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    Semiconductor laser diode
    21.
    发明授权
    Semiconductor laser diode 有权

    公开(公告)号：US11336078B2

    公开(公告)日：2022-05-17

    申请号：US16611372

    申请日：2018-06-08

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

    IPC: H01S5/22 ,  H01S5/32 ,  H01S5/042 ,  H01S5/323

    Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

    Semiconductor laser arrangement and projector
    23.
    发明授权
    Semiconductor laser arrangement and projector 有权

    公开(公告)号：US10270225B2

    公开(公告)日：2019-04-23

    申请号：US15773162

    申请日：2016-11-02

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler ,  André Somers

    IPC: H01S5/00 ,  H01S5/40 ,  H01S5/20 ,  H01S5/10 ,  H01S5/022 ,  H01S5/026 ,  H01S5/343 ,  H01S5/323 ,  H01S5/028 ,  H01S5/42

    Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.

    SEMICONDUCTOR LASER DIODE
    27.
    发明申请
    SEMICONDUCTOR LASER DIODE 审中-公开

    公开(公告)号：US20200321749A1

    公开(公告)日：2020-10-08

    申请号：US16318084

    申请日：2017-07-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

    IPC: H01S5/10 ,  H01S5/22

    Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

    Semiconductor light source
    29.
    发明授权
    Semiconductor light source 有权

    公开(公告)号：US10361534B2

    公开(公告)日：2019-07-23

    申请号：US16069674

    申请日：2017-02-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler

    IPC: H01S5/022 ,  G02B26/00 ,  H01S5/323 ,  H01S3/00 ,  H01S5/026 ,  H01S5/40

    Abstract: A semiconductor light source is disclosed. In an embodiment a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one coupling-out element comprising a continuous base region and rigid light guide columns extending away from the base region, the light guide columns acting as waveguides for the primary radiation, wherein the primary radiation is irradiated into the base region during operation, is led through the base region to the light guide columns and is directionally emitted from the light guide columns so that an intensity half-value angle of the emitted primary radiation is at most 90°.

    Edge-Emitting Semiconductor Laser
    30.
    发明申请
    Edge-Emitting Semiconductor Laser 有权

    公开(公告)号：US20190173264A1

    公开(公告)日：2019-06-06

    申请号：US16092495

    申请日：2017-03-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Bernhard Stojetz ,  Georg Brüderl

    IPC: H01S5/32 ,  H01S5/042 ,  H01S5/323 ,  H01S5/22

    Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.

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