公开(公告)号：US20220230604A1

公开(公告)日：2022-07-21

申请号：US17716263

申请日：2022-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihiro CHIDA

IPC: G09G5/36 ,  G09G5/00

Abstract: A display device whose aspect ratio can be changed is provided. The display device includes a plurality of display units and a plurality of driver circuit units. The plurality of display units each include a light-emitting portion and a connection region. The plurality of driver circuit units each include a driver circuit portion and a connection region. The connection regions of the adjacent units overlap with each other and one shaft passes through the connection regions. The adjacent units are electrically connected to each other with the one shaft. With such a structure, an angle between the adjacent units electrically connected to each other with one shaft can be changed, which enables the aspect ratio of the display device to be changed.

公开(公告)号：US20210055352A1

公开(公告)日：2021-02-25

申请号：US16980598

申请日：2019-03-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei TAKAHASHI ,  Koji KUSUNOKI ,  Toshiyuki ISA ,  Akihiro CHIDA ,  Ryo YAMAUCHI ,  Kazutaka KURIKI ,  Ryota TAJIMA

IPC: G01R31/36 ,  G01R31/378 ,  G01R31/392 ,  G01R31/3842 ,  H01M10/48 ,  H01M10/0525

Abstract: A control method of a secondary battery in which malfunction is less likely to occur and abnormality detection can be performed with high accuracy is provided. A charge state estimation device of a secondary battery including a device which generates electromagnetic noise, a first detection means which measures a voltage value of a secondary battery electrically connected to the device, a second detection means which measures a current value of the secondary battery electrically connected to the device, a correction means which extracts a causal relationship between electromagnetic noise and a driving pattern from data including multiple electromagnetic noise obtained using the first detection means or the second detection means, and an arithmetic means which calculates a charge rate using a regression model based on data after data correction.

公开(公告)号：US20210005939A1

公开(公告)日：2021-01-07

申请号：US16767637

申请日：2018-11-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota TAJIMA ,  Toshiyuki ISA ,  Akihiro CHIDA

IPC: H01M10/42 ,  B60L58/18 ,  G01R31/367

Abstract: A highly safe power storage system is provided. If n (n is an integer over or equal to three) secondary batteries are used in a vehicle such as an electric vehicle, a circuit configuration is used with which the condition of each secondary battery is monitored using an anomaly detection unit; and if an anomaly such as a micro-short circuit is detected, only the detected anomalous secondary battery is electrically separated from the charging system or the discharging system. At least one microcomputer monitors anomalies in n secondary batteries consecutively, selects the anomalous secondary battery or the detected secondary battery which causes an anomaly, and gives an instruction to bypass the secondary battery with each switch.

公开(公告)号：US20200153264A1

公开(公告)日：2020-05-14

申请号：US16627429

申请日：2018-07-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi OSADA ,  Akihiro CHIDA ,  Toshiyuki ISA ,  Kazutaka KURIKI

IPC: H02J7/00 ,  B60L50/64 ,  B60L58/10 ,  G01R31/367 ,  G01R31/389 ,  G01R31/387 ,  G06N3/04

Abstract: A power storage system having excellent characteristics is provided. A power storage system having high safety is provided. A power storage system with little degradation is provided. A storage battery having excellent characteristics is provided. A method of operating a power storage system including a storage battery, a first circuit having a function of measuring an impedance, and a neural network includes a first step of stopping charging or discharging of the storage battery, a second step of measuring an open circuit voltage of the storage battery, a third step of measuring an impedance of the storage battery, a fourth step of inputting the open circuit voltage and the impedance that are measured to the input layer, a fifth step of outputting a first signal from the output layer, a sixth step of changing a condition of charging or discharging of the storage battery in accordance with the first signal, and a seventh step of starting charging or discharging of the storage battery; the first signal corresponds to the estimated value of the discharge capacity of the storage battery.

公开(公告)号：US20180233690A1

公开(公告)日：2018-08-16

申请号：US15948223

申请日：2018-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihiro CHIDA

IPC: H01L51/52 ,  H01L27/12 ,  H01L33/48 ,  H01L33/20 ,  H01L51/56 ,  H01L33/00 ,  H01L51/00 ,  H01L27/32 ,  H01L33/62

CPC classification number: H01L51/5203 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3276 ,  H01L33/005 ,  H01L33/20 ,  H01L33/483 ,  H01L33/62 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

公开(公告)号：US20170084860A1

公开(公告)日：2017-03-23

申请号：US15259325

申请日：2016-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihiro CHIDA

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5203 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3276 ,  H01L33/005 ,  H01L33/20 ,  H01L33/483 ,  H01L33/62 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

公开(公告)号：US20160343781A1

公开(公告)日：2016-11-24

申请号：US15225120

申请日：2016-08-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuya KAWATA ,  Akihiro CHIDA

IPC: H01L27/32 ,  H01L51/52 ,  G06F1/16 ,  H01L51/00 ,  H01L51/56

Abstract: A display device, an electronic device, or a lighting device that is unlikely to be broken is provided. A flexible first substrate and a flexible second substrate overlap with each other with a display element provided therebetween. A flexible third substrate is bonded on the outer surface of the first substrate, and a flexible fourth substrate is bonded on the outer surface of the second substrate. The third substrate is formed using a material softer than the first substrate, and the fourth substrate is formed using a material softer than the second substrate.

公开(公告)号：US20160243812A1

公开(公告)日：2016-08-25

申请号：US15147020

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kayo KUMAKURA ,  Tomoya AOYAMA ,  Akihiro CHIDA ,  Kohei YOKOYAMA ,  Masakatsu OHNO ,  Satoru IDOJIRI ,  Hisao IKEDA ,  Hiroki ADACHI ,  Yoshiharu HIRAKATA ,  Shingo EGUCHI ,  Yasuhiro JINBO

IPC: B32B43/00 ,  H01L21/67 ,  H01L51/56

CPC classification number: B32B43/006 ,  B26D1/04 ,  B26D2001/006 ,  B32B38/10 ,  B32B2457/00 ,  G02B6/00 ,  H01L21/67092 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L2221/68327 ,  H01L2227/323 ,  H01L2251/5338 ,  Y10T156/1126 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1933 ,  Y10T156/1944 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.

公开(公告)号：US20160190512A1

公开(公告)日：2016-06-30

申请号：US14980266

申请日：2015-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihiro CHIDA

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5237 ,  H01L51/003 ,  H01L51/5246

Abstract: A novel functional panel is provided. The functional panel includes a first substrate, a second substrate, a first layer, a second layer, a sealing portion, and a first adhesive layer. The sealing portion is between the first layer and the second layer. The first adhesive layer is between the first layer and the first substrate. The second substrate is in contact with the second layer. When a surface of the first layer which faces the first substrate is referred to as a first surface and a surface of the second layer which is in contact with the second substrate is referred to as a second surface, the functional panel has a plurality of regions having different distances between the first surface and the second surface.

Abstract translation: 提供了一个新颖的功能面板。 功能面板包括第一基板，第二基板，第一层，第二层，密封部分和第一粘合剂层。 密封部分在第一层和第二层之间。 第一粘合剂层位于第一层和第一衬底之间。 第二基板与第二层接触。 将面向第一基板的第一层的表面称为第一表面，将与第二基板接触的第二层的表面称为第二表面时，功能面板具有多个区域 在第一表面和第二表面之间具有不同的距离。

公开(公告)号：US20150194448A1

公开(公告)日：2015-07-09

申请号：US14597548

申请日：2015-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihiro CHIDA

IPC: H01L27/12

CPC classification number: H01L27/1244 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1266 ,  H01L2227/323 ,  H01L2227/326

Abstract: An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.

Abstract translation: 本发明的目的是提供一种半导体器件的制造方法，其中由于在半导体器件中发生的裂纹引起的特性缺陷降低。 在半导体元件的周围设置由金属膜形成的裂纹抑制层，可以抑制从基板的外周发生的裂纹，并减少对半导体元件的损伤。 此外，即使半导体器件在分离和转置步骤中受到来自外周的物理力的影响，也可以通过裂纹抑制层来抑制裂纹向半导体器件的进展（生长）。