公开(公告)号：US5453390A

公开(公告)日：1995-09-26

申请号：US38958

申请日：1993-03-29

申请人： Toshiaki Nishizawa ,  Akira Kuroyanagi ,  Tsuyoshi Yamamoto ,  Norihito Tokura

发明人： Toshiaki Nishizawa ,  Akira Kuroyanagi ,  Tsuyoshi Yamamoto ,  Norihito Tokura

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L27/02 ,  H01L27/04 ,  H01L21/266

CPC分类号： H01L29/66712 ,  H01L27/0248 ,  H01L29/7811 ,  H01L29/7815 ,  Y10S148/126

摘要： A power semiconductor device having current detecting function comprising a detection pert that includes the elements of a better reach-through withstand voltage capability than those of a principal current part. The power semiconductor device comprises such elements as DMOS, IGBT or BPT cells. One area of the device acts as the detection part and another as the principal current part. The detection part and the principal current part share as their common electrode a high density substrate having a low density layer of a first conductivity type. The surface of the low density layer carries a principal and a subordinate well region of a second conductivity type each. The surface of the principal well region bears a surface electrode region of the first conductivity type acting as the other electrode of the principal current part; the surface of the subordinate well region carries a surface electrode region of the first conductivity type acting as the other electrode of the detection part. The subordinate well region is made shallower than the principal well region illustratively by use of a mask having narrower apertures through which to form the former region. This causes a reach-through to occur in the principal current part with its well region having a shorter distance to the high density substrate, and not in the detection part with its well region having a longer distance to the substrate.

摘要翻译： 一种具有电流检测功能的功率半导体器件，包括具有比主要电流部分更好的达到耐受电压能力的元件的检测灵敏度。 功率半导体器件包括诸如DMOS，IGBT或BPT单元的元件。 设备的一个区域作为检测部分，另一个作为主要的当前部分。 检测部分和主要电流部分共同作为其公共电极具有第一导电类型的低密度层的高密度基板。 低密度层的表面分别载有第二导电类型的主要和次要的阱区。 主阱区域的表面具有作为主电流部分的另一个电极的第一导电类型的表面电极区域; 下位阱区域的表面带有用作检测部分的另一电极的第一导电类型的表面电极区域。 通过使用具有较窄孔径的掩模来形成下一个井区域使其比主井区域浅，以形成前区域。 这导致在主电流部分中出现通孔，其阱区具有与高密度衬底相距较短的距离，而不在其阱区具有与衬底相距较远的检测部分中。

公开(公告)号：US5365085A

公开(公告)日：1994-11-15

申请号：US735512

申请日：1991-07-29

申请人： Norihito Tokura ,  Tsuyoshi Yamamoto

发明人： Norihito Tokura ,  Tsuyoshi Yamamoto

IPC分类号： G05F1/56 ,  H01L27/02 ,  H01L27/04 ,  H01L29/06 ,  H01L29/78 ,  H01L29/74 ,  H01L31/111 ,  H01L29/00 ,  H01L27/082

CPC分类号： H01L29/7813 ,  H01L27/0248 ,  H01L29/7815

摘要： A power semiconductor device constituted of a MOSFET incorporating a current detecting function for detecting current making use of a voltage drop developed across a channel resistance in which variations in the channel resistance due to its temperature and the gate voltage are compensated for and thereby highly accurate current detection is achieved.

摘要翻译： 一种功率半导体器件，其由具有电流检测功能的MOSFET构成，该MOSFET用于检测利用在沟道电阻上产生的电压降的电流，其中由于其温度和栅极电压导致的沟道电阻的变化被补偿，并由此高精度的电流 实现检测。

公开(公告)号：US5654560A

公开(公告)日：1997-08-05

申请号：US475096

申请日：1995-06-07

申请人： Toshiaki Nishizawa ,  Akira Kuroyanagi ,  Tsuyoshi Yamamoto ,  Norihito Tokura

发明人： Toshiaki Nishizawa ,  Akira Kuroyanagi ,  Tsuyoshi Yamamoto ,  Norihito Tokura

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L27/02 ,  H01L27/04 ,  H01L29/74

CPC分类号： H01L29/66712 ,  H01L27/0248 ,  H01L29/7811 ,  H01L29/7815 ,  Y10S148/126

摘要： A power semiconductor device having a current detecting function comprising a detection part that includes the elements of a better reach-through withstand voltage capability than those of a principal current part. The power semiconductor device comprises such elements as DMOS, IGBT or BPT cells. One area of the device acts as the detection part and another as the principal current part. The detection part and the principal current part share as their common electrode a high density substrate having a low density layer of a first conductivity type. The surface of the low density layer carries a principal and a subordinate well region of a second conductivity type each. The surface of the principal well region bears a surface electrode region of the first conductivity type acting as the other electrode of the principal current part; the surface of the subordinate well region carries a surface electrode region of the first conductivity type acting as the other electrode of the detection part. The subordinate well region is made shallower than the principal well region illustratively by use of a mask having narrower apertures through which to form the former region. This causes a reach-through to occur in the principal current part with its well region having a shorter distance to the high density substrate, and not in the detection part with its well region having a longer distance to the substrate.

摘要翻译： 一种具有电流检测功能的功率半导体器件，包括检测部件，该检测部件包括比主电流部件更好的达到耐受电压能力的元件。 功率半导体器件包括诸如DMOS，IGBT或BPT单元的元件。 设备的一个区域作为检测部分，另一个作为主要的当前部分。 检测部分和主要电流部分共同作为其公共电极具有第一导电类型的低密度层的高密度基板。 低密度层的表面分别载有第二导电类型的主要和次要的阱区。 主阱区域的表面具有作为主电流部分的另一个电极的第一导电类型的表面电极区域; 下位阱区域的表面带有用作检测部分的另一电极的第一导电类型的表面电极区域。 通过使用具有较窄孔径的掩模来形成下一个井区域使其比主井区域浅，以形成前区域。 这导致在主电流部分中出现通孔，其阱区具有与高密度衬底相距较短的距离，而不在其阱区具有与衬底相距较远的检测部分中。

公开(公告)号：US07586151B2

公开(公告)日：2009-09-08

申请号：US11578949

申请日：2005-05-11

申请人： Hidefumi Takaya ,  Yasushi Okura ,  Akira Kuroyanagi ,  Norihito Tokura

发明人： Hidefumi Takaya ,  Yasushi Okura ,  Akira Kuroyanagi ,  Norihito Tokura

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7811

摘要： The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor device 100 includes a cell area through which current flows and an terminal area which surrounds the cell area. The semiconductor device 100 also has a plurality of gate trenches 21 in the cell area and a plurality of terminal trenches 62 in the terminal area. The gate trenches 21 are formed in a striped shape, and the terminal trenches 62 are formed concentrically. In the semiconductor device 100, the gate trenches 21 and the terminal trenches 62 are positioned in a manner that spacings between the ends of the gate trenches 21 and the side of the terminal trench 62 are uniform. That is, the length of the gate trenches 21 is adjusted according to the curvature of the corners of the terminal trench 62.

摘要翻译： 本发明提供了一种绝缘栅半导体器件，其在沟槽底部附近具有浮动区域，并且能够可靠地实现高耐压。 绝缘栅半导体器件100包括电流流过的单元区域和围绕单元区域的端子区域。 半导体器件100还在单元区域中具有多个栅极沟槽21以及端子区域中的多个端子沟槽62。 栅极沟槽21形成为条状，并且端子沟槽62同心地形成。 在半导体器件100中，栅极沟槽21和端子沟槽62以栅极沟槽21的端部和端子沟槽62的侧面之间的间隔均匀的方式定位。 也就是说，栅极沟槽21的长度根据端子沟槽62的拐角的曲率来调节。

公开(公告)号：US20070200138A1

公开(公告)日：2007-08-30

申请号：US11709272

申请日：2007-02-22

申请人： Yoshihiko Ozeki ,  Norihito Tokura ,  Yukio Tsuzuki

发明人： Yoshihiko Ozeki ,  Norihito Tokura ,  Yukio Tsuzuki

IPC分类号： H01L29/74

CPC分类号： H01L27/0611 ,  H01L29/7395 ,  H01L29/8611

摘要： A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.

摘要翻译： 半导体器件包括：半导体衬底; IGBT区域，包括在所述基板的第一表面上的第一区域，并且在所述基板的第二表面上提供沟道形成区域和第二区域，并提供集电体; 二极管区域，包括在第一表面上的第三区域，并在第二表面上提供阳极或阴极和第四区域，并提供阳极或阴极; 外围区域，包括在第一表面上的第五区域和第二表面上的第六区域。 第一，第三和第五区域通常和电耦合，并且第二，第四和第六区域彼此通常电耦合。

公开(公告)号：US6133587A

公开(公告)日：2000-10-17

申请号：US23280

申请日：1998-02-13

申请人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata ,  Takamasa Suzuki ,  Shoichi Onda

发明人： Yuichi Takeuchi ,  Takeshi Miyajima ,  Norihito Tokura ,  Hiroo Fuma ,  Toshio Murata ,  Takamasa Suzuki ,  Shoichi Onda

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/0696

摘要： A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in the p-type silicon carbide semiconductor layer 3. A trench 7 is formed in a predetermined region in the n.sup.+ -type source region 5, which trench 7 passes through the n.sup.+ -type source region 5 and the p-type silicon carbide semiconductor layer 3, reaching the n.sup.- -type silicon carbide semiconductor layer 2. The trench 7 has side walls 7a perpendicular to the surface of the semiconductor substrate 4 and a bottom side 7b parallel to the surface of the semiconductor substrate 4. The hexagonal region surrounded by the side walls 7a of the trench 7 is an island semiconductor region 12. A high-reliability gate insulating film 8 is obtained by forming a gate insulating layer on the side walls 7a which surround the island semiconductor region 12.

摘要翻译： n型源极区5形成在半导体衬底4的p型碳化硅半导体层3的表层部分的预定区域上。低电阻p型碳化硅区6形成在 在p型碳化硅半导体层3中的表层部分的预定区域。沟槽7形成在n +型源极区域5中的预定区域中，沟槽7通过n +型源极区域5，并且 p型碳化硅半导体层3，到达n型碳化硅半导体层2.沟槽7具有垂直于半导体衬底4的表面的侧壁7a和平行于半导体衬底的表面的底侧7b 由沟槽7的侧壁7a包围的六边形区域是岛状半导体区域12.通过在侧壁7a上形成栅极绝缘层，形成高可靠性栅极绝缘膜8， 岛半导体区域12。

公开(公告)号：US6133120A

公开(公告)日：2000-10-17

申请号：US704820

申请日：1996-08-28

申请人： Takeshi Miyajima ,  Norihito Tokura ,  Atsuo Fukumoto ,  Hidemitsu Hayashi

发明人： Takeshi Miyajima ,  Norihito Tokura ,  Atsuo Fukumoto ,  Hidemitsu Hayashi

IPC分类号： H01L21/205 ,  C30B25/00 ,  C30B25/02 ,  H01L21/04 ,  H01L21/20 ,  H01L21/265 ,  H01L21/336 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  C01B31/36

CPC分类号： H01L29/7813 ,  C30B25/00 ,  C30B25/02 ,  C30B29/36 ,  H01L21/0455 ,  H01L29/66068 ,  H01L29/1608 ,  Y10S438/931

摘要： A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.

摘要翻译： 通过在单晶碳化硅中掺杂硼作为受主杂质来提供具有高载流子浓度和活化速率的p型碳化硅半导体。 硼占据单晶碳化硅的晶格中的硅位置。

公开(公告)号：US5519245A

公开(公告)日：1996-05-21

申请号：US56946

申请日：1993-05-05

申请人： Norihito Tokura ,  Naoto Okabe ,  Naohito Kato

发明人： Norihito Tokura ,  Naoto Okabe ,  Naohito Kato

IPC分类号： H01L29/08 ,  H01L29/739 ,  H01L29/80 ,  H01L23/58 ,  H01L29/76 ,  H01L29/861

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L2924/0002

摘要： An insulated gate bipolar transistor has a reverse conducting function built therein. A semiconductor layer of a first conduction type is formed on the side of a drain, a semiconductor layer of a second conduction type for causing conductivity modulation upon carrier injection is formed on the semiconductor layer of the first conduction type, a semiconductor layer of the second conduction type for taking out a reverse conducting current opposite in direction to a drain current is formed in the semiconductor layer of the second conduction type which is electrically connected to a drain electrode, and a semiconductor layer of the second conduction type is formed at or in the vicinity of a pn junction, through which carriers are given and received to cause conductivity modulation, with a high impurity concentration resulting in a path for the reverse conducting current into a pattern not impeding the passage of the carriers. Therefore, the built-in reverse conducting function has a low operating resistance, a large reverse current can be passed, there is no increase in on-resistance, and the turn-off time can be shortened.

摘要翻译： 绝缘栅双极晶体管内置有反向导通功能。 第一导电类型的半导体层形成在漏极侧，在第一导电类型的半导体层上形成用于在载流子注入时引起导电性调制的第二导电类型的半导体层，第二导电类型的半导体层 在与漏电极电连接的第二导电类型的半导体层中形成用于取出与漏电流方向相反的反向导通电流的导通型，并且在第二导电类型的半导体层中形成第二导电类型的半导体层 pn结的附近，赋予和接收载流子以引起电导率调制的pn结附近，杂质浓度高，导致反向导通电流进入不妨碍载流子通过的图案的路径。 因此，内置的反向导通功能具有低的工作电阻，可以通过大的反向电流，导通电阻不增加，并且可以缩短关断时间。

公开(公告)号：US4608958A

公开(公告)日：1986-09-02

申请号：US533812

申请日：1983-09-19

申请人： Yasuyuki Sakakibara ,  Norihito Tokura

发明人： Yasuyuki Sakakibara ,  Norihito Tokura

IPC分类号： F02D41/20 ,  F02D41/40 ,  F02P3/08 ,  F02P7/03 ,  F02P15/10

CPC分类号： F02P7/035 ,  F02D41/2096 ,  F02D41/40 ,  F02P15/10 ,  F02P3/0892 ,  F02D2041/2003 ,  Y02T10/44

摘要： A device for driving a load reactance element, such as a piezoelectric actuator for a fuel injection system, including a series reactance element connected in series with the load reactance element, and a resonance circuit formed by the load reactance and the series reactance. First and second switching elements are connected between the resonance circuit and the power source or ground potential. Each of the first and second switching elements is rendered conductive only during a half cycle of resonance. The directions of the load current flowing through the load reactance element are switchable by making alternately the first and second switching elements conductive.

摘要翻译： 用于驱动负载电抗元件的装置，例如用于燃料喷射系统的压电致动器，包括与负载电抗元件串联连接的串联电抗元件，以及由负载电抗和串联电抗形成的谐振电路。 第一和第二开关元件连接在谐振电路和电源或地电位之间。 第一和第二开关元件中的每一个仅在谐振的半周期期间才导通。 流过负载电抗元件的负载电流的方向可以通过交替地使第一和第二开关元件导通来切换。

公开(公告)号：US4584553A

公开(公告)日：1986-04-22

申请号：US617478

申请日：1984-06-05

申请人： Norihito Tokura ,  Hisasi Kawai

发明人： Norihito Tokura ,  Hisasi Kawai

IPC分类号： H01C7/00 ,  H01C17/23 ,  H01C1/01

CPC分类号： H01C17/23

摘要： A coated layer type resistor device having a first resistor element and a second resistor element. The ratio between the resistances of the first and second resistor elements is selected to be greater than a predetermined ratio. The first resistor element is formed on an insulator substrate and consists of a resistor layer and end conductor electrodes at the ends of the resistor layer, while the second resistor element is formed on the substrate and consists of a resistor layer, end conductor electrodes, and a plurality of intermediate conductors. The distance between adjacent ones of the intermediate conductors and the distance between one of the end conductor electrodes and the adjacent intermediate conductor in the second resistor element is equal to the distance between the end conductor electrodes in the first resistor element, so that the temperature coefficient property of the resistance is equal in both the first and second resistor elements.

摘要翻译： 一种具有第一电阻元件和第二电阻元件的涂层型电阻器件。 选择第一和第二电阻元件的电阻之比大于预定的比例。 第一电阻元件形成在绝缘体基板上，由电阻层和电阻层的端部的端部导体电极构成，第二电阻元件形成在基板上，由电阻层，端子导体电极和 多个中间导体。 相邻的中间导体之间的距离和第二电阻元件中的一个端子导体电极与相邻的中间导体之间的距离等于第一电阻元件中端部导体电极之间的距离，使得温度系数 电阻的性质在第一和第二电阻元件两者相等。