公开(公告)号：US20130099237A1

公开(公告)日：2013-04-25

申请号：US13651809

申请日：2012-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuhei SATO ,  Yuta ENDO

IPC: H01L21/477 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

公开(公告)号：US20250063762A1

公开(公告)日：2025-02-20

申请号：US18936334

申请日：2024-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20190341495A1

公开(公告)日：2019-11-07

申请号：US16513826

申请日：2019-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20190035937A1

公开(公告)日：2019-01-31

申请号：US16024967

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20180277392A1

公开(公告)日：2018-09-27

申请号：US15991080

申请日：2018-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

IPC: H01L21/40 ,  H01L21/324 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L21/383 ,  H01L21/477 ,  H01L27/12

CPC classification number: H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

公开(公告)号：US20180151743A1

公开(公告)日：2018-05-31

申请号：US15865308

申请日：2018-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20160172500A1

公开(公告)日：2016-06-16

申请号：US14963945

申请日：2015-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Yuhei SATO ,  Kazuhiro TSUTSUI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

Abstract translation: 提供具有稳定电特性的晶体管。 晶体管包括在衬底上的第一绝缘体; 第一绝缘子上的第一至第三绝缘体; 在所述第三氧化物绝缘体上的第二绝缘体; 第二绝缘体上的第一导体; 以及在第一导体上的第三绝缘体。 每个第一和第二氧化物绝缘体的导带最小值的能级比氧化物半导体的能级更接近真空度。 第三氧化物绝缘体的导带最小值的能级比第二氧化物绝缘体的能级更接近真空度。 第一绝缘体包含氧。 通过热解吸光谱测定从第一绝缘体释放的氧分子的数量大于或等于1E14分子/ cm 2且小于或等于1E16分子/ cm 2。

公开(公告)号：US20140186998A1

公开(公告)日：2014-07-03

申请号：US14199222

申请日：2014-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Naoto YAMADE ,  Kyoko YOSHIOKA ,  Yuhei SATO ,  Mari TERASHIMA

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02667 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

Abstract translation: 提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。 提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域，以及设置在所述非晶氧化物半导体层上的氧化铝膜。 无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理 在低于或等于450℃的温度下

公开(公告)号：US20130126861A1

公开(公告)日：2013-05-23

申请号：US13675140

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Erika TAKAHASHI ,  Yuki IMOTO ,  Yuhei SATO

IPC: H01L29/786 ,  H01L21/36

CPC classification number: H01L29/7869 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  Y10T428/24628

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract translation: 在含锆的氧化物绝缘膜中形成低密度的非晶区域。 通过加热从含氧锆的氧化物绝缘膜释放的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。 当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。

公开(公告)号：US20210320212A1

公开(公告)日：2021-10-14

申请号：US17358295

申请日：2021-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.