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    Hardmask Process for Forming a Reverse Tone Image
    4.
    发明申请
    Hardmask Process for Forming a Reverse Tone Image 审中-公开
    形成反向色调图像的硬掩模处理

    公开(公告)号：US20100040838A1

    公开(公告)日：2010-02-18

    申请号：US12192621

    申请日：2008-08-15

    申请人： David J. Abdallah ,  Ralph R. Dammel ,  Mark Neisser

    发明人： David J. Abdallah ,  Ralph R. Dammel ,  Mark Neisser

    IPC分类号： B44C1/22 ,  B32B5/00

    CPC分类号： G03F7/40 ,  G03F7/0752 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/31138 ,  Y10T428/24802

    摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    摘要翻译： 本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在基底上形成吸收性底层; b）在底层上形成正性光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）用硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的光致抗蚀剂图案; e）从硅涂层组合物在硬化的光致抗蚀剂图案上形成硅涂层; f）干蚀刻硅涂层以去除硅涂层，直到硅涂层具有与光致抗蚀剂图案大致相同的厚度; 并且g）干蚀刻以除去光致抗蚀剂和底层，从而在光致抗蚀剂图案的原始位置下形成沟槽。 本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

    Antireflective coating compositions
    5.
    发明申请
    Antireflective coating compositions 有权
    防反射涂料组合物

    公开(公告)号：US20080076059A1

    公开(公告)日：2008-03-27

    申请号：US11527862

    申请日：2006-09-27

    申请人： David J. Abdallah ,  Ralph R. Dammel

    发明人： David J. Abdallah ,  Ralph R. Dammel

    IPC分类号： G03C1/00

    CPC分类号： G03F7/091 ,  G03F7/2041

    摘要： The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractive index of the antireflective coating composition to a value equal or greater than 1.8 at exposure radiation used for imaging the photoresist and a functional moiety capable of absorbing exposure radiation used for imaging the photoresist. The invention further relates to a process for imaging the antireflective coating of the present invention.

    摘要翻译： 本发明涉及一种用于光致抗蚀剂的旋涂防反射涂料组合物，其包含聚合物，交联化合物和热酸产生剂，其中聚合物包含至少一个能够将抗反射涂料组合物的折射率增加至 在用于成像光致抗蚀剂的曝光辐射下的值等于或大于1.8，以及能够吸收用于成像光致抗蚀剂的曝光辐射的功能部件。 本发明还涉及本发明的抗反射涂层成像方法。

    Antireflective coating compositions
    6.
    发明授权
    Antireflective coating compositions 有权

    公开(公告)号：US07416834B2

    公开(公告)日：2008-08-26

    申请号：US11527862

    申请日：2006-09-27

    申请人： David J. Abdallah ,  Ralph R. Dammel

    发明人： David J. Abdallah ,  Ralph R. Dammel

    IPC分类号： G03C1/00

    CPC分类号： G03F7/091 ,  G03F7/2041

    摘要： The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractive index of the antireflective coating composition to a value equal or greater than 1.8 at exposure radiation used for imaging the photoresist and a functional moiety capable of absorbing exposure radiation used for imaging the photoresist. The invention further relates to a process for imaging the antireflective coating of the present invention.

    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
    9.
    发明授权
    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
    用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物

    公开(公告)号：US06991888B2

    公开(公告)日：2006-01-31

    申请号：US10439472

    申请日：2003-05-16

    申请人： Munirathna Padmanaban ,  Takanori Kudo ,  Sangho Lee ,  Ralph R. Dammel ,  M. Dalil Rahman

    发明人： Munirathna Padmanaban ,  Takanori Kudo ,  Sangho Lee ,  Ralph R. Dammel ,  M. Dalil Rahman

    IPC分类号： G03F7/004 ,  C08F2/46 ,  C07C53/00 ,  G03C5/00

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/115

    摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

    摘要翻译： 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。