公开(公告)号：US06645856B2

公开(公告)日：2003-11-11

申请号：US10170647

申请日：2002-06-14

申请人： Toshihiko Tanaka ,  Norio Hasegawa ,  Tsuneo Terasawa

发明人： Toshihiko Tanaka ,  Norio Hasegawa ,  Tsuneo Terasawa

IPC分类号： H01L2132

CPC分类号： G03F1/32 ,  G03F1/56 ,  Y10S438/946

摘要： A pattern is transferred to a resist film on a wafer by a reduction projection exposure method using a half-tone phase-shift mask in which is formed a half-tone phase-shifter pattern including a thin-film pattern functioning as an attenuator and a resist pattern functioning as the photosensitive composition for phase adjustment. This method improves the accuracy of dimensions of the pattern transferred to the wafer.

摘要翻译： 通过使用半色调相移掩模的缩小投影曝光方法将图案转印到晶片上的抗蚀剂膜，其中形成半色调移相器图形，其包括用作衰减器的薄膜图案和 作为用于相位调整的光敏组合物的抗蚀剂图案。 该方法提高了传送到晶片的图案的尺寸精度。

公开(公告)号：US06548312B1

公开(公告)日：2003-04-15

申请号：US09640721

申请日：2000-08-18

申请人： Katsuya Hayano ,  Norio Hasegawa ,  Akira Imai ,  Naoko Asai ,  Eiji Tsujimoto ,  Takahiro Watanabe

发明人： Katsuya Hayano ,  Norio Hasegawa ,  Akira Imai ,  Naoko Asai ,  Eiji Tsujimoto ,  Takahiro Watanabe

IPC分类号： H01L2100

CPC分类号： G03F7/70433

摘要： In order to inhibit or prevent a pattern abnormality such as the deformation or misalignment of a pattern of a semiconductor integrated circuit device, a light intensity is calculated based on the pattern data DBP of a mask and the aberration data DBL of a lens of a pattern exposure device (step 101) and then the results of the light intensity calculation is compared with the results of the light intensity calculated on condition that the lens of the pattern exposure device has no aberration (step 102), and then a pattern data exceeding an allowable level, of the pattern data of the mask, is corrected according to the amount of correction calculated on the basis of the results of the comparison such that the pattern data does not exceed the allowable level (step 104). The mask is manufactured by using the mask making data DBM after the correction and then is mounted on the pattern exposure device to transfer a predetermined pattern to a semiconductor wafer.

摘要翻译： 为了抑制或防止诸如半导体集成电路器件的图案的变形或未对准的图案异常，基于掩模的图案数据DBP和图案的透镜的像差数据DBL计算光强度 曝光装置（步骤101），然后将光强度计算的结果与在图案曝光装置的透镜没有像差的条件下计算的光强度的结果进行比较（步骤102），然后模式数据超过 根据比较结果计算出的校正量，使图案数据不超过允许值（步骤104），对掩模的图案数据的允许电平进行校正。 通过在校正后使用掩模制作数据DBM来制造掩模，然后安装在图案曝光装置上以将预定图案转印到半导体晶片。

公开(公告)号：US6013398A

公开(公告)日：2000-01-11

申请号：US188368

申请日：1998-11-10

申请人： Norio Hasegawa ,  Fumio Murai ,  Katsuya Hayano

发明人： Norio Hasegawa ,  Fumio Murai ,  Katsuya Hayano

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/29 ,  G03F1/32 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/29 ,  G03F7/70066 ,  G03F7/2022

摘要： A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.

公开(公告)号：US5323635A

公开(公告)日：1994-06-28

申请号：US68670

申请日：1993-05-28

申请人： Sadayasu Ueno ,  Takao Sasayama ,  Seiko Suzuki ,  Kanemasa Sato ,  Shiro Ouchi ,  Naoki Minami ,  Norio Hasegawa

发明人： Sadayasu Ueno ,  Takao Sasayama ,  Seiko Suzuki ,  Kanemasa Sato ,  Shiro Ouchi ,  Naoki Minami ,  Norio Hasegawa

IPC分类号： F02B1/04 ,  F02D41/14 ,  F02D41/24 ,  G01N27/419

CPC分类号： F02D41/2474 ,  F02D41/1493 ,  F02D41/2441 ,  F02B1/04 ,  F02D2200/703 ,  F02D41/1456 ,  F02D41/2454

摘要： An air fuel ratio detecting arrangement using a diffusion suppressing type air fuel ratio sensor applicable to an air fuel ratio control unit for an internal combustion engine incorporating an atmospheric air pressure correction circuit in a signal processing and outputting device for correcting an output voltage signal processed therein based on a change in atmospheric air pressure which is detected when a predetermined operating condition of an internal combustion engine is satisfied. A secular change correction circuit included in the signal processing and outputting device detects a change in electromotive force of a concentration cell portion of the air fuel ratio sensor when a predetermined rich air fuel ratio is reached and corrects a reference voltage for the air fuel ratio sensor based on the detected change in electromotive force of the concentration cell portion in addition to an air calibration circuit.

摘要翻译： 一种空气燃料比检测装置，其使用扩散抑制型空燃比传感器，其适用于在内置有大气压力校正电路的内燃机的空燃比控制单元，该信号处理和输出装置用于校正其中处理的输出电压信号 基于当满足内燃机的预定操作条件时检测到的大气压力的变化。 包括在信号处理和输出装置中的长期变化校正电路在达到预定的浓空气燃料比时检测空燃比传感器的浓缩池部分的电动势的变化，并校正空燃比传感器的参考电压 基于除了空气校准电路之外的所检测到的浓度单元部分的电动势的变化。

公开(公告)号：US4904569A

公开(公告)日：1990-02-27

申请号：US144065

申请日：1988-01-15

申请人： Hiroshi Fukuda ,  Norio Hasegawa ,  Toshihiko Tanaka ,  Toshiei Kurosaki ,  Saburo Nonogaki ,  Yoshio Taniguchi ,  Toshiharu Matsuzawa

发明人： Hiroshi Fukuda ,  Norio Hasegawa ,  Toshihiko Tanaka ,  Toshiei Kurosaki ,  Saburo Nonogaki ,  Yoshio Taniguchi ,  Toshiharu Matsuzawa

IPC分类号： G03F7/20

CPC分类号： G03F7/70575 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70333 ,  G03F7/70858

摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is made very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.

摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像平面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作使得光致抗蚀剂膜上的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。

公开(公告)号：US20140302679A1

公开(公告)日：2014-10-09

申请号：US14350314

申请日：2012-09-13

申请人： Kazuyuki Kakuta ,  Toshihiko Onozuka ,  Shigeru Matsui ,  Yoshisada Ebata ,  Norio Hasegawa

发明人： Kazuyuki Kakuta ,  Toshihiko Onozuka ,  Shigeru Matsui ,  Yoshisada Ebata ,  Norio Hasegawa

IPC分类号： H01L21/3065 ,  G03F1/26 ,  H01L21/308

CPC分类号： H01L21/3065 ,  G03F1/0046 ,  G03F1/26 ,  G03F1/28 ,  G03F1/30 ,  H01L21/3085

摘要： A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.

摘要翻译： 通过使用相移掩模形成非对称图案的技术，以及制造衍射光栅和半导体器件的技术，能够提高产品的精度并能缩短制造时间。 在通过使用相移掩模（其中周期性地布置有遮光部分和透光部分）制造衍射光栅的方法中，从照明光源发射的光透射穿过相移掩模，并且光致抗蚀剂在 通过提供由通过该相移掩模的透射产生的零衍射级光和正的第一衍射级光之间的干涉而暴露于Si晶片的表面到Si晶片的表面上的衍射光栅和具有闪耀十字 在Si晶片上形成截面形状。

公开(公告)号：US20120267528A1

公开(公告)日：2012-10-25

申请号：US13518706

申请日：2010-12-01

申请人： Kei Sakai ,  Yafeng Zhang ,  Norio Hasegawa

发明人： Kei Sakai ,  Yafeng Zhang ,  Norio Hasegawa

IPC分类号： H01J37/28

CPC分类号： G03F7/70466 ,  G01B2210/56 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J2237/2817

摘要： A pattern measuring apparatus which can identify a kind of gaps formed by a manufacturing process having a plurality of exposing steps such as SADP, particularly, which can suitably access a gap even if a sample has the gap that is not easily accessed is disclosed. A feature amount regarding one end side of a pattern having a plurality of patterns arranged therein and a plurality of kinds of feature amounts regarding the other end side of the pattern are extracted from a signal detected on the basis of scanning of a charged particle beam. With respect to proper kinds of feature amounts among the plurality of kinds of feature amounts, the feature amount on one side of the pattern and that on the other end side of the pattern are compared. On the basis of the comparison, the kinds of spaces among the patterns are determined.

摘要翻译： 公开了一种图案测量装置，其可以识别由具有多个曝光步骤的制造工艺形成的间隙，例如SADP，特别是即使样品具有不容易接近的间隙也能适当地接近间隙。 从基于扫描带电粒子束检测的信号中提取关于其中布置有多个图案的图案的一端侧的特征量和关于图案的另一端的多种特征量。 对于多种特征量中的适当种类的特征量，比较图案的一侧的特征量和图案的另一端的特征量。 在比较的基础上，确定了图案间的空间种类。

公开(公告)号：US20120151428A1

公开(公告)日：2012-06-14

申请号：US13390354

申请日：2010-07-15

申请人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

发明人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

IPC分类号： G06F17/50

CPC分类号： G01B15/04 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

摘要翻译： 本发明旨在提出一种库创建方法和图案形状估计方法，其中当基于实际波形和库之间的比较来估计形状时，可以适当地估计形状。 作为实现该目的的说明性实施例，提出了通过参照库来选择图案的方法，通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法，以及方法 用于选择存储在库中的图案形状。

公开(公告)号：US20070155052A1

公开(公告)日：2007-07-05

申请号：US11714837

申请日：2007-03-07

申请人： Tsuneo Terasawa ,  Toshihiko Tanaka ,  Ko Miyazaki ,  Norio Hasegawa ,  Kazutaka Mori

发明人： Tsuneo Terasawa ,  Toshihiko Tanaka ,  Ko Miyazaki ,  Norio Hasegawa ,  Kazutaka Mori

IPC分类号： H01L21/58

CPC分类号： G03F7/70425 ,  G03F1/00 ,  G03F1/56 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/15311 ,  Y10S438/944 ,  Y10S438/946 ,  H01L2924/00

摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

公开(公告)号：US20060189282A1

公开(公告)日：2006-08-24

申请号：US10532338

申请日：2003-10-20

申请人： Norio Hasegawa ,  Tetsuhiko Miyatani ,  Hisashi Kawai ,  Masami Yoshida ,  Jun Watanabe

发明人： Norio Hasegawa ,  Tetsuhiko Miyatani ,  Hisashi Kawai ,  Masami Yoshida ,  Jun Watanabe

IPC分类号： H04B1/04 ,  H01Q11/12

CPC分类号： H04L27/2614

摘要： A transmitter for averagedly suppressing the variation in input level of an amplifier according to variation in carrier level. The transmitter comprises an input power calculation section (16) for calculating mean input power of each carrier, an output power calculating section (17) for calculating mean output power of each carrier after the carrier band is limited, a monitoring section (18) for identifying a carrier having the maximum mean input power, acquiring the maximum value, acquiring the mean output power of the identified carrier, determining the ratio of the mean input power to the mean output power, and calculating level control information which is the ratio of the ratio determined above to a predetermined expected value, and a signal level adjusting section (15) for adjusting the level of a multicarrier signal by multiplying the level control information outputted from the monitoring section (18).

摘要翻译： 一种发射机，用于根据载波电平的变化平均地抑制放大器输入电平的变化。 发射机包括用于计算每个载波的平均输入功率的输入功率计算部分（16），用于在载波频带被限制之后计算每个载波的平均输出功率的输出功率计算部分（17），用于 识别具有最大平均输入功率的载波，获取最大值，获取所识别的载波的平均输出功率，确定平均输入功率与平均输出功率的比率，以及计算作为平均输入功率的比率的电平控制信息 以及用于通过乘以从监视部分（18）输出的电平控制信息来调整多载波信号的电平的信号电平调节部分（15）。