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    COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY
    21.
    发明申请
    COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY 审中-公开
    组合物和浸没法的方法

    公开(公告)号：US20150044609A1

    公开(公告)日：2015-02-12

    申请号：US14525044

    申请日：2014-10-27

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Deyan Wang ,  Cheng-Bai Xu ,  George G. Barclay

    IPC: G03F7/20 ,  G03F7/038

    CPC classification number: G03F7/2041 ,  C08F220/22 ,  C08F220/24 ,  C08F220/26 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0757 ,  H01L21/0274

    Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

    Abstract translation: 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含两种或多种不同的材料，其可以与抗蚀剂的树脂组分基本上不可混合。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

    PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME
    22.
    发明申请
    PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME 有权
    光电发生器和包含相同的光电发生器

    公开(公告)号：US20130171567A1

    公开(公告)日：2013-07-04

    申请号：US13711679

    申请日：2012-12-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Cheng-Bai Xu ,  Mingqi Li ,  William Williams, III

    IPC: C07D493/18 ,  G03F7/027

    CPC classification number: C07D493/18 ,  G03F7/0045 ,  G03F7/027 ,  G03F7/0392

    Abstract: A photoacid generator includes those of formula (I): wherein each Ra in formula 1 is independently H, F, a C1-10 nonfluorinated organic group, C1-10 fluorinated organic group, or a combination comprising at least one of the foregoing, provided at least one Ra is F or a C1-10 fluorinated organic group, the C1-10 fluorinated and nonfluorinated organic groups each optionally comprising O, S, N, or a combination comprising at least one of the foregoing heteroatoms; L1 is a linking group comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing; G+ is an onium salt of the formula (II): wherein in formula (II), X is S or I, each R0 is independently C1-30 alkyl group; a polycyclic or monocyclic C3-30 cycloalkyl group; a polycyclic or monocyclic C4-30 aryl group; or a combination comprising at least one of the foregoing, provided at least one R0 is substituted where each R0 is a C6 monocyclic aryl group, and wherein when X is I, a is 2, and where X is S, a is 3, p is 0 or 1, and q is an integer of from 1 to 10.

    Abstract translation: 一种光酸产生剂包括式（I）的那些：其中式1中的每个Ra独立地是H，F，C 1-10非氟化有机基团，C 1-10氟化有机基团或包含至少一个上述的组合， 至少一个R a为F或C 1-10氟化有机基团，所述C 1-10氟化和非氟化有机基团各自任选包含O，S，N或包含至少一个前述杂原子的组合; L 1是包含O，S，N，F的杂原子的连接基团，或包含前述的至少一种的组合; G +是式（II）的鎓盐：其中在式（II）中，X是S或I，每个R 10独立地是C 1-30烷基; 多环或单环C 3-30环烷基; 多环或单环C 4-30芳基; 或包含前述的至少一种的组合，只要至少一个R 0被取代，其中每个R 0是C 6单环芳基，其中当X是I时，a是2，并且其中X是S，a是3，p 为0或1，q为1至10的整数。

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS
    24.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20200379353A1

    公开(公告)日：2020-12-03

    申请号：US16871228

    申请日：2020-05-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder KAUR ,  Colin LIU ,  Xisen Hou ,  Kevin Rowell ,  Mingqi LI ,  Cheng-Bai Xu

    IPC: G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/311 ,  C07C309/28

    Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

    METHODS OF FORMING ELECTRONIC DEVICES
    29.
    发明申请
    METHODS OF FORMING ELECTRONIC DEVICES 有权
    形成电子器件的方法

    公开(公告)号：US20160189953A1

    公开(公告)日：2016-06-30

    申请号：US14972522

    申请日：2015-12-17

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Jong Keun Park ,  Phillip D. Hustad ,  Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

    IPC: H01L21/02

    CPC classification number: H01L21/02359 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76826

    Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

    Abstract translation: 形成电子器件的方法包括：（a）提供在其表面上包括多孔特征的半导体衬底; （b）在多孔特征上施用组合物，其中所述组合物包含聚合物和溶剂，其中所述聚合物包含以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选地 取代二价芳基; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和（c）加热组合物; 其中所述聚合物设置在所述多孔特征的孔中。 该方法在用于形成低k和超低k电介质材料的半导体器件的制造中具有特别的适用性。

    PORE-FILL COMPOSITIONS
    30.
    发明申请
    PORE-FILL COMPOSITIONS 审中-公开
    PORE-FILL组合物

    公开(公告)号：US20160185984A1

    公开(公告)日：2016-06-30

    申请号：US14972529

    申请日：2015-12-17

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Jong Keun Park ,  Phillip D. Hustad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

    IPC: C09D5/34 ,  C09D161/16 ,  H01L21/02 ,  C09D171/12

    CPC classification number: C09D5/34 ,  C08G65/4012 ,  C08G65/4043 ,  C08G65/485 ,  C09D161/16 ,  C09D171/00 ,  C09D171/12 ,  H01B3/307 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343

    Abstract: A composition comprising a polymer and a solvent, wherein the polymer comprises: a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and an endcapping group that is free of polymerizable vinyl groups and hydroxyl groups. The compositions find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

    Abstract translation: 一种包含聚合物和溶剂的组合物，其中所述聚合物包含：以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选取代的二价芳族基团; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和不含可聚合乙烯基和羟基的封端基。 该组合物特别适用于制造用于形成低k和超低k电介质材料的半导体器件。

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