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33 条记录 (耗时 0.053 秒)

    Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment
    22.
    发明授权
    Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment 失效
    添加D2至H2以检测和校准由离子电子附着形成的原子氢

    公开(公告)号：US07434719B2

    公开(公告)日：2008-10-14

    申请号：US11298262

    申请日：2005-12-09

    申请人： Chun Christine Dong ,  Eugene Joseph Karwacki, Jr. ,  Richard E. Patrick

    发明人： Chun Christine Dong ,  Eugene Joseph Karwacki, Jr. ,  Richard E. Patrick

    IPC分类号： B23K35/38 ,  B23H3/00

    CPC分类号： B23K1/206 ,  H01L2924/0002 ,  H05K3/3489 ,  H01L2924/00

    摘要： A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium, comprising the steps of: a) providing one or more components to be soldered which are connected to a first electrode as a target assembly; b) providing a second electrode adjacent the target assembly; c) providing a gas mixture comprising a reducing gas comprising hydrogen and deuterium between the first and second electrodes; d) providing a direct current (DC) voltage to the first and second electrodes to form an emission current between the electrodes and donating electrons to the reducing gas to form negatively charged ionic reducing gas and molecules of hydrogen bonded to deuterium; e) contacting the target assembly with the negatively charged ionic reducing gas and reducing oxides on the target assembly. Related apparatus is also disclosed.

    摘要翻译： 一种通过使用包括氢和氘的还原气体的气体混合物通过电子附着来检测和校准要焊接的一种或多种组分的干熔剂金属表面的方法，包括以下步骤：a）提供一种或多种待焊接的组分， 连接到作为目标组件的第一电极; b）提供邻近目标组件的第二电极; c）在所述第一和第二电极之间提供包含包含氢和氘的还原气体的气体混合物; d）向所述第一和第二电极提供直流（DC）电压以在所述电极之间形成发射电流并且将电子供给到所述还原气体以形成带负电荷的离子还原气体和键合到氘的氢分子; e）使目标组件与负电荷的离子还原气体和目标组件上的还原氧化物接触。 还公开了相关装置。

    Selective etching and formation of xenon difluoride
    26.
    发明授权
    Selective etching and formation of xenon difluoride 有权
    选择性蚀刻和形成氙二氟化物

    公开(公告)号：US08278222B2

    公开(公告)日：2012-10-02

    申请号：US12360588

    申请日：2009-01-27

    申请人： Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    发明人： Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

    摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。

    Removal of transition metal ternary and/or quaternary barrier materials from a substrate
    28.
    发明授权
    Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
    从基底去除过渡金属三元和/或四元阻挡材料

    公开(公告)号：US07371688B2

    公开(公告)日：2008-05-13

    申请号：US10942301

    申请日：2004-09-15

    申请人： Bing Ji ,  Martin Jay Plishka ,  Dingjun Wu ,  Peter Richard Badowski ,  Eugene Joseph Karwacki, Jr.

    发明人： Bing Ji ,  Martin Jay Plishka ,  Dingjun Wu ,  Peter Richard Badowski ,  Eugene Joseph Karwacki, Jr.

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/32135 ,  C23C16/4405 ,  C23G5/00 ,  H01L21/32136 ,  Y10S438/905

    摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译： 本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。 在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

    Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
    29.
    发明授权
    Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 失效
    蚀刻高介电常数材料和清洁高介电常数材料沉积室的方法

    公开(公告)号：US07357138B2

    公开(公告)日：2008-04-15

    申请号：US10723714

    申请日：2003-11-26

    申请人： Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki, Jr. ,  Dingjun Wu

    发明人： Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki, Jr. ,  Dingjun Wu

    IPC分类号： B08B9/00 ,  B08B6/00

    CPC分类号： C23C16/4405 ,  B08B7/00 ,  B08B7/0035

    摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译： 本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。 在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法 含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去 来自底物的物质。

    Porous low dielectric constant compositions and methods for making and using same
    30.
    发明授权
    Porous low dielectric constant compositions and methods for making and using same 有权
    多孔低介电常数组合物及其制备和使用方法

    公开(公告)号：US07332445B2

    公开(公告)日：2008-02-19

    申请号：US11228223

    申请日：2005-09-19

    申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Eugene Joseph Karwacki, Jr. ,  Raymond Nicholas Vrtis ,  Jean Louise Vincent

    发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Eugene Joseph Karwacki, Jr. ,  Raymond Nicholas Vrtis ,  Jean Louise Vincent

    IPC分类号： H01L21/31

    CPC分类号： C03C3/045 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

    摘要翻译： 多孔有机硅酸盐玻璃（OSG）膜：其中，X，Y，X，Y， 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为5〜30原子％，y为10〜 z为0〜15原子％，具有作为甲基（Si-CH 3 3）的碳原子的硅酸盐网络，并且含有直径小于3nm的等效球径，介电常数小于2.7的孔 。 通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。 致孔剂前体在预备膜内形成孔，随后被除去以提供多孔膜。 组合物，成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物，以及含有醇，醚，羰基，羧酸，酯，硝基，伯胺，仲胺和/或叔碳原子的烃的致孔剂前体 胺官能团或组合。