摘要:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
摘要:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
摘要:
A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.
摘要翻译:多孔有机硅酸盐玻璃(OSG)膜:其中,X,Y,X,Y, 其中v + w + x + y + z = 100%,v为10〜35原子%,w为10〜65原子%,x为5〜30原子%,y为10〜 z为0〜15原子%,具有作为甲基(Si-CH 3 3)的碳原子的硅酸盐网络,并且含有直径小于3nm的等效球径,介电常数小于2.7的孔 。 通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。 致孔剂前体在预备膜内形成孔,随后被除去以提供多孔膜。 组合物,成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物,以及含有醇,醚,羰基,羧酸,酯,硝基,伯胺,仲胺和/或叔碳原子的烃的致孔剂前体 胺官能团或组合。
摘要:
The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
摘要:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要:
A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译:多孔有机硅玻璃(OSG)膜由式SivOwCxHyFz表示的材料的单相组成,其中v + w + x + y + z = 100%,v为10〜35原子%,w为10〜 65原子%,x为5〜30原子%,y为10〜50原子%,z为0〜15原子%,其中,膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供,其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂(致孔剂)沉积,其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物,例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。
摘要:
A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R1n(OR2)p(O(O)CR4)3−n−pSi—R7—SiR3m(O(O)CR5)q(OR6)3−m−q where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2, R8 and R7 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, R4 and Rs are independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m>1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.
摘要翻译:多孔有机硅玻璃(OSG)膜由式SivOwCxHyFz表示的材料的单相组成,其中v + w + x + y + z = 100%,v为10〜35原子%,w为10〜 65原子%,x为5〜30原子%,y为10〜50原子%,z为0〜15原子%,其中,膜的孔隙和介电常数小于2.6。 该薄膜由化学气相沉积方法提供,其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂(致孔剂)沉积,其中前体是式R1n(OR2)p(O(O) )CR 4)3-n-pSi-R 7 -SiR 3 m(O(O)CR 5)q(OR 6)3-m-q其中R 1和R 3独立地为H或C 1至C 4直链或支链,饱和,单或多不饱和, 环状,部分或完全氟化的烃; R2,R8和R7独立为C1至C6直链或支链,饱和,单或多不饱和,环状,芳族,部分或全部是氟化的烃,R4和R5独立地为H,C1至C6直链或支链,饱和,单或多 不饱和的,环状的,芳族的,部分或完全氟化的烃,n为0至3,m为0至3,q为0至3,p为0至3,条件是n + m> 1,n + p 3和 m + q 3,其中致孔剂选自降冰片二烯,α-萜品烯,柠檬烯,环辛烷和伞花烃。 随后除去致孔剂以提供多孔膜。