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    Dielectric insulator separated substrate for semiconductor integrated circuits
    21.
    发明授权
    Dielectric insulator separated substrate for semiconductor integrated circuits 失效
    用于半导体集成电路的绝缘体绝缘体分离衬底

    公开(公告)号：US4173674A

    公开(公告)日：1979-11-06

    申请号：US888981

    申请日：1978-03-22

    申请人： Akio Mimura ,  Takaya Suzuki ,  Seturo Yagiyu

    发明人： Akio Mimura ,  Takaya Suzuki ,  Seturo Yagiyu

    IPC分类号： H01L21/762 ,  B32B7/00 ,  B32B9/04 ,  H01L21/304 ,  H01L21/316

    CPC分类号： H01L21/76297 ,  Y10T428/265

    摘要： A dielectric insulator separated substrate comprises a plurality of monocrystalline semiconductor island regions in which circuit elements are to be formed and a support region for supporting the island regions while a dielectric film formed on the supporting region electrically separates the island regions from each other. The supporting region comprises crystalline semiconductor layers and at least one oxygen diffusion preventive film laminated alternately.The extreme outer polycrystalline semiconductor layer of the supporting region is polished to such a thickness as to prevent the substrate from being curved greatly by the wedge action due to the oxygen diffusion. Since the extreme outer polycrystalline semiconductor layer thus polished has a flat surface, the handling of the substrate is easy. The substrate devoid of any curveness deformation assures a highly accurate formation of the circuit elements in the island regions.

    摘要翻译： 介质绝缘体分离衬底包括要形成电路元件的多个单晶半导体岛区域和用于支撑岛区的支撑区域，同时形成在支撑区域上的电介质膜将岛区彼此电分离。 支撑区域包括结晶半导体层和交替层压的至少一个氧扩散防止膜。 支撑区域的极外部多晶半导体层被抛光到这样的厚度，以防止由于氧扩散而产生的楔形作用使衬底大大弯曲。 由于这样抛光的极外部多晶半导体层具有平坦的表面，所以基板的处理容易。 没有任何弯曲变形的基板确保岛状区域中的电路元件的高精度地形成。

    METHOD OF PREPARING HUMAN LUNG TISSUE STEM CELLS AND METHOD OF INDUCING DIFFERENTIATION INTO HUMAN ALVEOLAR EPITHELIAL CELLS
    23.
    发明申请
    METHOD OF PREPARING HUMAN LUNG TISSUE STEM CELLS AND METHOD OF INDUCING DIFFERENTIATION INTO HUMAN ALVEOLAR EPITHELIAL CELLS 审中-公开
    人肺组织干细胞的制备方法及诱导人上皮细胞分化的方法

    公开(公告)号：US20120094304A1

    公开(公告)日：2012-04-19

    申请号：US13264694

    申请日：2010-04-09

    申请人： Hiroshi Kubo ,  Naoya Fujino ,  Takaya Suzuki ,  Mutsuo Yamaya

    发明人： Hiroshi Kubo ,  Naoya Fujino ,  Takaya Suzuki ,  Mutsuo Yamaya

    IPC分类号： C12N5/071 ,  G01N21/64 ,  C12Q1/02

    CPC分类号： A61K35/42 ,  A61K35/12 ,  C12N5/0689 ,  C12N2502/13 ,  G01N2500/10

    摘要： Provided are: a method of preparing cells that simultaneously express a type II alveolar epithelial cell marker and a stem cell marker, including a process of isolating and extracting constituent cells from human lung tissue, and a process of separating and culturing lung tissue stem cells from the obtained isolated cells; human lung tissue stem cells that are obtained from the method of preparation and are able to differentiate into alveolar epithelial cells; a method of inducing differentiation into human lung epithelial cells, consisting of culturing the human lung tissue stem cells; human alveolar epithelial cells prepared through the method of inducing differentiation; and a method of screening that uses the human lung tissue stem cells or human alveolar epithelial cells.

    摘要翻译： 提供：一种制备同时表达II型肺泡上皮细胞标志物和干细胞标记物的细胞的方法，包括从人肺组织分离和提取组成细胞的方法，以及从肺组织干细胞分离和培养肺组织干细胞的方法 获得的分离细胞; 人肺组织干细胞，其从制备方法获得并且能够分化成肺泡上皮细胞; 诱导分化为人肺上皮细胞的方法，其包括培养人肺组织干细胞; 通过诱导分化的方法制备人肺泡上皮细胞; 以及使用人肺组织干细胞或人肺泡上皮细胞的筛选方法。

    CARBON FIBER
    24.
    发明申请
    CARBON FIBER 有权
    碳纤维

    公开(公告)号：US20100003186A1

    公开(公告)日：2010-01-07

    申请号：US12166479

    申请日：2008-07-02

    申请人： HIDEKAZU YOSHIKAWA ,  Taro Oyama ,  Takaya Suzuki ,  Harumitsu Enomoto

    发明人： HIDEKAZU YOSHIKAWA ,  Taro Oyama ,  Takaya Suzuki ,  Harumitsu Enomoto

    IPC分类号： D01F9/12

    CPC分类号： D01F9/12 ,  D01F9/22

    摘要： According to the present invention, there is disclosed a carbon fiber having a strand tensile strength of 6,100 MPa or more, a strand tensile modulus of 340 GPa or more and a density of 1.76 g/cm3 or more and possessing, on the surface, striations oriented in a direction parallel to the fiber axis, wherein the distance between striations in a 2×2 μm area of the carbon fiber surface when observed by a scanning probe microscope is 0.1 to 0.3 μm, the root mean square surface roughness Rms (5 μm) in a 5×5 μm area of the carbon fiber surface when observed by a scanning probe microscope is 20 to 40 nm, and the root mean square surface roughness Rms (0.5 μm) when measured in a 0.5×0.5 μm area is 2 to 12 nm.

    摘要翻译： 根据本发明，公开了一种具有6,100MPa以上的线股抗拉强度，340GPa以上的线拉伸模量和1.76g / cm 3以上的密度的碳纤维，并且在表面上具有条纹 在平行于纤维轴的方向上定向，其中当通过扫描探针显微镜观察时，碳纤维表面的2x2mum面积中的条纹之间的距离为0.1至0.3μm，根均方根表面粗糙度Rms（5mum） 当通过扫描探针显微镜观察时，碳纤维表面的5×5μm面积为20〜40nm，在0.5×0.5μm面积中测定时的均方根表面粗糙度Rms（0.5μm）为2〜12nm。

    Method of preparing a dielectric-isolated substrate for semiconductor integrated circuitries
    26.
    发明授权
    Method of preparing a dielectric-isolated substrate for semiconductor integrated circuitries 失效
    制备用于半导体集成电路的电介质隔离衬底的方法

    公开(公告)号：US4079506A

    公开(公告)日：1978-03-21

    申请号：US637959

    申请日：1975-12-05

    申请人： Takaya Suzuki ,  Seturoo Yagyuu ,  Akio Mimura

    发明人： Takaya Suzuki ,  Seturoo Yagyuu ,  Akio Mimura

    IPC分类号： H01L21/3205 ,  H01L21/762 ,  H01L23/52 ,  H01L21/304 ,  H01L21/316

    CPC分类号： H01L21/76297 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/097 ,  Y10S148/122 ,  Y10S148/15

    摘要： In the preparation of a dielectric-isolated substrate for semiconductor integrated circuits which comprises a plurality of silicon single crystalline islands in which circuit elements are formed, a region made of an alternate laminate of silicon polycrystalline layers and silicon oxide films for supporting the plurality of silicon single crystalline islands, and a silicon oxide film interposed between the silicon single crystalline islands and the support region for isolating each of the silicon single crystalline islands from the remaining ones and the support region, the formation of three to twelve silicon polycrystalline layers in the support region can remarkably reduce the bending of the substrate resulting from the growth stress of the silicon polycrystalline layers or from the difference in thermal expansion coefficients between the single crystalline silicon and the polycrystalline silicon, and therefore produces a dielectric-isolated substrate showing little bending.

    摘要翻译： 在制备用于半导体集成电路的绝缘隔离衬底的制备中，该衬底包括形成电路元件的多个单晶硅岛，由用于支撑多个硅的多晶硅层和氧化硅膜的交替叠层制成的区域 单晶岛和置于硅单结晶岛和支撑区之间的氧化硅膜，用于隔离其中的每一个单晶岛和支撑区，在载体中形成三至十二个硅多晶层 区域可以显着降低由硅多晶层的生长应力产生的衬底的弯曲或者由单晶硅和多晶硅之间的热膨胀系数的差异，因此产生几乎没有弯曲的介电隔离衬底。

    Semiconductor device and a method of manufacturing the same
    30.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07898032B2

    公开(公告)日：2011-03-01

    申请号：US11672487

    申请日：2007-02-07

    申请人： Takaya Suzuki ,  Takashi Ipposhi

    发明人： Takaya Suzuki ,  Takashi Ipposhi

    IPC分类号： H01L27/12

    CPC分类号： H01L27/0629 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention realizes the miniaturization of a semiconductor device. On a first insulation film, an island-like semiconductor layer and a second insulation film which surrounds the semiconductor layer are formed, and resistance elements (for example, poly-silicon resistance elements) which are formed of a conductive film are arranged to be overlapped to an upper surface of the semiconductor layer in plane.

    摘要翻译： 本发明实现了半导体器件的小型化。 在第一绝缘膜上形成围绕半导体层的岛状半导体层和第二绝缘膜，并且由导电膜形成的电阻元件（例如，多晶硅电阻元件）被布置成重叠 到半导体层的上表面。