公开(公告)号：US11217613B2

公开(公告)日：2022-01-04

申请号：US16687660

申请日：2019-11-18

Applicant: OmniVision Technologies, Inc.

Inventor： Bill Phan ,  Yuanliang Liu ,  Duli Mao ,  Seong Yeol Mun ,  Alireza Bonakdar

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

公开(公告)号：US20180366513A1

公开(公告)日：2018-12-20

申请号：US15628304

申请日：2017-06-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao ,  Xianfu Cheng ,  Xin Wang ,  Bill Phan ,  Dyson Tai

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14831 ,  H01L27/14621 ,  H01L27/14868 ,  H04N5/35563 ,  H04N5/3559 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.

公开(公告)号：US10079261B1

公开(公告)日：2018-09-18

申请号：US15680005

申请日：2017-08-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Bill Phan ,  Sing-Chung Hu ,  Gang Chen

IPC: H01L27/146 ,  H01L29/417 ,  H01L21/3215 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L27/14643 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3215 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  H01L29/41783

Abstract: An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.

公开(公告)号：US09818791B1

公开(公告)日：2017-11-14

申请号：US15285408

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Zhiqiang Lin ,  Keiji Mabuchi ,  Gang Chen ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Dajiang Yang

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/235

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H04N5/2355 ,  H04N5/35563 ,  H04N5/37457 ,  H04N5/378

Abstract: A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor material. A thickness of the first semiconductor material proximate to the first photodiode is less than the thickness of the first semiconductor material proximate to the second photodiode. A second plurality of photodiodes is disposed in a second semiconductor material. The second plurality of photodiodes is optically aligned with the first plurality of photodiodes. An interconnect layer is disposed between the first semiconductor material and the second semiconductor material. The interconnect layer includes an optical shield disposed between the second photodiode and a third photodiode included in the second plurality of photodiodes. The optical shield prevents a first portion of image light from reaching the third photodiode.

公开(公告)号：US12289924B2

公开(公告)日：2025-04-29

申请号：US18177494

申请日：2023-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng ,  Bill Phan

IPC: H10F39/18 ,  H01L21/762 ,  H10D30/01 ,  H10D30/62 ,  H10D64/27 ,  H10F39/00

Abstract: An image sensor includes a photodiode disposed in a semiconductor substrate having a first surface and a second surface opposite to the first surface. A floating diffusion is disposed in the semiconductor substrate. A transfer transistor is configured for coupling the photodiode to the floating diffusion. The transfer transistor includes a vertical transfer gate extending a first depth in a depthwise direction from the first surface into the semiconductor substrate. A transistor is coupled to the floating diffusion. The transistor includes: a planar gate disposed proximate to the first surface of the semiconductor substrate; and a plurality of vertical gate electrodes, each extending a respective depth into the semiconductor substrate from the planar gate in the depthwise direction. The respective depth of at least one of the plurality of vertical gate electrodes is the same as the first depth of the vertical transfer gate.

公开(公告)号：US20240105755A1

公开(公告)日：2024-03-28

申请号：US18527841

申请日：2023-12-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Heesoo Kang ,  Bill Phan ,  Seong Yeol Mun

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: SiGe photodiode for crosstalk reduction. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes. The plurality of pixels are configured to receive an incoming light through an illuminated surface of the semiconductor material. Each pixel includes a first photodiode comprising a silicon (Si) material; and a second photodiode having the Si material and a silicon germanium (SiGe) material.

公开(公告)号：US11527569B2

公开(公告)日：2022-12-13

申请号：US16877077

申请日：2020-05-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Keiji Mabuchi ,  Seong Yeol Mun ,  Yuanliang Liu ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/378

Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

公开(公告)号：US11329086B2

公开(公告)日：2022-05-10

申请号：US16729176

申请日：2019-12-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao ,  Alireza Bonakdar

IPC: H01L27/146

Abstract: Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein. A plurality of pixel isolators is formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs. A passivation layer is disposed on the substrate material and a buffer layer is disposed on the passivation layer. A plurality of first metal elements is disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators, and a plurality of second metal elements is disposed over the plurality of first metal elements.

公开(公告)号：US11233080B2

公开(公告)日：2022-01-25

申请号：US16730137

申请日：2019-12-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao

IPC: H01L27/146

Abstract: A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer. The attenuation layer partially encapsulates the first photodiode by extending laterally from the first deep trench isolation region to the second deep trench isolation region between the semiconductor material and the buffer oxide layer.

公开(公告)号：US20220013554A1

公开(公告)日：2022-01-13

申请号：US16946839

申请日：2020-07-08

Applicant: OmniVision Technologies, Inc.

Inventor： Seong Yeol Mun ,  Bill Phan

IPC: H01L27/146

Abstract: Examples of the disclosed subject matter propose disposing deep trench isolation structure around the perimeter of the pixel transistor region of the pixel cell. In some example embodiments, the deep trench isolation structure extends into the semiconductor substrate from the back side of the semiconductor substrate and abuts against or contacts the bottom of shallow trench isolation structure disposed in the front side of the semiconductor substrate. Together, the trench isolating structure isolates the transistor channel of the pixel transistor region. The formation and arrangement of the trench isolation structure in the pixel transistor region forms a floating doped well region, such as a floating P-doped well region (P-well), containing a floating diffusion (FD) and source/drains (e.g., (N) doped regions) of the pixel transistors. This floating P-well region aims to reduce junction leakage associated with the floating diffusion region of the pixel cell.