公开(公告)号：US20230246132A1

公开(公告)日：2023-08-03

申请号：US18180531

申请日：2023-03-08

Applicant: NGK Insulators, Ltd.

Inventor： Kentaro NONAKA ,  Takayuki HIRAO ,  Katsuhiro IMAI

IPC: H01L33/32 ,  H01L33/02

CPC classification number: H01L33/32 ,  H01L33/025

Abstract: There is provided a large-diameter Group-III element nitride semiconductor substrate including a first surface and a second surface, in which, despite its large diameter, variations in quality in the first surface are suppressed. A Group-III element nitride semiconductor includes: a first surface; and a second surface, wherein the Group-III element nitride semiconductor substrate has a diameter of 100 mm or more, and wherein the Group-III element nitride semiconductor substrate has a coefficient of variation of a yellow luminescence intensity in a range corresponding to 88% or more of an entire region of the first surface of 0.3 or less based on a photoluminescence spectrum obtained through photoluminescence measurement of a range of the entire region of the first surface.

公开(公告)号：US20190242029A1

公开(公告)日：2019-08-08

申请号：US16385380

申请日：2019-04-16

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshinori ISODA ,  Suguru NOGUCHI ,  Tetsuya UCHIKAWA ,  Takayuki HIRAO ,  Takanao SHIMODAIRA ,  Katsuhiro IMAI

IPC: C30B29/40 ,  H01L33/32 ,  H01L33/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B29/38 ,  H01L21/205 ,  H01L33/0075 ,  H01L33/32

Abstract: It is provided a layer of a nitride of a group 13 element having a first main face and second main face. The layer of the nitride of the group 13 element includes a first void-depleted layer provided on the side of the first main face, a second void-depleted layer provided on the side of the second main face, and the void-distributed layer provided between the first void-depleted layer and second void-depleted layer.

公开(公告)号：US20180351041A1

公开(公告)日：2018-12-06

申请号：US16059783

申请日：2018-08-09

Applicant: NGK INSULATORS, LTD.

Inventor： Katsuhiro IMAI ,  Yoshitaka KURAOKA ,  Mikiya ICHIMURA ,  Takayuki HIRAO

IPC: H01L33/32 ,  H01L33/18 ,  H01L33/06

Abstract: A free-standing substrate of a polycrystalline nitride of a group 13 element is composed of a plurality of monocrystalline particles having a particular crystal orientations in approximately a normal direction. The free-standing substrate has a top surface and a bottom surface. The polycrystalline nitride of the group 13 element is gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof and contains zinc at a concentration of 1×1017 atoms/cm3 or more and 1×1020 atoms/cm3 or less.

公开(公告)号：US20180350918A1

公开(公告)日：2018-12-06

申请号：US16059751

申请日：2018-08-09

Applicant: NGK INSULATORS, LTD.

Inventor： Katsuhiro IMAI ,  Yoshitaka KURAOKA ,  Mikiya ICHIMURA ,  Takayuki HIRAO

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/04 ,  H01L29/165 ,  H01L33/32 ,  H01L33/18

Abstract: A free-standing substrate of a polycrystalline nitride of a group 13 element contains a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The polycrystalline nitride of the group 13 element is composed of gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof. The free-standing substrate has a top surface and bottom surface. The free-standing substrate contains at least one of zinc and calcium. A root mean square roughness Rms at the top surface is 3.0 nm or less.

公开(公告)号：US20160172541A1

公开(公告)日：2016-06-16

申请号：US15016722

申请日：2016-02-05

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC: H01L33/32 ,  H01L33/00 ,  C30B29/40 ,  C30B19/12 ,  C30B9/00 ,  C30B25/20 ,  H01L33/16 ,  C30B19/02

CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

公开(公告)号：US20160043261A1

公开(公告)日：2016-02-11

申请号：US14920224

申请日：2015-10-22

Applicant: NGK Insulators, Ltd.

Inventor： Mikiya ICHIMURA ,  Jun YOSHIKAWA ,  Katsuhiro IMAI

IPC: H01L31/077 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/0749

CPC classification number: H01L31/077 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

Abstract: Disclosed is a photovoltaic device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a photovoltaic layer provided on the substrate, and an electrode provided on the photovoltaic layer. According to the present invention, a photovoltaic device having high photoelectric conversion efficiency can be inexpensively provided.

Abstract translation: 公开了一种光电器件，其包括由板状的取向多晶氧化锌烧结体，设置在基板上的光电转换层和设置在该光电转换层上的电极构成的基板。 根据本发明，可以廉价地提供具有高光电转换效率的光电器件。

公开(公告)号：US20150099122A1

公开(公告)日：2015-04-09

申请号：US14570122

申请日：2014-12-15

Applicant: NGK INSULATORS, LTD.

Inventor： Jun YOSHIKAWA ,  Katsuhiro IMAI ,  Koichi KONDO

IPC: C01G9/02

CPC classification number: C01G9/02 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2004/03 ,  C01P2004/20 ,  C01P2004/61 ,  C01P2006/12 ,  Y10T428/2982

Abstract: The present invention provides a zinc oxide powder that enables a high degree of orientation, and highly uniform dispersion of an additive substance, to be simultaneously achieved in a green body or a sintered body. The zinc oxide powder of the present invention comprises a plurality of plate-like zinc oxide particles and has a volume-based D50 average particle diameter of 1 to 5 μm and a specific surface area of 1 to 5 m2/g. The zinc oxide powder has a degree of orientation of the (002) plane of 40% or greater when two-dimensionally arrayed into a monolayer on a substrate.

Abstract translation: 本发明提供一种氧化锌粉末，其能够在生坯体或烧结体中同时实现高取向度，高分散性的添加剂物质的分散。 本发明的氧化锌粉末包含多个板状氧化锌粒子，体积D50平均粒径为1〜5μm，比表面积为1〜5m 2 / g。 氧化锌粉末当二维地排列在基板上的单层中时，（002）面的取向度为40％以上。

公开(公告)号：US20130221490A1

公开(公告)日：2013-08-29

申请号：US13861695

申请日：2013-04-12

Applicant: NGK INSULATORS, LTD.

Inventor： Takanao SHIMODAIRA ,  Takayuki HIRAO ,  Katsuhiro IMAI

IPC: H01L29/20

CPC classification number: H01L29/2003 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract translation: 为了生长氮化镓晶体，首先将晶种衬底浸入含有镓和钠的熔融混合物中。 然后，在含有氮气且不含氧的加压气氛中加热熔融混合物，在晶种基板上生长氮化镓晶体。 此时，在搅拌熔融混合物的第一搅拌条件下，在籽晶基板上生长氮化镓晶体，将第一搅拌条件设定为提供粗糙的生长表面，然后氮化镓晶体在 晶种基材在搅拌熔融混合物的第二搅拌条件下，将第二搅拌条件设定为提供平滑的生长表面。