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60 条记录 (耗时 0.022 秒)

    Photoactive compounds
    21.
    发明授权
    Photoactive compounds 失效
    光活性化合物

    公开(公告)号：US07547501B2

    公开(公告)日：2009-06-16

    申请号：US11538841

    申请日：2006-10-05

    申请人： Ralph R. Dammel ,  M. Dalil Rahman ,  David L. Rentkiewicz ,  Karl van Werden

    发明人： Ralph R. Dammel ,  M. Dalil Rahman ,  David L. Rentkiewicz ,  Karl van Werden

    IPC分类号： G03C1/73 ,  G03C1/76 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： C07F5/027 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： The present application relates to photoactive materials having the formula wherein C1+ is a cation; each of R30, R31, R32, R33, R34, R35, R36, R37, R38, R39, R40, and R41 are selected from hydrogen, alkyl, alkyl chain optionally containing one or more O atoms, halide, aryl, aralkyl, alkoxyalkyl, cycloalkyl, hydroxyl, and alkoxy, the alkyl, alkyl chain optionally containing one or more O atoms, aryl, aralkyl, alkoxyalkyl, cycloalkyl, and alkoxy groups being unsubstituted or substituted.

    摘要翻译： 本申请涉及具有下式的光活性材料：其中C1 +是阳离子; R30，R31，R32，R33，R34，R35，R36，R37，R38，R39，R40和R41各自选自氢，烷基，任选含有一个或多个O原子的烷基链，卤素，芳基，芳烷基，烷氧基烷基 ，环烷基，羟基和烷氧基，烷基，任选地含有一个或多个O原子的烷基，芳基，芳烷基，烷氧基烷基，环烷基和烷氧基是未取代或取代的。

    Antireflective coating compositions
    22.
    发明申请
    Antireflective coating compositions 有权
    防反射涂料组合物

    公开(公告)号：US20080076059A1

    公开(公告)日：2008-03-27

    申请号：US11527862

    申请日：2006-09-27

    申请人： David J. Abdallah ,  Ralph R. Dammel

    发明人： David J. Abdallah ,  Ralph R. Dammel

    IPC分类号： G03C1/00

    CPC分类号： G03F7/091 ,  G03F7/2041

    摘要： The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractive index of the antireflective coating composition to a value equal or greater than 1.8 at exposure radiation used for imaging the photoresist and a functional moiety capable of absorbing exposure radiation used for imaging the photoresist. The invention further relates to a process for imaging the antireflective coating of the present invention.

    摘要翻译： 本发明涉及一种用于光致抗蚀剂的旋涂防反射涂料组合物，其包含聚合物，交联化合物和热酸产生剂，其中聚合物包含至少一个能够将抗反射涂料组合物的折射率增加至 在用于成像光致抗蚀剂的曝光辐射下的值等于或大于1.8，以及能够吸收用于成像光致抗蚀剂的曝光辐射的功能部件。 本发明还涉及本发明的抗反射涂层成像方法。

    Method for producing positive photoresist image utilizing diazo ester of benzolactone ring compound and diazo sulfonyl chloride
    24.
    发明授权
    Method for producing positive photoresist image utilizing diazo ester of benzolactone ring compound and diazo sulfonyl chloride 失效
    使用苯并内酯环化合物和重氮磺酰氯的重氮酯制造正性光致抗蚀剂图像的方法

    公开(公告)号：US5348842A

    公开(公告)日：1994-09-20

    申请号：US42362

    申请日：1993-04-02

    申请人： Dinesh N. Khanna ,  Douglas McKenzie ,  Chester J. Sobodacha ,  Ralph R. Dammel

    发明人： Dinesh N. Khanna ,  Douglas McKenzie ,  Chester J. Sobodacha ,  Ralph R. Dammel

    IPC分类号： G03F7/022 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

    CPC分类号： G03F7/022 ,  Y10S430/168

    摘要： A photosensitizer comprising a diazo ester of benzolactone ring compound, such as phenolphthalein or cresolphthalein as the backbone, where at least one of the hydroxy groups on benzolactone ring has been esterified with diazo-sulfonyl chloride consisting of 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride or a mixture thereof, and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition and a suitable solvent.

    摘要翻译： 一种光敏剂，其包含苯并内酯环化合物的重氮酯，例如酚酞或甲酚酞作为主链，其中至少一个苯甲酸内酯环上的羟基已经被重氮化磺酰氯酯化，重氮磺酰氯由60至100摩尔％ 4或2,1,5-重氮磺酰氯或其混合物，以及光致抗蚀剂，其包含光致抗蚀剂组合物中以足以使光致抗蚀剂组合物均匀光敏的量的光敏剂的混合物; 水不溶性的碱溶性酚醛清漆树脂，酚醛清漆树脂以足以形成基本均匀的光致抗蚀剂组合物和合适溶剂的量存在于光致抗蚀剂组合物中。

    Composition for coating over a photoresist pattern
    26.
    发明授权
    Composition for coating over a photoresist pattern 有权
    用于在光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US07745077B2

    公开(公告)日：2010-06-29

    申请号：US12141307

    申请日：2008-06-18

    申请人： Muthiah Thiyagarajan ,  Yi Cao ,  Sung Eun Hong ,  Ralph R. Dammel

    发明人： Muthiah Thiyagarajan ,  Yi Cao ,  Sung Eun Hong ,  Ralph R. Dammel

    IPC分类号： G03F7/30

    CPC分类号： C09D133/14 ,  C09D133/066 ,  C09D139/00 ,  G03F7/40

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

    摘要翻译： 本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有至少一个具有烷基氨基的单元的聚合物，其中该单元具有结构（1），其中R 1至R 5独立地选自氢和C 1 至C6烷基，W为C1至C6烷基。 本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。

    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    27.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US20080248427A1

    公开(公告)日：2008-10-09

    申请号：US11697804

    申请日：2007-04-09

    申请人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    发明人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC分类号： G03C1/00

    CPC分类号： G03F7/40 ,  C09D139/00

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译： 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1〜 C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH），胺（NH 2） ），羧酸和酰胺（CONH 2 2），表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

    Photoresist composition for deep UV radiation containing an additive
    28.
    发明授权
    Photoresist composition for deep UV radiation containing an additive 失效
    用于含有添加剂的深紫外线辐射的光刻胶组合物

    公开(公告)号：US06723488B2

    公开(公告)日：2004-04-20

    申请号：US10037161

    申请日：2001-11-07

    申请人： Takanori Kudo ,  Ralph R. Dammel ,  Munirathna Padmanaban

    发明人： Takanori Kudo ,  Ralph R. Dammel ,  Munirathna Padmanaban

    IPC分类号： G03F7004

    CPC分类号： G03F7/0392 ,  G03F7/0397 ,  G03F7/40 ,  Y10S430/106

    摘要： The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.

    摘要翻译： 本发明涉及对深紫外线辐射敏感的光致抗蚀剂组合物，特别是在100-200纳米（nm）范围内敏感的正性工作光致抗蚀剂。 光致抗蚀剂组合物包含：a）不溶于碱性水溶液且包含至少一种酸不稳定基团的聚合物，此外，聚合物基本上是非酚类的，b）能够在辐射时产生酸的化合物，c ）减少电子和离子对光致抗蚀剂图像的影响的添加剂。

    Bottom antireflective coatings through refractive index modification by anomalous dispersion
    29.
    发明授权
    Bottom antireflective coatings through refractive index modification by anomalous dispersion 失效
    底部抗反射涂层通过异常色散的折射率修饰

    公开(公告)号：US6042992A

    公开(公告)日：2000-03-28

    申请号：US811806

    申请日：1997-03-06

    申请人： Ralph R. Dammel ,  Robert N. Norwood

    发明人： Ralph R. Dammel ,  Robert N. Norwood

    IPC分类号： H01L21/027 ,  G03F7/004 ,  G03F7/022 ,  G03F7/09 ,  G03F7/11 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/00

    CPC分类号： G03F7/091

    摘要： The invention provides a process for the generation of an antireflective bottom layer with effective reduction of substrate reflectivity and swing curve effects in lithographic applications. It involves the use of a suitably selected monomeric and/or polymeric dye which brings the real part of the refractive index into a range which is optimal for the suppression of reflection-related effects. The refractive index change is effected via anomalous dispersion, i.e., by utilizing changes in the real part of the refractive index caused by the bottom layer's absorption.

    摘要翻译： 本发明提供了一种用于产生抗反射底层的方法，其有效降低了光刻应用中的基板反射率和摆动曲线效应。 它涉及使用适当选择的单体和/或聚合染料，其使折射率的实部成为抑制反射相关效应最佳的范围。 折射率变化通过异常色散实现，即通过利用由底层吸收引起的折射率的实部的变化来实现。