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    Solid state battery using a hydrogenated silicon nitride electrolyte
    25.
    发明授权
    Solid state battery using a hydrogenated silicon nitride electrolyte 失效
    使用氢化氮化硅电解质的固态电池

    公开(公告)号：US5552242A

    公开(公告)日：1996-09-03

    申请号：US530493

    申请日：1995-09-19

    申请人： Stanford R. Ovshinsky ,  Rosa Young

    发明人： Stanford R. Ovshinsky ,  Rosa Young

    IPC分类号： H01M4/48 ,  H01M4/52 ,  H01M4/58 ,  H01M6/18 ,  H01M6/40 ,  H01M10/04 ,  H01M10/34 ,  H01M10/36 ,  H01M10/02

    CPC分类号： H01M10/0562 ,  H01M10/0436 ,  H01M10/347 ,  H01M6/18 ,  H01M10/0525 ,  H01M4/485 ,  H01M4/52 ,  H01M4/587 ,  H01M6/188 ,  H01M6/40

    摘要： A solid state battery comprising a substrate; at least one multilayered electrochemical cell deposited onto the substrate, each layer of the multilayered electrochemical cell composing: a layer of negative electrode material capable of electrochemically adsorbing and desorbing ions during charge and discharge; a layer of positive electrode material capable of electrochemically desorbing and adsorbing ions during charge and discharge; and a layer of insulating/conducting material disposed between the layer of positive electrode material and the layer of negative electrode material, where the layer of insulating/conducting material is electrically insulating and capable of readily conducting or transposing ions from the layer positive electrode material to the layer of negative electrode material while the battery is charging and from the layer of negative electrode material to the layer of positive electrode material while the battery is discharging; and an electrically conductive layer deposited a top the last of the at least one multilayered electrochemical cells, the electrically conductive layer providing one battery terminal.

    摘要翻译： 一种固态电池，包括基板; 沉积在衬底上的至少一层多层电化学电池，多层电化学电池的每一层组成：在充电和放电期间能够电离吸附和解吸离子的负极材料层; 能够在充放电期间电化学解吸和吸附离子的正极材料层; 以及设置在正极材料层和负极材料层之间的绝缘/导电材料层，其中绝缘/导电材料层是电绝缘的并且能够容易地将离子从层正极材料导电或转置到 电池正在充电时的负极材料层，并且在电池放电时从负极材料层到正极材料层; 并且导电层在所述至少一个多层电化学电池中的最后一层沉积顶部，所述导电层提供一个电池端子。

    Continuous or semi-continuous laser ablation method for depositing fluorinated superconducting thin film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates
    26.
    发明授权
    Continuous or semi-continuous laser ablation method for depositing fluorinated superconducting thin film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates 失效
    用于沉积氟化超导薄膜的连续或半连续激光烧蚀方法，其具有沉积在非晶格匹配衬底上的单元电池的基面平面取向

    公开(公告)号：US5426092A

    公开(公告)日：1995-06-20

    申请号：US905159

    申请日：1992-06-25

    申请人： Stanford R. Ovshinsky ,  Rosa Young

    发明人： Stanford R. Ovshinsky ,  Rosa Young

    IPC分类号： C23C14/08 ,  C23C14/28 ,  H01L39/24 ,  H01B12/00 ,  B05D5/12

    CPC分类号： C23C14/087 ,  C23C14/28 ,  H01L39/2448 ,  Y10S505/729 ,  Y10S505/731 ,  Y10S505/78

    摘要： A thin film, high T.sub.c fluorinated, superconducting having a lattice structure differing from the lattice structure of the material substrate, such as sapphire or stainless steel, upon which it is grown. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducting material on the substrate. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities. Large area, irregularly shaped and rolls of inexpensive substrate material can be uniformly covered by the method described herein.

    摘要翻译： 具有与其生长在其上的材料基板（例如蓝宝石或不锈钢）的晶格结构不同的晶格结构的薄膜，高Tc氟化超导体。 超导材料的特征在于，即使衬底不具有钙钛矿晶格结构，其单元电池的基面平面取向也是如此。 激光烧蚀技术用于从目标材料的氟化丸粒蒸发材料以将氟化超导材料沉积在基底上。 本发明提供了一种沉积超导薄膜的低压和相对较低温度的方法，其特征在于（1）通常与多晶薄膜相关的最小数量的高角度晶界，以及（2）对准的a，b和c 轴的单元电池，以便提供增强的载流能力。 大面积，不规则形状和便宜的基材的卷可以通过本文所述的方法均匀地覆盖。

    Aqueous lithium-hydrogen ion rechargeable battery
    27.
    发明授权
    Aqueous lithium-hydrogen ion rechargeable battery 失效
    锂氢锂离子充电电池

    公开(公告)号：US5376475A

    公开(公告)日：1994-12-27

    申请号：US213788

    申请日：1994-03-16

    申请人： Stanford R. Ovshinsky ,  Rosa Young

    发明人： Stanford R. Ovshinsky ,  Rosa Young

    IPC分类号： H01M10/36 ,  H01M4/36 ,  H01M10/24

    CPC分类号： H01M10/36

    摘要： A rechargeable aqueous electrolyte lithium-hydrogen ion battery. The electrodes of the lithium-hydrogen battery electrode are formed from materials which reversibly intercalate both lithium and hydrogen ions. These materials can be represented by the general formula Li.sub.x H.sub.y (HOST), wherein HOST represents intercalation host matrices for said electrodes into which guest Li and H ions can be inserted, and x and y are the intercalation stoichiometries of lithium and hydrogen, respectively. Preferably, the intercalation host matrices of the electrodes are chosen from the group consisting of NiO.sub.2, CoO.sub.2, Mn.sub.2 O.sub.4, MnO.sub.2, VO.sub.2, V.sub.2 O.sub.5, TiS.sub.2, MoS.sub.2, MoO.sub.2, WO.sub.3, graphite, and electrochemical hydrogen storage metal alloy materials. Particularly useful combinations of host matrices are Mn.sub.2 O.sub.4 with VO.sub.2 or an electrochemical hydrogen storage metal alloy material and NiO.sub.2 with graphite or an electrochemical hydrogen storage metal alloy material.

    摘要翻译： 可充电电解液锂氢电池。 锂氢电池电极的电极由可逆地插入锂离子和氢离子的材料形成。 这些材料可以由通式LixHy（HOST）表示，其中HOST表示可插入客体Li和H离子的所述电极的插层主体基质，x和y分别是锂和氢的插层化学计量。 优选地，电极的插层主体基质选自由NiO 2，CoO 2，Mn 2 O 4，MnO 2，V 2 O，V 2 O 5，TiS 2，MoS 2，MoO 2，WO 3，石墨和电化学储氢金属合金材料组成的组。 主体基质的特别有用的组合是Mn2O4与VO2或电化学储氢金属合金材料，NiO 2与石墨或电化学储氢金属合金材料。

    High quality photovoltaic semiconductor material and laser ablation method of fabrication same
    29.
    发明授权
    High quality photovoltaic semiconductor material and laser ablation method of fabrication same 失效
    高品质光电半导体材料和激光烧蚀方法

    公开(公告)号：US5231047A

    公开(公告)日：1993-07-27

    申请号：US811159

    申请日：1991-12-19

    申请人： Stanford R. Ovshinsky ,  Xunming Deng ,  Rosa Young

    发明人： Stanford R. Ovshinsky ,  Xunming Deng ,  Rosa Young

    IPC分类号： H01L21/203 ,  H01L31/20

    CPC分类号： H01L31/202 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/093 ,  Y10S438/909

    摘要： A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10.sup.-8 and about 10.sup.-7, respectively; their density of defect states in the band gap thereof is less than about 1.times.10.sup.17 and about 2.times.10.sup.16 /cm.sup.3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material. From about 3 to about 7 atomic percent fluorine is added to the germanium and/or silicon alloy material so as to provide a strong bond (as compared to hydrogen) so as to provide reduced sensitivity to Stabler/Wronski degradation. The preferred method of fabricating such improved narrow band gap materials is through a laser ablation process in which hydrogen or fluorine gas is introduced for incorporation into the germanium or silicon host matrix, thereby eliminating the reliance on the zoo of precursor species present in r.f. or microwave plasma process.

    摘要翻译： 高质量，窄带隙，氢化无定形锗或非晶硅合金材料，其特征在于主体基体，其中所有氢分别以锗一氢化物或一硅化氢形式引入其中; 其非平衡电荷载流子的迁移寿命产物分别为约10-8和约10-7; 其带隙中缺陷状态的密度分别小于约1×10 17和约2×10 16 / cm 3; 它们的带隙分别为约1.5和约0.9eV。 还公开了由多个非常薄的氢化无定形锗和非晶硅合金材料层构成的结构，其每一层都配合以提供窄带隙材料。 约3至约7原子％的氟加入到锗和/或硅合金材料中以提供强键（与氢相比），以便降低对Stabler / Wronski降解的敏感性。 制造这种改进的窄带隙材料的优选方法是通过激光烧蚀工艺，其中引入氢或氟气以掺入到锗或硅主体基质中，从而消除了对r.f中存在的前体物质的动物园的依赖。 或微波等离子体处理。