公开(公告)号：US5113074A

公开(公告)日：1992-05-12

申请号：US647509

申请日：1991-01-29

申请人： Piero Sferlazzo

发明人： Piero Sferlazzo

IPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/02 ,  H01J37/04 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/026 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24455 ,  H01J2237/2449 ,  H01J2237/24585

摘要： A sensor positioned relative to an ion beam for use in an ion implantation system for doping semiconductor wafers. The sensor allows relatively accurate determination of ion beam potential so that steps can be taken to minimize this potential. In a preferred design, a number of electrodes are positioned relative the ion beam and biased at control voltages which allow the ion beam potential to be determined. In one embodiment, the ion beam potential is used to control injection of neutralizing electrons into the ion beam.

摘要翻译： 相对于离子束定位的传感器用于用于掺杂半导体晶片的离子注入系统。 传感器允许相对精确地确定离子束电位，从而可以采取步骤以使该电位最小化。 在优选的设计中，多个电极相对于离子束定位，并在允许确定离子束电位的控制电压下被偏置。 在一个实施例中，离子束电位用于控制将中和电子注入到离子束中。

公开(公告)号：US20160071708A1

公开(公告)日：2016-03-10

申请号：US14941897

申请日：2015-11-16

申请人： Boris L. Druz ,  Piero Sferlazzo ,  Roger P. Fremgen ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss

发明人： Boris L. Druz ,  Piero Sferlazzo ,  Roger P. Fremgen ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/46

CPC分类号： H01J37/3488 ,  C23C14/044 ,  C23C14/221 ,  C23C14/46 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01J37/32752 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/0245 ,  H01J2237/045 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/30472 ,  H01J2237/3146

摘要： Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.

摘要翻译： 用能量粒子束处理衬底的方法和设备。 衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。 衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。

公开(公告)号：US08986451B2

公开(公告)日：2015-03-24

申请号：US12787082

申请日：2010-05-25

申请人： Piero Sferlazzo

发明人： Piero Sferlazzo

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC分类号： C23C16/4584 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/67109 ,  H01L21/67784 ,  H01L21/68771

摘要： Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

摘要翻译： 描述了包括沉积室，一个或多个衬底载体，气体注入器和加热系统的线性分批CVD系统。 每个衬底载体设置在沉积室中，并且具有至少一个容纳构造成容纳衬底的插座。 衬底载体被配置成将衬底保持在线性构型。 每个气体喷射器包括端口，该端口被配置成沿着一个或多个基板提供均匀分布的气体。 加热系统包括至少一个加热元件和用于均匀地控制基板的温度的加热控制模块。 该系统适用于基板的高体积CVD处理。 沉积室的窄宽使得前体气体能够沿反应室的长度均匀地分布在衬底上，并且与传统的沉积室相比允许更多数量的衬底被加工。

公开(公告)号：US20120070916A1

公开(公告)日：2012-03-22

申请号：US13307239

申请日：2011-11-30

申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

IPC分类号： H01L21/66

CPC分类号： C23C16/45589

摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

公开(公告)号：US08092599B2

公开(公告)日：2012-01-10

申请号：US11827133

申请日：2007-07-10

申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45589

摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

公开(公告)号：US20100330787A1

公开(公告)日：2010-12-30

申请号：US12377825

申请日：2007-08-17

申请人： Piero Sferlazzo

发明人： Piero Sferlazzo

IPC分类号： H01L21/265

CPC分类号： H01L21/26526 ,  H01L21/2236 ,  H01L21/2658 ,  H01L21/68764

摘要： Methods and devices for forming an ultra-thin doping layer in a semiconductor substrate include introducing a thin film of a dopant onto a surface of the substrate and driving at least a portion of the thin dopant layer into a surface of the semiconductor. Gas ions used in the driving-in process may be inert to minimize contamination during the drive in process. The thin films can be deposited using know methods, such as physical deposition and atomic layer deposition. The dopant layers can be driven into the surface of the semiconductor using known techniques, such as pulsed plasma discharge and ion beam. In some embodiments, a standard ion implanter can be retrofit to include a deposition source.

摘要翻译： 用于在半导体衬底中形成超薄掺杂层的方法和装置包括将掺杂剂的薄膜引入到衬底的表面上，并将薄掺杂剂层的至少一部分驱动到半导体的表面中。 在驱动过程中使用的气体离子可能是惰性的，以便在过程中驱动过程中的污染最小化。 可以使用诸如物理沉积和原子层沉积之类的已知方法来沉积薄膜。 可以使用已知的技术（例如脉冲等离子体放电和离子束）将掺杂剂层驱动到半导体的表面中。 在一些实施例中，可以改造标准离子注入机以包括沉积源。

公开(公告)号：US20100310769A1

公开(公告)日：2010-12-09

申请号：US12479834

申请日：2009-06-07

申请人： Eric Armour ,  William E. Quinn ,  Piero Sferlazzo

发明人： Eric Armour ,  William E. Quinn ,  Piero Sferlazzo

IPC分类号： C23C16/44

CPC分类号： C23C16/54 ,  C23C16/4582 ,  C30B25/025 ,  C30B35/00

摘要： A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.

摘要翻译： 连续进料CVD系统包括在CVD处理期间通过沉积室输送晶片的晶片输送机构。 淀积室限定一个通道，用于晶片通过，同时由晶片输送机构输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

公开(公告)号：US20090017190A1

公开(公告)日：2009-01-15

申请号：US11827133

申请日：2007-07-10

申请人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

发明人： Piero Sferlazzo ,  Alexander I. Gurary ,  Eric A. Armour ,  William E. Quinn ,  Steve Ting

IPC分类号： C23C16/00

CPC分类号： C23C16/45589

摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

公开(公告)号：US20070209932A1

公开(公告)日：2007-09-13

申请号：US11372517

申请日：2006-03-10

申请人： Piero Sferlazzo ,  Ming Mao ,  Jinliang Chen ,  David Felsenthal ,  Robert Hieronymi ,  Miroslav Eror

发明人： Piero Sferlazzo ,  Ming Mao ,  Jinliang Chen ,  David Felsenthal ,  Robert Hieronymi ,  Miroslav Eror

IPC分类号： C23C14/00

CPC分类号： C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  C23C14/5833

摘要： The present invention relates to a sputter deposition system and to methods of use thereof for processing substrates using planetary sputter deposition methods. The sputter deposition system includes a deposition chamber having an azimuthal axis. A rotatable member is situated in the chamber and includes a plurality of magnetrons provided thereon. Each magnetron includes a corresponding one of a plurality of sputtering targets. The rotatable member is configured to position each of the magnetrons to direct sputtered material from the corresponding one of the sputtering targets to a deposition zone defined in the deposition chamber. A transport mechanism is situated in the deposition chamber and includes an arm rotatable about the azimuthal axis. A substrate holder is attached to the arm of the transport mechanism and supports the substrate as the arm rotates the substrate holder to intersect the deposition zone for depositing sputtered material on the substrate.

摘要翻译： 溅射沉积系统技术领域本发明涉及一种溅射沉积系统及其使用方法，用于使用行星式溅射沉积方法来处理衬底 溅射沉积系统包括具有方位角轴的沉积室。 可旋转构件位于腔室中并且包括设置在其上的多个磁控管。 每个磁控管包括多个溅射靶中相应的一个。 可旋转构件被构造成定位每个磁控管以将溅射的材料从相应的一个溅射靶引导到在沉积室中限定的沉积区。 输送机构位于沉积室中并且包括可围绕方位轴线旋转的臂。 衬底保持器附接到输送机构的臂上并且当臂旋转衬底保持器以与沉积区相交以在基底上沉积溅射材料时支撑衬底。

公开(公告)号：US06203406B1

公开(公告)日：2001-03-20

申请号：US09309931

申请日：1999-05-11

申请人： Peter H. Rose ,  Piero Sferlazzo ,  Robert G. van der Heide

发明人： Peter H. Rose ,  Piero Sferlazzo ,  Robert G. van der Heide

IPC分类号： B24B100

CPC分类号： B24C3/22 ,  B08B7/0092 ,  B24C1/003 ,  H05K3/26

摘要： A scheme for removing foreign material from the surface of a substrate by directing a high velocity aerosol of at least partially frozen particles against the foreign material to be removed. Different schemes are described for accelerating the frozen particles to very high velocities sufficient for particle removal, removal of organic layers (e.g., hard baked photoresist or ion implanted photoresist) and removal of metallic layers. In one embodiment, liquid droplets are entrained in a high velocity gas flow and the resulting gas/liquid mixture is passed through an expansion nozzle to produce a high velocity aerosol of frozen particles. In another embodiment, frozen aerosol particles are entrained in, e.g., a sonic or supersonic gas jet before impacting a surface to be cleaned. The cleaning aerosols may be applied to substrates inside a vacuum chamber or directly from a hand-held device. Also, various scanning systems are described for achieving substantially uniform exposure of the substrate to the cleaning aerosol.

摘要翻译： 通过将至少部分冻结的颗粒的高速气溶胶引导到待除去的异物上来从基材的表面除去异物的方案。 描述了用于将冷冻颗粒加速至非常高的速度以用于颗粒去除，去除有机层（例如硬烘烤的光致抗蚀剂或离子注入的光致抗蚀剂）和去除金属层的不同方案。 在一个实施例中，液滴被夹带在高速气流中，并且使得到的气体/液体混合物通过膨胀喷嘴以产生冷冻颗粒的高速气溶胶。 在另一个实施方案中，在冲击待清洁表面之前，将冷冻的气溶胶颗粒夹带在例​​如声波或超音速气体射流中。 清洁气溶胶可以施加到真空室内的基底或直接从手持装置施加。 此外，描述了各种扫描系统，以实现基板对清洁气溶胶的基本上均匀的曝光。