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1.发明申请METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND CORRESPONDING OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开生产光电半导体芯片的方法和相应的光电半导体芯片公开(公告)号：US20140342484A1
公开(公告)日：2014-11-20
申请号：US14344825
申请日：2012-08-28
申请人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar , Peter Stauss
发明人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar , Peter Stauss
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , C23C14/0617 , C30B23/02 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L2924/0002 , H01L2933/0025 , H01L2924/00
摘要： A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer.
摘要翻译： 一种制造半导体芯片的方法包括提供硅生长衬底，通过溅射在生长衬底上产生III族氮化物缓冲层，以及在缓冲层上方生长具有活性层的III族氮化物半导体层序列。
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2.发明申请METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP 有权生产光电半导体芯片和光电子半导体芯片的方法公开(公告)号：US20140346541A1
公开(公告)日：2014-11-27
申请号：US14345852
申请日：2012-08-23
申请人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
发明人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
CPC分类号： H01L33/145 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02631 , H01L21/02664 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.
摘要翻译： 制造光电子半导体芯片的方法包括提供生长衬底，通过溅射在生长衬底上产生III族氮化物成核层，其中生长衬底的材料与成核层的材料不同，以及生长III族氮化物半导体层 序列在成核层上具有活性层。
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3.发明授权Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip 有权光电子半导体芯片和光电子半导体芯片的制造方法公开(公告)号：US09343615B2
公开(公告)日：2016-05-17
申请号：US14345852
申请日：2012-08-23
申请人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
发明人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
IPC分类号： H01L21/00 , H01L33/00 , H01L21/02 , H01L33/22 , H01L33/02 , H01L33/12 , H01L33/24 , H01L33/32
CPC分类号： H01L33/145 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02631 , H01L21/02664 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.
摘要翻译： 制造光电子半导体芯片的方法包括提供生长衬底，通过溅射在生长衬底上产生III族氮化物成核层，其中生长衬底的材料与成核层的材料不同，以及生长III族氮化物半导体层 序列在成核层上具有活性层。
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公开(公告)号：US08526476B2
公开(公告)日：2013-09-03
申请号：US12598747
申请日：2008-04-24
IPC分类号： H01S5/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US20090212307A1
公开(公告)日：2009-08-27
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
摘要翻译： 在具有辐射出射区域（1）的发光二极管芯片和设置在辐射出口区域（1）上的接触结构（2,3,4），并且包括接合焊盘（4）和多个接触腹板 2，3），其被设置用于电流膨胀并且导电连接到焊盘（4），焊盘（4）布置在辐射出口区域（1）的边缘区域中。 发光二极管芯片减少了接触结构（2,3,4）中发射的辐射（23）的吸收。
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6.发明申请公开(公告)号：US20100283073A1
公开(公告)日：2010-11-11
申请号：US12680714
申请日：2008-09-04
CPC分类号： H01L33/38 , H01L33/10 , H01L33/145 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.
摘要翻译： 一种薄膜LED，包括阻挡层（3），位于阻挡层（3）之后的第一镜层（2），在第一镜面层（2）之后的层叠体（5），以及至少一个接触结构 6）后续层叠（5）。 层叠体（5）具有至少一个发射电磁辐射的活性层（5a）。 接触结构（6）设置在辐射出口区域（4）上并且具有接触区域（7）。 第一镜层（2）在与接触结构（6）的接触区域相对的区域中具有大于接触结构（6）的接触面积（7）的切口。 结果，提高了薄膜LED的效率。
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公开(公告)号：US08866175B2
公开(公告)日：2014-10-21
申请号：US13821554
申请日：2011-08-22
申请人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
发明人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
CPC分类号： H01L33/62 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 镜层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。
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公开(公告)号：US20130228819A1
公开(公告)日：2013-09-05
申请号：US13821554
申请日：2011-08-22
申请人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
发明人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。
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公开(公告)号：US20100208763A1
公开(公告)日：2010-08-19
申请号：US12598747
申请日：2008-04-24
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US08581279B2
公开(公告)日：2013-11-12
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
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