公开(公告)号：US20060261126A1

公开(公告)日：2006-11-23

申请号：US11402407

申请日：2006-04-11

申请人： Ulrich Schiestl ,  Peter Stauss

发明人： Ulrich Schiestl ,  Peter Stauss

IPC分类号： B25C5/06

CPC分类号： B25C1/06

摘要： A drive-in tool (10) for driving in fastening elements (60) includes a driving ram (13) which is displaceably supported in a guide (12), a drive unit (30 for the driving ram (13) and having at least one drive flywheel (32) which is set in rotation by an electric motor (31), and a return device (70) for displacing the driving ram (13) its initial position (22) after the completion of the drive-in process and having a return motor (71) connected with the driving ram (13) by a return mechanism.

摘要翻译： 用于在紧固元件（60）中驱动的驱动工具（10）包括可移动地支撑在引导件（12）中的驱动冲头（13），用于驱动冲头（13）的驱动单元（30），并且至少具有 一个由电动机（31）旋转设置的一个驱动飞轮（32），以及用于在驱动完成之后将驱动压头（13）移动到其起始位置（22）的返回装置（70），以及 具有通过返回机构与驱动压头（13）连接的回位电动机（71）。

公开(公告)号：US20060003467A1

公开(公告)日：2006-01-05

申请号：US10524186

申请日：2003-08-21

申请人： Christian Karnutsch ,  Peter Stauss ,  Klaus Streubei

发明人： Christian Karnutsch ,  Peter Stauss ,  Klaus Streubei

IPC分类号： H01L21/00

CPC分类号： H01L33/30 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/0262 ,  H01L33/0066

摘要： In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1-y)1-xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.

摘要翻译： 在制造基于AlGaInP的发射辐射半导体芯片的方法中，包括准备衬底的方法步骤，向衬底施加包括发光有源层的半导体层序列，并施加透明去耦层，其包括（Ga < 其中0.8 <= x和0≤y其中， <= 1，根据本发明提供的是，衬底由锗制成并且透明去耦层在低温下被施加。

公开(公告)号：US20140342484A1

公开(公告)日：2014-11-20

申请号：US14344825

申请日：2012-08-28

申请人： Joachim Hertkorn ,  Karl Engl ,  Berthold Hahn ,  Andreas Weimar ,  Peter Stauss

发明人： Joachim Hertkorn ,  Karl Engl ,  Berthold Hahn ,  Andreas Weimar ,  Peter Stauss

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  C23C14/0617 ,  C30B23/02 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2924/00

摘要： A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer.

摘要翻译： 一种制造半导体芯片的方法包括提供硅生长衬底，通过溅射在生长衬底上产生III族氮化物缓冲层，以及在缓冲层上方生长具有活性层的III族氮化物半导体层序列。

公开(公告)号：US08851352B2

公开(公告)日：2014-10-07

申请号：US11655327

申请日：2007-01-19

申请人： Rolf Erhardt ,  Peter Stauss ,  Dierk Tille

发明人： Rolf Erhardt ,  Peter Stauss ,  Dierk Tille

IPC分类号： B25C1/18 ,  B25C1/00

CPC分类号： B25C1/008

摘要： A setting tool for driving a fastening element in a constructional component includes a housing (11), a drive member (13) displaceable in a guide (12) located in the housing, a bolt guide (15) adjoining the drive member guide (12) in direction of the operational axis (A) and forming a dog point (16) for abutting the constructional component and a drive-in depth setting tool (20) for displacing the bolt guide (15) axially relative to the drive member guide (15) for setting a distance between a drive end (14) of the drive member (13) and the dog point (16) in the initial position of the drive member.

摘要翻译： 用于驱动结构部件中的紧固元件的固定工具包括壳体（11），可位于壳体中的引导件（12）中移动的驱动构件（13），邻近驱动构件引导件（12）的螺栓引导件 ），并且形成用于邻接结构部件的锁定点（16）和用于相对于驱动构件引导件轴向移动螺栓引导件（15）的驱动深度设置工具（20） 15），用于在驱动构件的初始位置设定驱动构件（13）的驱动端（14）与限位点（16）之间的距离。

公开(公告)号：US20130214285A1

公开(公告)日：2013-08-22

申请号：US13819219

申请日：2011-08-11

申请人： Peter Stauss ,  Joachim Hertkorn ,  Philipp Drechsel

发明人： Peter Stauss ,  Joachim Hertkorn ,  Philipp Drechsel

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： A semiconductor component has a semiconductor layer sequence made of a nitridic composite semiconductor material on a substrate. The substrate includes a silicon surface facing the semiconductor layer sequence. The semiconductor layer sequence includes an active region and at least one intermediate layer made of an oxygen-doped AN composite semiconductor material between the substrate and the active region.

摘要翻译： 半导体部件具有由基板上的氮化复合半导体材料构成的半导体层序列。 衬底包括面向半导体层序列的硅表面。 半导体层序列包括有源区和在衬底和有源区之间由氧掺杂的AN复合半导体材料制成的至少一个中间层。

公开(公告)号：US20130065342A1

公开(公告)日：2013-03-14

申请号：US13499232

申请日：2010-09-28

申请人： Peter Stauss ,  Philipp Drechsel

发明人： Peter Stauss ,  Philipp Drechsel

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639

摘要： A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

摘要翻译： 提供了一种制造发光二极管的方法。 载体衬底具有硅表面。 在硅表面上沿生长方向沉积一系列层，并且在一系列层上沉积发光二极管结构。 该系列层包括由氮化镓形成的GaN层。 一系列层包括由氮化硅形成的掩模层。 掩模层在生长方向上遵循GaN层的至少一部分。

公开(公告)号：US08173991B2

公开(公告)日：2012-05-08

申请号：US12680463

申请日：2008-09-12

申请人： Peter Stauss ,  Matthias Peter ,  Alexander Walter

发明人： Peter Stauss ,  Matthias Peter ,  Alexander Walter

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3086 ,  H01S5/34 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.

摘要翻译： 规定了一种光电子半导体芯片，其具有包含多个量子阱结构的活动区域（20），所述有源区域包括多个连续量子阱层（210,220,230），所述有源区域包括用于产生电磁辐射的多量子阱结构。 多量子阱结构包括至少一个第一量子阱层（210），其被n导电掺杂并且布置在邻接第一量子阱层的两个n导电掺杂阻挡层（250）之间。 它包括未掺杂的第二量子阱层（220），并且被布置在邻接第二量子阱层的两个势垒层（250,260）之间，其中一个是n导电掺杂的，另一个是未掺杂的。 另外，多量子阱结构包括至少一个未掺杂的第三量子阱层（230），其布置在与第三量子阱层相邻的两个未掺杂的势垒层（260）之间。

公开(公告)号：US07325711B2

公开(公告)日：2008-02-05

申请号：US11402407

申请日：2006-04-11

申请人： Ulrich Schiestl ,  Peter Stauss

发明人： Ulrich Schiestl ,  Peter Stauss

IPC分类号： B25C5/06

CPC分类号： B25C1/06

摘要： A drive-in tool drives in fastening elements and includes a driving ram and a drive unit. The driving ram is displaceably supported in a guide. The drive unit has a drive flywheel and a return device. The drive flywheel is set in rotation by an electric motor, and the return device displaces the driving ram from an initial position after the completion of the drive-in process. The return device has a return motor separate from the electric motor, and the return motor is connected to the driving ram by a return mechanism.

摘要翻译： 驱动工具驱动紧固元件，并包括驱动柱塞和驱动单元。 驱动柱塞可移动地支撑在导向件中。 驱动单元有一个驱动飞轮和一个返回装置。 驱动飞轮通过电动机旋转设置，并且返回装置在驱动完成之后将驱动柱塞从初始位置移位。 返回装置具有与电动机分离的返回电动机，并且返回电动机通过返回机构连接到驱动柱塞。

公开(公告)号：US07284511B2

公开(公告)日：2007-10-23

申请号：US11591045

申请日：2006-10-31

申请人： Mario Zahner ,  Peter Stauss ,  Rolf Erhardt

发明人： Mario Zahner ,  Peter Stauss ,  Rolf Erhardt

IPC分类号： F02B71/04 ,  F02B71/00

CPC分类号： B25C1/08

摘要： A combustion-engined setting tool for driving fastening elements in a constructional component end including a combustion chamber (13) for combusting a gas mixture, an inlet/outlet device (40) for opening the combustion chamber (13) in its first position and for closing the combustion chamber (13) in its second position and having a valve element for reversibly displacing the inlet/outlet device (40) between its first and second positions, a locking element (37) for locking the valve element of the inlet/outlet device (40) in the second position of the device, a trigger (30) for actuating the locking element (37), a release switch (22) for triggering ignition in the combustion chamber (13), an electronic control unit (20) for controlling start of the ignition in the combustion chamber (13), and an initialization switch connected with the control unit (20), the control unit (20) initiating the ignition in the combustion chamber (13) when a time period between switching-on of the initialization switch and switching-on of the release switch (22), which is also connected with the control unit, does not exceed a predetermined set time period.

公开(公告)号：US07242034B2

公开(公告)日：2007-07-10

申请号：US10770693

申请日：2004-02-02

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L29/22

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。