公开(公告)号：US06982496B2

公开(公告)日：2006-01-03

申请号：US10425664

申请日：2003-04-30

申请人： Hirofumi Abe ,  Hiroyuki Ban

发明人： Hirofumi Abe ,  Hiroyuki Ban

IPC分类号： H01L29/06 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/544

CPC分类号： H01L23/562 ,  H01L24/10 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/14 ,  H01L2924/01078

摘要： A semiconductor device includes a substrate, a plurality of bump electrodes disposed on the substrate, and a support area for supporting the substrate in case of carrying the substrate. The support area is disposed on a surface of the substrate, on which the bump electrode is disposed, and is disposed at a predetermined position, which is dotted on the surface of the substrate. In this device, the support area is sufficiently small, and the number of the bump electrodes can increase. Moreover, degree of freedom in a configuration of the support area increases.

摘要翻译： 半导体器件包括衬底，设置在衬底上的多个凸块电极，以及用于在承载衬底的情况下支撑衬底的支撑区域。 支撑区域设置在其上设置有凸起电极的基板的表面上，并且被布置在点状在基板的表面上的预定位置处。 在该装置中，支撑区域足够小，并且凸起电极的数量可以增加。 此外，支撑区域的配置的自由度增加。

公开(公告)号：US06972973B2

公开(公告)日：2005-12-06

申请号：US10716560

申请日：2003-11-20

申请人： Hirofumi Abe ,  Hirokazu Itakura ,  Hiroyuki Ban ,  Shoichi Okuda ,  Kingo Ota

发明人： Hirofumi Abe ,  Hirokazu Itakura ,  Hiroyuki Ban ,  Shoichi Okuda ,  Kingo Ota

IPC分类号： H02M3/07 ,  H02M3/18 ,  G05F3/08

CPC分类号： H02M3/18 ,  H02M3/073

摘要： In a voltage booster, a voltage detection circuit detects a battery voltage as an input voltage. If the input voltage is lower than a threshold level, an oscillation circuit outputs a gate signal having a relatively high frequency to increase the driving performance of a driving circuit. If the input voltage is higher than the threshold level, the frequency of the gate signal is lowered so as to prevent the driving performance of the driving circuit from rising to an excessively high value. As a result, a predetermined boosted voltage can be obtained regardless of variations in input voltage without using a filter for eliminating noise.

摘要翻译： 在升压器中，电压检测电路检测电池电压作为输入电压。 如果输入电压低于阈值电平，则振荡电路输出具有较高频率的门信号，以提高驱动电路的驱动性能。 如果输入电压高于阈值电平，则门信号的频率降低，以防止驱动电路的驱动性能上升到过高的值。 结果，无需使用用于消除噪声的滤波器，就可以获得预定的升压电压而不管输入电压的变化。

公开(公告)号：US06287933B1

公开(公告)日：2001-09-11

申请号：US08015268

申请日：1992-01-03

申请人： Makio Iida ,  Shoji Miura ,  Kanemitsu Terada ,  Hiroyuki Ban ,  Kiyoshi Yamamoto ,  Katsuyoshi Oda ,  Yoshihiko Isobe

发明人： Makio Iida ,  Shoji Miura ,  Kanemitsu Terada ,  Hiroyuki Ban ,  Kiyoshi Yamamoto ,  Katsuyoshi Oda ,  Yoshihiko Isobe

IPC分类号： H01L2120

CPC分类号： H01L28/24

摘要： A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the semiconductor device having a characteristic such that variations of the resistance value thereof due to temperature variations can be effectively suppressed.

摘要翻译： 一种具有薄膜电阻器的半导体器件，该薄膜电阻器至少包含铬，硅和氮，并且形成在具有特定比例的化学成分的基板上，该半导体器件具有使其由于温度导致的电阻值的变化的特性 可以有效地抑制变化。

公开(公告)号：US5918982A

公开(公告)日：1999-07-06

申请号：US927182

申请日：1997-09-11

申请人： Junichi Nagata ,  Junji Hayakawa ,  Hiroyuki Ban

发明人： Junichi Nagata ,  Junji Hayakawa ,  Hiroyuki Ban

IPC分类号： G01K7/01 ,  G01R19/165 ,  G05F3/02 ,  H02H5/04 ,  H02H7/20 ,  G01K7/00

CPC分类号： G01K7/01

摘要： A temperature detecting circuit detects the rise of ambient temperature, using a forward voltage drop across a diode. The temperature detecting circuit comprises a temperature detecting diode whose cathode is grounded, a first constant current supply device connected with the anode of the temperature detecting diode, for supplying a constant current Ia to the temperature-detecting diode, a rectifying diode whose cathode is connected with the anode of the temperature detecting diode, a second constant current supply device connected with the anode of the rectifying diode, for supplying a constant current Ib to the temperature-detecting diode, a comparator, and a transistor. When the voltage at the anode of the temperature-detecting diode is lower than a reference voltage, the comparator produces a high-level signal indicative of overheating. In response to this, the transistor shorts the anode of the rectifying diode to ground potential to supply the constant current Ib from the second constant current supply device directly to ground potential.

摘要翻译： 温度检测电路使用二极管两端的正向压降来检测环境温度的上升。 温度检测电路包括阴极接地的温度检测二极管，与温度检测二极管的阳极连接的第一恒流源装置，用于向温度检测二极管提供恒定电流Ia;其阴极连接的整流二极管 与温度检测二极管的阳极连接的第二恒流源装置与整流二极管的阳极连接，用于向温度检测二极管提供恒定电流Ib，比较器和晶体管。 当温度检测二极管的阳极电压低于参考电压时，比较器产生指示过热的高电平信号。 响应于此，晶体管将整流二极管的阳极短路到地电位，以将恒定电流Ib从第二恒定电流供应装置直接提供给地电位。

公开(公告)号：US5563486A

公开(公告)日：1996-10-08

申请号：US362933

申请日：1994-12-23

申请人： Tomohisa Yamamoto ,  Junji Hayakawa ,  Hiroyuki Ban ,  Tukasa Miyake ,  Masami Kataoka

发明人： Tomohisa Yamamoto ,  Junji Hayakawa ,  Hiroyuki Ban ,  Tukasa Miyake ,  Masami Kataoka

IPC分类号： H02P8/12 ,  G01C22/02 ,  H02P8/18 ,  H02P8/22 ,  H02P8/32 ,  H02P8/14 ,  G01C22/00

CPC分类号： H02P8/18 ,  G01C22/02 ,  H02P8/32

摘要： A driving circuit of a pulse motor for use in a vehicle odometer is provided. The driving circuit includes a pulse source for providing drive pulses, in sequence, to a plurality of phase coils of the pulse motor, and a wave-shaper for shaping leading and trailing edges of each of the drive pulses so as to vary at a given rate in plural steps for noiseless smooth rotation of the pulse motor.

摘要翻译： 提供了一种用于车辆里程表的脉冲电机的驱动电路。 驱动电路包括用于依次提供脉冲电动机的多个相位线圈的驱动脉冲的脉冲源和用于整形每个驱动脉冲的前沿和后沿的波形整形器，以便在给定的 以脉冲电机的无噪声平滑旋转的多个步骤。

公开(公告)号：US20100238632A1

公开(公告)日：2010-09-23

申请号：US12801187

申请日：2010-05-27

申请人： Satoshi Shiraki ,  Akira Yamada ,  Hiroyuki Ban

发明人： Satoshi Shiraki ,  Akira Yamada ,  Hiroyuki Ban

IPC分类号： H05K7/20

CPC分类号： H05K7/1432 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/01046 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

摘要翻译： 负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。 输出功率器件和驱动IC安装在第一电极基板上。 在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

公开(公告)号：US20090127605A1

公开(公告)日：2009-05-21

申请号：US12010111

申请日：2008-01-22

申请人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

发明人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

IPC分类号： H01L29/66 ,  H01L21/66

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

摘要翻译： 半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。 每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。 每个电阻元件包括设置在两侧的电阻垫。 每个电容元件包括设置在两侧的电容焊盘。 除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。 第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。 第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

公开(公告)号：US20060289461A1

公开(公告)日：2006-12-28

申请号：US11453028

申请日：2006-06-15

申请人： Akio Kojima ,  Hiroyuki Ban

发明人： Akio Kojima ,  Hiroyuki Ban

IPC分类号： H05B1/02

CPC分类号： G01K3/005 ,  G01K7/01

摘要： An overheat-sensing circuit includes a temperature-sensing circuit for outputting a temperature-sensing voltage, a reference voltage generation circuit for outputting a reference voltage, and a comparison circuit that compares the temperature-sensing voltage with the reference voltage and outputs an overheat-sensing signal based on a result of the comparison. The reference voltage generation circuit outputs the reference voltage in accordance with a power supply voltage when the power supply voltage is within a predetermined voltage range. In contrast, the reference voltage generation circuit generates a limited voltage based on the power supply voltage and outputs the reference voltage in accordance with the limited voltage when the power supply voltage is outside the predetermined voltage range. This approach reduces a variation in an overheat-sensing temperature at which the comparison circuit outputs the overheat-sensing signal.

摘要翻译： 过热检测电路包括用于输出温度感测电压的温度检测电路，用于输出参考电压的参考电压产生电路，以及将温度感测电压与参考电压进行比较的比较电路，并输出过热 - 基于比较结果的感测信号。 当电源电压在预定电压范围内时，参考电压产生电路根据电源电压输出参考电压。 相比之下，参考电压产生电路基于电源电压产生有限电压，并且当电源电压超出预定电压范围时，根据限制电压输出参考电压。 该方法减少了比较电路输出过热感测信号的过热感应温度的变化。

公开(公告)号：US20050206323A1

公开(公告)日：2005-09-22

申请号：US11053919

申请日：2005-02-10

申请人： Junji Hayakawa ,  Hiroyuki Ban ,  Jyunichi Nagata

发明人： Junji Hayakawa ,  Hiroyuki Ban ,  Jyunichi Nagata

IPC分类号： G05F1/56 ,  H02M3/155 ,  H02M3/158 ,  H05B37/02

CPC分类号： H02M3/158 ,  H02M2001/0045 ,  H02M2001/0048 ,  H02M2001/007 ,  Y02B70/1491

摘要： In a power supply apparatus, a switching circuit selectively applies one of an input voltage of a power converting circuit and an output voltage of the power converting circuit to a voltage reducing power supply circuit. When the input voltage is applied to the power converting circuit, the switching circuit selects this input voltage, so that the output voltage of the voltage reducing power supply circuit can quickly rise. Thereafter, when the output voltage of the power converting circuit exceeds this output voltage, the switching circuit selects the output voltage of the power converting circuit. As a result, a difference between the input voltage and the output voltage of the voltage reducing power supply circuit is decreased. Thus, a power loss is lowered and noise produced in the power converting circuit is suppressed.

摘要翻译： 在电源装置中，开关电路将功率转换电路的输入电压和电力转换电路的输出电压中的一个选择性地施加到降压电源电路。 当输入电压施加到功率转换电路时，开关电路选择该输入电压，使得降压电源电路的输出电压可以快速上升。 此后，当电力转换电路的输出电压超过该输出电压时，开关电路选择电力转换电路的输出电压。 结果，降压电源电路的输入电压和输出电压之间的差减小。 因此，功率损耗降低，功率转换电路产生的噪声被抑制。

公开(公告)号：US06768183B2

公开(公告)日：2004-07-27

申请号：US10125582

申请日：2002-04-19

申请人： Shigeki Takahashi ,  Satoshi Shiraki ,  Hiroaki Himi ,  Hiroyuki Ban ,  Osamu Seya

发明人： Shigeki Takahashi ,  Satoshi Shiraki ,  Hiroaki Himi ,  Hiroyuki Ban ,  Osamu Seya

IPC分类号： H01L2900

CPC分类号： H01L27/0826 ,  H01L27/0623

摘要： An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base region and is formed in an NPN forming region. The PNP bipolar transistor has an n type emitter region, an n type collector region and a p type base region and is formed in a PNP forming region. Only one conductive type burying region is formed in at least one of the NPN forming region and the PNP forming region. A current that flows from the p type emitter region to the n type base region flows in the n type base region in a direction perpendicular to the substrate.

摘要翻译： 在半导体衬底中形成NPN双极晶体管和PNP双极晶体管。 NPN双极晶体管具有p型发射极区域，p型集电极区域和n型基极区域，并且形成在NPN形成区域中。 PNP双极晶体管具有n型发射极区域，n型集电极区域和p型基极区域，并且形成在PNP形成区域中。 在NPN形成区域和PNP形成区域的至少一个中仅形成一个导电型掩埋区域。 从p型发射极区域流向n型基极区域的电流在与基板垂直的方向上流入n型基极区域。