公开(公告)号：USRE41697E1

公开(公告)日：2010-09-14

申请号：US11235648

申请日：2005-09-26

申请人： Chia-Tung Ho ,  Feng-Jia Shih ,  Jieh-Jang Chen ,  Ching-Sen Kuo ,  Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Chia-Tung Ho ,  Feng-Jia Shih ,  Jieh-Jang Chen ,  Ching-Sen Kuo ,  Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  G03F7/0035 ,  G03F7/09 ,  G03F7/16 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： A method of forming a planarized photoresist coating on a substrate having holes with different duty ratios is described. A first photoresist preferably comprised of a Novolac resin and a diazonaphthoquinone photoactive compound is coated on a substrate and baked at or slightly above its Tg so that it reflows and fills the holes. The photoresist is exposed without a mask at a dose that allows the developer to thin the photoresist to a recessed depth within the holes. After the photoresist is hardened with a 250° C. bake, a second photoresist is coated on the substrate to form a planarized film with a thickness variation of less than 50 Angstroms between low and high duty ratio hole regions. One application is where the second photoresist is used to form a trench pattern in a via first dual damascene method. Secondly, the method is useful in fabricating MIM capacitors.

摘要翻译： 描述了在具有不同占空比的孔的基板上形成平坦化光致抗蚀剂涂层的方法。 优选将包含酚醛清漆树脂和重氮萘醌光敏化合物的第一光致抗蚀剂涂覆在基材上并在其Tg以上或略高于其Tg的温度下使其回流并填充孔。 以允许显影剂将光致抗蚀剂减薄到孔内的凹陷深度的剂量，光刻胶不用掩模曝光。 在250℃烘烤后光致抗蚀剂硬化后，在基板上涂覆第二光致抗蚀剂，以形成厚度变化小于50埃的低和高占空比孔区域的平坦化膜。 一种应用是第二光致抗蚀剂用于以通孔第一双镶嵌方法形成沟槽图案。 其次，该方法在制造MIM电容器方面是有用的。

公开(公告)号：US07713079B2

公开(公告)日：2010-05-11

申请号：US12494175

申请日：2009-06-29

申请人： Shih-Chi Fu

发明人： Shih-Chi Fu

IPC分类号： H01R13/62

CPC分类号： H01R12/721 ,  H01R12/7029

摘要： A card edge connector includes an insulating body having opposite lateral side frames for mounting respectively two metallic pieces thereon, and terminals mounted in the insulating body and coupled to a circuit board. When an insertion side with conductive terminals of an electronic card is inserted into an insertion groove in the insulating body, the conductive terminals contact respectively contact portions of the terminals extending into the insertion groove. Each metallic piece includes first and second resilient arms extending from a base, and a carved metallic piece extending from the first resilient arm. When the insertion side of the electronic card is inserted into the insertion groove, each lateral side of the electronic card is clamped between the anchoring member and the second resilient arm of a corresponding metallic piece, and is formed with a notch engaging a projection of the second resilient arm of the corresponding metallic piece.

摘要翻译： 卡边缘连接器包括具有相对的侧边框架的绝缘体，用于在其上分别安装两个金属件，以及安装在绝缘体中并连接到电路板的端子。 当将具有电子卡的导电端子的插入侧插入绝缘体中的插入槽中时，导电端子分别接触延伸到插入槽中的端子的接触部分。 每个金属件包括从基座延伸的第一和第二弹性臂和从第一弹性臂延伸的雕刻金属片。 当电子卡的插入侧插入到插入槽中时，电子卡的每个横向侧被夹持在相应金属片的锚定构件和第二弹性臂之间，并且形成有凹口，该凹口与 相应金属片的第二弹性臂。

公开(公告)号：US20090039452A1

公开(公告)日：2009-02-12

申请号：US11835814

申请日：2007-08-08

申请人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/00

CPC分类号： H01L27/14643 ,  H01L24/05 ,  H01L27/14636 ,  H01L2224/05556 ,  H01L2924/12043 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.

摘要翻译： 半导体器件包括具有前表面和后表面的半导体衬底，形成在衬底上的元件，形成在衬底的前表面上的互连金属层，包括最上面的互连金属层，用于绝缘的金属间电介质 所述多个互连金属层和设置在所述金属间电介质内的接合焊盘，所述接合焊盘与所述互连金属层中的一个互连金属层之外的最上面的互连金属层接触。

公开(公告)号：US06645851B1

公开(公告)日：2003-11-11

申请号：US10245429

申请日：2002-09-17

申请人： Chia-Tung Ho ,  Feng-Jia Shih ,  Jieh-Jang Chen ,  Ching-Sen Kuo ,  Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsia

发明人： Chia-Tung Ho ,  Feng-Jia Shih ,  Jieh-Jang Chen ,  Ching-Sen Kuo ,  Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsia

IPC分类号： H01L214763

CPC分类号： H01L21/76808 ,  G03F7/0035 ,  G03F7/09 ,  G03F7/16 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： A method of forming a planarized photoresist coating on a substrate having holes with different duty ratios is described. A first photoresist preferably comprised of a Novolac resin and a diazonaphthoquinone photoactive compound is coated on a substrate and baked at or slightly above its Tg so that it reflows and fills the holes. The photoresist is exposed without a mask at a dose that allows the developer to thin the photoresist to a recessed depth within the holes. After the photoresist is hardened with a 250° C. bake, a second photoresist is coated on the substrate to form a planarized film with a thickness variation of less than 50 Angstroms between low and high duty ratio hole regions. One application is where the second photoresist is used to form a trench pattern in a via first dual damascene method. Secondly, the method is useful in fabricating MIM capacitors.

摘要翻译： 描述了在具有不同占空比的孔的基板上形成平坦化光致抗蚀剂涂层的方法。 优选将包含酚醛清漆树脂和重氮萘醌光敏化合物的第一光致抗蚀剂涂覆在基材上并在其Tg以上或略高于其Tg的温度下使其回流并填充孔。 以允许显影剂将光致抗蚀剂减薄到孔内的凹陷深度的剂量，光刻胶不用掩模曝光。 在250℃烘烤后光致抗蚀剂硬化后，在基板上涂覆第二光致抗蚀剂，以形成厚度变化小于50埃的低和高占空比孔区域的平坦化膜。 一种应用是第二光致抗蚀剂用于以通孔第一双镶嵌方法形成沟槽图案。 其次，该方法在制造MIM电容器方面是有用的。

公开(公告)号：US09171876B2

公开(公告)日：2015-10-27

申请号：US14291384

申请日：2014-05-30

申请人： Shih-Chi Fu ,  Kai Tzeng ,  Wen-Chen Lu

发明人： Shih-Chi Fu ,  Kai Tzeng ,  Wen-Chen Lu

IPC分类号： H01L21/02 ,  H01L21/331 ,  H01L27/146 ,  H01L21/762 ,  H01L31/18

CPC分类号： H01L27/14887 ,  H01L21/76237 ,  H01L27/1463 ,  H01L27/14654 ,  H01L27/14672 ,  H01L27/14683 ,  H01L27/14689 ,  H01L31/18

摘要： A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate. The method includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements and starting at a distance below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with a top portion of the deep doped region.

摘要翻译： 一种在衬底上的两个相邻传感器元件之间制备自对准隔离区域的方法。 该方法包括图案化氧化物层以在衬底上的两个相邻传感器元件之间形成开口。 所述方法还包括执行第一注入以在所述两个相邻的传感器元件之间形成深掺杂区域并且从所述衬底的顶表面下方的距离开始。 该方法还包括执行第二植入以在两个相邻传感器元件之间形成浅掺杂区域，其中浅掺杂区域的底部与深掺杂区域的顶部部分重叠。

公开(公告)号：US09040341B2

公开(公告)日：2015-05-26

申请号：US13487840

申请日：2012-06-04

申请人： Wen-Chen Lu ,  Ching-Sen Kuo ,  Shih-Chi Fu ,  Ming-Ying Hsieh

发明人： Wen-Chen Lu ,  Ching-Sen Kuo ,  Shih-Chi Fu ,  Ming-Ying Hsieh

IPC分类号： H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

摘要： A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.

摘要翻译： 形成图像传感器装置的方法包括在衬底上形成图案化的硬掩模层。 图案化的硬掩模层在周边区域中具有多个第一开口，在像素区域中具有多个第二开口。 在像素区域上形成第一图案化掩模层以暴露外围区域。 多个第一沟槽被蚀刻到周边区域中的衬底中。 每个第一沟槽，每个第一开口和每个第二开口都填充有电介质材料。 在外围区域上形成第二图案化掩模层以暴露像素区域。 在像素区域上的每个第二开口中的电介质材料被去除。 通过每个第二开口注入多个掺杂剂，以在像素区域中形成各种掺杂的隔离特征。

公开(公告)号：US08587084B2

公开(公告)日：2013-11-19

申请号：US13342148

申请日：2012-01-02

申请人： Shih-Chi Fu ,  Ching-Sen Kuo ,  Wen-Chen Lu ,  Chih-Yuan Chen

发明人： Shih-Chi Fu ,  Ching-Sen Kuo ,  Wen-Chen Lu ,  Chih-Yuan Chen

IPC分类号： H01L21/70 ,  H01L21/76

CPC分类号： H01L27/14614 ,  H01L27/14689

摘要： A sensor array is integrated onto the same chip as core logic. The sensor array uses a first polysilicon and the core logic uses a second polysilicon. The first polysilicon is etched to provide a tapered profile edge in the interface between the sensor array and the core logic regions to avoid an excessive step. Amorphous carbon can be deposited over the interface region without formation of voids, thus providing for improved manufacturing yield and reliability.

摘要翻译： 传感器阵列集成到与核心逻辑相同的芯片上。 传感器阵列使用第一多晶硅，核心逻辑使用第二多晶硅。 蚀刻第一多晶硅以在传感器阵列和核心逻辑区域之间的接口中提供锥形轮廓边缘，以避免过度的步骤。 无定形碳可以在界面区域上沉积而不形成空隙，从而提供改善的制造成品率和可靠性。

公开(公告)号：US20130207163A1

公开(公告)日：2013-08-15

申请号：US13370132

申请日：2012-02-09

申请人： Chun-Chang Chen ,  Shun-Shing Yang ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung-Chang Hsieh

发明人： Chun-Chang Chen ,  Shun-Shing Yang ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung-Chang Hsieh

IPC分类号： H01L27/04 ,  H01L21/20 ,  H01L29/02

CPC分类号： H01L21/823437 ,  H01L21/0274 ,  H01L21/32139 ,  H01L27/1052

摘要： Semiconductor devices and manufacturing methods thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece with a first region having a plurality of first features and a second region having a plurality of second features proximate the first region. The first region and the second region share a patterning overlap region disposed between the first region and the second region. The patterning overlap region includes a residue feature with an aspect ratio of about 4 or less.

摘要翻译： 公开了半导体器件及其制造方法。 在一个实施例中，半导体器件包括具有多个第一特征的第一区域的工件和具有靠近第一区域的多个第二特征的第二区域。 第一区域和第二区域共享布置在第一区域和第二区域之间的图案化重叠区域。 图案重叠区域包括长宽比为约4或更小的残留特征。

公开(公告)号：US20080087921A1

公开(公告)日：2008-04-17

申请号：US11542064

申请日：2006-10-03

申请人： Chung-Yi Yu ,  Chia-Shiung Tsai ,  Shih-Chi Fu

发明人： Chung-Yi Yu ,  Chia-Shiung Tsai ,  Shih-Chi Fu

IPC分类号： H01L29/76 ,  H01L29/745

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor device is provided. A substrate has a photosensor region formed therein and/or thereon. An interconnection structure is formed over the substrate, and includes metal lines formed in inter-metal dielectric (IMD) layers. At least one IMD-level micro-lens is/are formed in at least one of the IMD layers over the photosensor region. Preferably, barrier layers are located between the IMD layers. Preferably, each of the barrier layers at each level has a net thickness limited to 100 angstroms or less at locations over the photosensor region, except at locations where the IMD-level micro-lenses are located. The IMD-level micro-lenses and the etch stop layers preferably have a refractive index greater than that of the IMD layers. A cap layer is preferably formed on the metal lines, especially when the metal lines include copper. An upper-level micro-lens may be located on a level that is above the interconnection structure.

摘要翻译： 提供图像传感器装置。 衬底在其中和/或其上形成有光电传感器区域。 在衬底上形成互连结构，并且包括在金属间电介质（IMD）层中形成的金属线。 在光电传感器区域中的至少一个IMD层中形成至少一个IMD级微透镜。 优选地，阻挡层位于IMD层之间。 优选地，除了在IMD级微透镜所在的位置之外，每个级别的每个阻挡层的净厚度在光电传感器区域之外的位置处具有限制在100埃或更小的净厚度。 IMD级微透镜和蚀刻停止层优选具有大于IMD层的折射率的折射率。 优选在金属线上形成覆盖层，特别是当金属线包括铜时。 上级微透镜可以位于互连结构之上的层上。

公开(公告)号：US20130181320A1

公开(公告)日：2013-07-18

申请号：US13350010

申请日：2012-01-13

申请人： Chun-Chang Chen ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung-Chang Hsieh

发明人： Chun-Chang Chen ,  Shih-Chi Fu ,  Wang-Pen Mo ,  Hung-Chang Hsieh

IPC分类号： H01L29/00 ,  B44C1/22 ,  H01L21/311

CPC分类号： H01L21/0276 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823456

摘要： Some embodiments relate to a method for processing a workpiece. In the method, an anti-reflective coating layer is provided over the workpiece. A first patterned photoresist layer, which has a first photoresist tone, is provided over the anti-reflective coating layer. A second patterned photoresist layer, which has a second photoresist tone opposite the first photoresist tone, is provided over the first patterned photoresist layer. An opening extends through the first and second patterned photoresist layers to allow a treatment to be applied to the workpiece through the opening. Other embodiments are also disclosed.

摘要翻译： 一些实施例涉及用于处理工件的方法。 在该方法中，在工件上方设有抗反射涂层。 具有第一光致抗蚀剂色调的第一图案化光致抗蚀剂层设置在抗反射涂层上。 在第一图案化光致抗蚀剂层上提供具有与第一光致抗蚀剂色调相反的第二光致抗蚀剂色调的第二图案化光致抗蚀剂层。 开口延伸穿过第一和第二图案化的光致抗蚀剂层，以允许通过开口对工件施加处理。 还公开了其他实施例。