Optoelectronic sensor module and method for producing an optoelectronic sensor module

    公开(公告)号:US11596333B2

    公开(公告)日:2023-03-07

    申请号:US16604083

    申请日:2018-05-03

    Inventor: Luca Haiberger

    Abstract: An optoelectronic sensor module and a method for producing an optoelectronic sensor module are disclosed. In an embodiment an optoelectronic sensor module includes a first semiconductor transmitter chip configured to emit radiation of a first wavelength, a second semiconductor transmitter chip configured to emit radiation of a second wavelength different from the first wavelength, a semiconductor detector chip configured to detect the radiation of the first and second wavelengths, and a first potting body being opaque to the radiation of the first and the second wavelength, wherein the first potting body directly covers side surfaces of the chips and mechanically connects the chips located in a common plane to one another, wherein a distance between the chips is less than or equal to twice an average diagonal length of the chips, and wherein the sensor module is adapted to rest against a body part to be examined.

    Optoelectronic component, optoelectronic device, flashlight and headlight

    公开(公告)号:US11482512B2

    公开(公告)日:2022-10-25

    申请号:US16279108

    申请日:2019-02-19

    Inventor: Luca Haiberger

    Abstract: An optoelectronic component includes an optoelectronic semiconductor chip that generates primary radiation during intended operation of the semiconductor chip, which primary radiation is coupled out via an emission side of the semiconductor chip, an optical element on the emission side and including a plurality of transmission fields arranged laterally side by side, wherein each transmission field is individually and independently electrically controllable, the transmission fields each include an electrochromic material, the transmission fields are such that, by electrically driving a transmission field, the transmittance of the electrochromic material for a radiation coming from the direction of the semiconductor chip during operation is changed and transmittance of the optical element in the region of the respective transmission field is changed for the respective radiation.

    Optoelectronic Sensor Arrangement and Optical Measuring Method

    公开(公告)号:US20220102562A1

    公开(公告)日:2022-03-31

    申请号:US17425596

    申请日:2020-01-29

    Abstract: In an embodiment an optoelectronic sensor arrangement includes a carrier substrate, an illuminating device, a frequency-selective optical element and a photodetector, wherein the illuminating device and the photodetector form a stacked arrangement on or with the carrier substrate, wherein the frequency-selective optical element is arranged between the illuminating device and the photodetector, wherein the photodetector is arranged in a cavity of the carrier substrate which is covered by the illuminating device and/or the frequency-selective optical element, and wherein the frequency-selective optical element includes a divider mirror and an optical filter.

    OPTOELECTRONIC COMPONENT, OPTOELECTRONIC DEVICE, FLASHLIGHT AND HEADLIGHT

    公开(公告)号:US20190259738A1

    公开(公告)日:2019-08-22

    申请号:US16279108

    申请日:2019-02-19

    Inventor: Luca Haiberger

    Abstract: An optoelectronic component includes an optoelectronic semiconductor chip that generates primary radiation during intended operation of the semiconductor chip, which primary radiation is coupled out via an emission side of the semiconductor chip, an optical element on the emission side and including a plurality of transmission fields arranged laterally side by side, wherein each transmission field is individually and independently electrically controllable, the transmission fields each include an electrochromic material, the transmission fields are such that, by electrically driving a transmission field, the transmittance of the electrochromic material for a radiation coming from the direction of the semiconductor chip during operation is changed and transmittance of the optical element in the region of the respective transmission field is changed for the respective radiation.

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