公开(公告)号：US20060105466A1

公开(公告)日：2006-05-18

申请号：US10987072

申请日：2004-11-12

申请人： Michael Centanni ,  Peter Burke

发明人： Michael Centanni ,  Peter Burke

IPC分类号： A61L2/20 ,  G01N33/00

CPC分类号： A61L2/202 ,  G01N33/0039 ,  Y10T436/206664

摘要： The present invention discloses a sensor for detecting ozone, the sensor comprises an element exhibiting piezoelectric properties having a coating that is removed from the quartz crystal upon exposure to ozone.

摘要翻译： 本发明公开了一种用于检测臭氧的传感器，该传感器包括具有压电特性的元件，其具有在暴露于臭氧时从石英晶体除去的涂层。

公开(公告)号：US20050208758A1

公开(公告)日：2005-09-22

申请号：US11131003

申请日：2005-05-16

申请人： Hong-Qiang Lu ,  Peter Burke ,  Wilbur Catabay

发明人： Hong-Qiang Lu ,  Peter Burke ,  Wilbur Catabay

IPC分类号： H01L21/312 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/02211 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02315 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3121 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is directed to improved dielectric copper barrier layer and related interconnect structures. One structure includes a semiconductor substrate having a copper line. An insulating layer formed of at least one of silicon and carbon is formed on the underlying copper line. An opening is formed in the insulating layer to expose a portion of the copper line. The inner surface of the opening in the insulating layer has a dielectric barrier layer formed thereon to prevent the diffusion of copper into the insulating layer. A copper plug is formed to fill the opening and make electrical contact with the underlying copper interconnect structure. Aspects of the invention also include methods for forming the dielectric copper barrier layers and associate copper interconnects to the underlying copper lines.

摘要翻译： 本发明涉及改进的介电铜阻挡层和相关互连结构。 一种结构包括具有铜线的半导体衬底。 在下面的铜线上形成由硅和碳中的至少一种形成的绝缘层。 在绝缘层中形成开口以露出铜线的一部分。 绝缘层中的开口的内表面具有形成在其上的电介质阻挡层，以防止铜扩散到绝缘层中。 形成铜塞以填充开口并与下面的铜互连结构电接触。 本发明的方面还包括用于形成电介质铜阻挡层和将铜互连连接到下面的铜线的方法。

公开(公告)号：US06939391B2

公开(公告)日：2005-09-06

申请号：US10220049

申请日：2001-03-02

申请人： Rodney J. Dry ,  Peter Burke

发明人： Rodney J. Dry ,  Peter Burke

IPC分类号： C21B11/08 ,  C21B11/00 ,  C21B13/00 ,  C21B13/10

CPC分类号： C21B13/0026 ,  C21B13/0013 ,  Y02P10/136

摘要： A molten bath-based direct smelting process for producing ferrous metal from a ferrous feed material is disclosed. The process is characterised by injecting pro-heated air downwardly into metallurgical vessel at an angle of 20 to 90° C. relative to a horizontal axis and at a temperature of 800-1400 ° C. and at a velocity of 200-600 m/s via at least one lance (27) . This step forces molten material in the region of a lower end of the lance away from the lance and forming a “free”space around the lower end of the lance that has a concentration of molten material that is lower than the molten material concentration in the raised bath. The process is further characterised in that the lance is located so that: (i) the lance extends into the vessel a distance that is at least the outer diameter of he lover end of the lance; and (ii) the lower end of the lance is at least 3 times the outer diameter of the lower end of the lance above a quiescent surface of the molt bath.

摘要翻译： 公开了一种用于从含铁原料生产黑色金属的基于熔池的直接熔炼方法。 该方法的特征在于，将预热的空气以相对于水平轴20度至90度的角度并且在800-1400℃的温度和200-600米/秒的速度向下注入冶金容器中， 至少一个喷枪（27）。 该步骤迫使喷枪下端区域中的熔融材料远离喷枪，并在喷枪下端周围形成“自由”空间，该空间的熔融材料浓度低于熔融材料的熔融材料浓度 沐浴。 该方法的特征还在于，所述喷枪的位置使得：（i）所述喷枪延伸到所述船舶中至少至少是所述喷枪的情人端的外径的距离; 和（ii）喷枪的下端至少是蜕皮浴静止表面上方的喷枪下端外径的3倍。

公开(公告)号：US20050186782A1

公开(公告)日：2005-08-25

申请号：US11090107

申请日：2005-03-24

申请人： Peter Burke ,  William Barth ,  Hongqiang Lu

发明人： Peter Burke ,  William Barth ,  Hongqiang Lu

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76808 ,  H01L21/76813 ,  H01L21/76838 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.

摘要翻译： 通过图案化第一电介质以形成金属线来形成双镶嵌互连结构。 第二电介质设置在第一电介质上并被图案化以形成通孔。 第一金属线以相对于通孔接合的结构进行图案化，使得当将进入第二电介质的通孔蚀刻延伸到第一电介质中时形成空腔。 在形成通孔的情况下，以一体的方式填充导电金属以形成通孔突起，以改善通孔和金属线之间的电接触。

公开(公告)号：US20050176216A1

公开(公告)日：2005-08-11

申请号：US11106307

申请日：2005-04-14

申请人： Hao Cui ,  Peter Burke ,  Wilbur Catabay

发明人： Hao Cui ,  Peter Burke ,  Wilbur Catabay

IPC分类号： C23C16/32 ,  H01L21/00 ,  H01L21/314 ,  H01L21/46 ,  H01L21/768 ,  H01L29/15

CPC分类号： H01L21/02167 ,  C23C16/325 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828

摘要： A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.

公开(公告)号：US09386803B2

公开(公告)日：2016-07-12

申请号：US12981909

申请日：2010-12-30

申请人： Peter Burke ,  Meinhard Gusik ,  Julia Hufen ,  Luis Jimenez ,  Raymond Robertson ,  Ramesh Srinivasan

发明人： Peter Burke ,  Meinhard Gusik ,  Julia Hufen ,  Luis Jimenez ,  Raymond Robertson ,  Ramesh Srinivasan

IPC分类号： A24D3/12 ,  A24D3/06 ,  A24D3/08 ,  A24D3/16 ,  D04H1/407 ,  A24D3/14

CPC分类号： A24D3/12 ,  A24D3/062 ,  A24D3/066 ,  A24D3/08 ,  A24D3/14 ,  A24D3/163 ,  D04H1/407

摘要： A tobacco smoking device comprises a porous mass of active particles adapted to enhance a tobacco smoke flowing over said active particles and binder particles. The active particles comprises about 1-99% weight of the porous mass, and the binder particles comprises about 1-99% weight of said porous mass. The active particles and said binder particles are bound together at randomly distributed points throughout the porous mass. The active particles have a greater particle size than the binder particles.

摘要翻译： 吸烟装置包括适于增强在所述活性颗粒和粘合剂颗粒上流动的烟草烟雾的多孔质量的活性颗粒。 活性颗粒包含约1-99重量％的多孔质量，粘合剂颗粒占所述多孔质量的约1-99重量％。 活性颗粒和所述粘合剂颗粒在整个多孔质量块中以随机分布的点结合在一起。 活性颗粒具有比粘合剂颗粒更大的颗粒尺寸。

公开(公告)号：US20140019208A1

公开(公告)日：2014-01-16

申请号：US13796089

申请日：2013-03-12

申请人： Nathan W. Brixius ,  Vincent E. Poortinga ,  Ross Link ,  Peter Burke ,  Shweta Shah

发明人： Nathan W. Brixius ,  Vincent E. Poortinga ,  Ross Link ,  Peter Burke ,  Shweta Shah

IPC分类号： G06Q30/02

CPC分类号： G06Q30/0202 ,  G06Q30/0201

摘要： Methods, apparatus, systems and articles of manufacture are disclosed to evaluate model stability and fit. An example method disclosed herein includes building a fit function based on causal factors associated with a marketing mix model, building a stability function based on override factors associated with corresponding ones of the causal factors, and integrating scaling factors into the stability function to facilitate a combined regression analysis of the fit function and the stability function, the scaling factors respectively associated with corresponding causal factors.

摘要翻译： 公开了方法，装置，系统和制品以评估模型的稳定性和适合性。 本文公开的示例性方法包括基于与营销组合模型相关联的因果因素建立拟合函数，基于与相应因素相关联的覆盖因子建立稳定性函数，以及将缩放因子整合到稳定性函数中以促进组合 适应函数和稳定性函数的回归分析，分解因子分别与相应的因果因素相关联。

公开(公告)号：US20120247980A1

公开(公告)日：2012-10-04

申请号：US13412515

申请日：2012-03-05

申请人： Peter Burke ,  Tae-Sun Lim ,  Antonio Davila ,  Douglas C. Wallace ,  Katayoun Zand

发明人： Peter Burke ,  Tae-Sun Lim ,  Antonio Davila ,  Douglas C. Wallace ,  Katayoun Zand

IPC分类号： G01N27/26 ,  B32B37/02 ,  G01N27/333

CPC分类号： G01N27/4035 ,  G01N33/4833 ,  Y10S435/82

摘要： A microfluidic sensor device includes a substrate having patterned thereon at least one Ag/AgCl electrode (working electrode) and an inner chamber overlying the at least one Ag/AgCl electrode. The device includes an ion selective permeable membrane permeable to TPP+ disposed on one side of the first chamber and a sensing chamber overlying the ion selective permeable membrane. A separate reference electrode is inserted into the sensing chamber. The working electrode and reference electrode are coupled to a voltmeter to measure voltage. This voltage can then be translated into a TPP+ concentration which is used to determine the mitochondrial membrane potential (ΔΨm).

摘要翻译： 微流体传感器装置包括其上具有图案化的至少一个Ag / AgCl电极（工作电极）和覆盖至少一个Ag / AgCl电极的内室的基板。 该装置包括设置在第一室的一侧上的可渗透TPP +的离子选择性渗透膜和覆盖离子选择性渗透膜的感测室。 单独的参考电极插入感测室。 工作电极和参考电极耦合到电压表以测量电压。 然后可以将该电压转化为用于确定线粒体膜电位（＆Dgr;Ψm）的TPP +浓度。

公开(公告)号：US07531442B2

公开(公告)日：2009-05-12

申请号：US11290087

申请日：2005-11-30

申请人： Jayanthi Pallinti ,  Dilip Vijay ,  Hemanshu Bhatt ,  Sey-Shing Sun ,  Hong Ying ,  Chiyi Kao ,  Peter Burke ,  Ramaswamy Ranganathan ,  Qwai Low

发明人： Jayanthi Pallinti ,  Dilip Vijay ,  Hemanshu Bhatt ,  Sey-Shing Sun ,  Hong Ying ,  Chiyi Kao ,  Peter Burke ,  Ramaswamy Ranganathan ,  Qwai Low

IPC分类号： H01L21/44

CPC分类号： H01L21/76801 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00

摘要： Different ways to reduce or eliminate the IMC cracking issues in wire bonded parts, including: changing to more compressive dielectric films for top, R1, and R2; changing the top passivation film stacks to more compressive films; changing the low k film to a higher compressive film; reducing the R layer thickness and pattern density to reduce tensile stress; and minimizing anneal and dielectric deposition temperatures. Each of the methods can be used individually or in combination with each other to reduce overall tensile stresses in the Cu/low-k wafer thus reducing or eliminating the IMC cracking issue currently seen in the post wire bonded parts.

摘要翻译： 减少或消除电线接合部件中IMC裂纹问题的不同方式，包括：更换为顶部，R1和R2的更多压电绝缘膜; 将顶部钝化膜堆叠更改为更多的压缩膜; 将低k膜改为较高的压缩膜; 降低R层厚度和图案密度以降低拉伸应力; 并最小化退火和介电沉积温度。 每个方法可以单独使用或彼此组合使用以减少Cu / low-k晶片中的总拉伸应力，从而减少或消除了现在在后引线接合部件中看到的IMC裂纹问题。

公开(公告)号：US20070155160A1

公开(公告)日：2007-07-05

申请号：US11323400

申请日：2005-12-29

申请人： Derryl Allman ,  Hemanshu Bhatt ,  Charles May ,  Peter Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David Price ,  David Pritchard

发明人： Derryl Allman ,  Hemanshu Bhatt ,  Charles May ,  Peter Burke ,  Byung-Sung Kwak ,  Sey-Shing Sun ,  David Price ,  David Pritchard

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L24/02 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/14

摘要： A method and apparatus for redirecting void diffusion away from vias in an integrated circuit design includes steps of forming an electrical conductor in a first electrically conductive layer of an integrated circuit design, forming a via between a distal end of the electrical conductor and a second electrically conductive layer of the integrated circuit design, and reducing tensile stress in the electrical conductor to divert void diffusion away from the via.

摘要翻译： 用于在集成电路设计中将空隙扩散转向远离通孔的方法和装置包括在集成电路设计的第一导电层中形成电导体的步骤，在电导体的远端和第二电导体之间形成通孔 集成电路设计的导电层，并且减小电导体中的拉伸应力以将空隙扩散转移离开通孔。