion is formed on the light guide panel.

摘要翻译： 在导光板上形成有导光图案部的面光源装置的制造装置包括：图案设计系统，其中输入有关在导光图案上形成的图案的数据。 控制系统连接到图案设计系统，并且传送与要在光导面板上形成的每个图案的坐标值相匹配的位置信号。 标题移动部分根据从控制系统接收的位置信号机械地垂直和水平移动。 激光系统根据与头部移动部分的移动同步的脉冲信号输出激光束。 透镜部分允许从激光系统输出的激光束通过头部移动部分并聚焦在导光板的扫描表面上。 翘曲防止部防止由于激光束的局部加热引起的导光板翘曲。 吸收和散射防止单元防止在导光板上形成导光图案部分时产生的烟雾。

公开(公告)号：USD955901S1

公开(公告)日：2022-06-28

申请号：US35511208

申请日：2020-10-07

申请人： So Young Ahn ,  Min Ho Kim

设计人： So Young Ahn ,  Min Ho Kim

公开(公告)号：US09894301B2

公开(公告)日：2018-02-13

申请号：US14877539

申请日：2015-10-07

申请人： Young Gu Jin ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

发明人： Young Gu Jin ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

IPC分类号： H01L27/00 ,  H04N5/363 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/378

CPC分类号： H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

公开(公告)号：US09715740B2

公开(公告)日：2017-07-25

申请号：US14064639

申请日：2013-10-28

申请人： Young-Gu Jin ,  Jung-Seop Kim ,  Dong-Wook Kwon ,  Kyung-Il Kim ,  Min Ho Kim ,  Gi-Sang Lee ,  Sang-Bo Lee ,  Jin-Kyung Lee ,  Jin-Wuk Choi

发明人： Young-Gu Jin ,  Jung-Seop Kim ,  Dong-Wook Kwon ,  Kyung-Il Kim ,  Min Ho Kim ,  Gi-Sang Lee ,  Sang-Bo Lee ,  Jin-Kyung Lee ,  Jin-Wuk Choi

IPC分类号： G06T7/254

CPC分类号： G06T7/254 ,  G06T2207/10016 ,  G06T2207/10024 ,  G06T2207/10028 ,  G06T2207/30232 ,  G06T2207/30241

摘要： A method of recognizing motion of an object may include periodically obtaining depth data of a first resolution and two-dimensional data of a second resolution with respect to a scene using an image capturing device, wherein the second resolution is higher than the first resolution; determining a motion tracking region by recognizing a target object in the scene based on the depth data, such that the motion tracking region corresponds to a portion of a frame and the portion includes the target object; periodically obtaining tracking region data of the second resolution corresponding to the motion tracking region; and/or analyzing the motion of the target object based on the tracking region data.

公开(公告)号：US08624516B2

公开(公告)日：2014-01-07

申请号：US13164308

申请日：2011-06-20

申请人： Ui Jong Kim ,  Min Ho Kim

发明人： Ui Jong Kim ,  Min Ho Kim

IPC分类号： H05B37/02

CPC分类号： H05B33/089 ,  H05B33/0815 ,  Y02B20/346

摘要： A power supply apparatus for LED is provided. The power supply apparatus for LED includes a detector, a voltage dropper, and a control switch. The detector detects whether an LED is connected to the power supply apparatus. The voltage dropper drops a voltage applied to the LED. The control switch is connected to the voltage dropper in parallel, and changes a path of a power applied to the LED according to the detected result of the detector. Accordingly, the power supply apparatus for LED compensates for a low impedance of an LED to an impedance equal to or higher than a predetermined impedance at a time when connection of the LED is detected, thereby inhibiting an overcurrent from flowing in the LED.

摘要翻译： 提供一种用于LED的电源装置。 用于LED的电源装置包括检测器，电压降器和控制开关。 检测器检测LED是否连接到电源设备。 电压降器降低施加到LED的电压。 控制开关并联连接到电压降器，并根据检测器的检测结果改变施加到LED的电力的路径。 因此，LED的供电装置在检测到LED的连接时补偿LED的低阻抗到等于或高于预定阻抗的阻抗，从而抑制过电流在LED中流动。

公开(公告)号：US07737429B2

公开(公告)日：2010-06-15

申请号：US11204226

申请日：2005-08-16

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅衬底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US20080126159A1

公开(公告)日：2008-05-29

申请号：US11946037

申请日：2007-11-27

申请人： Wu Sic Wee ,  Jung Soo Ha ,  Eun Joo Park ,  Min Uk Kim ,  Sung Wook Moon ,  Jung Hyun Hwang ,  Min Ho Kim

发明人： Wu Sic Wee ,  Jung Soo Ha ,  Eun Joo Park ,  Min Uk Kim ,  Sung Wook Moon ,  Jung Hyun Hwang ,  Min Ho Kim

IPC分类号： G06Q30/00 ,  G06Q10/00

CPC分类号： G06Q30/00 ,  G06Q30/0204 ,  G06Q30/0267

摘要： A method of managing an advertisement and a system for executing the method are provided. The method of managing the advertisement includes the steps of: detecting non-relevant traffics to an online advertisement of an advertiser; notifying said advertiser of the non-relevant traffics to said online advertisement; and upon receipt of said advertiser's request, stopping said online advertisement based, at least in part, upon the advertiser's request

摘要翻译： 提供一种管理广告的方法和用于执行该方法的系统。 管理广告的方法包括以下步骤：检测与广告主的在线广告的不相关的流量; 向所述广告商通知所述在线广告的不相关的流量; 并且在接收到所述广告商的请求之后，至少部分地基于广告主的请求停止所述在线广告

公开(公告)号：US20080099781A1

公开(公告)日：2008-05-01

申请号：US11898955

申请日：2007-09-18

申请人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

发明人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.

摘要翻译： 一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶 在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

公开(公告)号：US20080078986A1

公开(公告)日：2008-04-03

申请号：US11902396

申请日：2007-09-21

申请人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。