公开(公告)号：US20200020520A1

公开(公告)日：2020-01-16

申请号：US16476415

申请日：2018-01-11

Applicant: Soitec

Inventor： Patrick Reynaud ,  Marcel Broekaart ,  Frederic Allibert ,  Christelle Veytizou ,  Luciana Capello ,  Isabelle Bertrand

IPC: H01L21/02 ,  H01L21/762

Abstract: A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns positioned on the first insulating layer.

公开(公告)号：US20190088462A1

公开(公告)日：2019-03-21

申请号：US15743004

申请日：2016-07-13

Applicant: Soitec

Inventor： Pascal Guenard ,  Marcel Broekaart ,  Thierry Barge

IPC: H01L21/02 ,  H01L41/083 ,  H01L41/312 ,  H01L41/187

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

公开(公告)号：US20180130698A1

公开(公告)日：2018-05-10

申请号：US15803447

申请日：2017-11-03

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Isabelle Bertrand ,  Luciana Capello ,  Marcel Broekaart

IPC: H01L21/762 ,  H01L21/324 ,  H01L27/12 ,  H01L21/02 ,  C30B29/06

CPC classification number: H01L21/02337 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/02123 ,  H01L21/02255 ,  H01L21/02296 ,  H01L21/02381 ,  H01L21/2686 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/76243 ,  H01L21/76251 ,  H01L21/76254 ,  H01L27/1203

Abstract: A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C.

公开(公告)号：US09548202B2

公开(公告)日：2017-01-17

申请号：US14434624

申请日：2013-10-11

Applicant: Soitec

Inventor： Marcel Broekaart ,  Arnaud Castex

IPC: B32B37/00 ,  H01L21/18 ,  B32B37/10

CPC classification number: H01L21/187 ,  B32B37/0007 ,  B32B37/1009 ,  B32B2037/0092 ,  B32B2307/20 ,  B32B2457/14

Abstract: The disclosure relates to a method of bonding by molecular adhesion comprising the positioning of a first wafer and of a second wafer within a hermetically sealed vessel, the evacuation of the vessel to a first pressure lower than or equal to 400 hPa, the adjustment of the pressure in the vessel to a second pressure higher than the first pressure by introduction of a dry gas, and bringing the first and second wafers into contact, followed by the initiation of the propagation of a bonding wave between the two wafers, while maintaining the vessel at the second pressure.

Abstract translation: 本发明涉及一种通过分子粘合进行粘合的方法，包括将第一晶片和第二晶片定位在密封容器内，将容器排空至低于或等于400hPa的第一压力， 通过引入干燥气体将容器中的压力升至高于第一压力的第二压力，并使第一和第二晶片接触，随后在两个晶片之间引起粘结波的传播，同时保持容器 在第二个压力。

公开(公告)号：US20160358805A1

公开(公告)日：2016-12-08

申请号：US15170532

申请日：2016-06-01

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/762 ,  H01L21/48 ,  H01L23/13 ,  H01L21/56 ,  H01L23/15

CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

Abstract translation: 本公开涉及用于机械分离层的方法，特别是在双层转移工艺中。 本公开更具体地涉及用于机械分离层的方法，包括以下步骤：提供包括手柄衬底层和活性层的半导体化合物，其具有与前主侧相对的前主侧和后主侧， 其中所述手柄基板的所述层附着到所述有源层的前主侧，然后在所述有源层的所述后主侧上提供载体基板层，然后开始所述手柄基板的所述层的机械分离， 其中所述手柄基板的层和所述载体基板的层设置有基本对称的机械结构。

公开(公告)号：US20250140603A1

公开(公告)日：2025-05-01

申请号：US19010679

申请日：2025-01-06

Applicant: Soitec

Inventor： Marcel Broekaart ,  Arnaud Castex

IPC: H01L21/762

Abstract: A method for fabricating a semiconductor-on-insulator structure involves providing a donor substrate comprising a weakened zone delimiting a layer to be transferred, providing a receiver substrate, and bonding the donor substrate to the receiver substrate. The layer to be transferred is located on the bonding-interface side. A bonding wave is initiated at a first region on the periphery of the interface, and the wave is propagated toward a second region on the periphery of the interface opposite the first region. The difference in speed of propagation of the bonding wave between a central portion of the interface and a peripheral portion of the interface is controlled such that the speed of propagation of the bonding wave is lower in the central portion than in the peripheral portion. The donor substrate is detached along the weakened zone to transfer the layer to be transferred to the receiver substrate.

公开(公告)号：US12165900B2

公开(公告)日：2024-12-10

申请号：US18359807

申请日：2023-07-26

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US20240040930A1

公开(公告)日：2024-02-01

申请号：US18485899

申请日：2023-10-12

Applicant: Soitec

Inventor： Marcel Broekaart

IPC: H10N30/072 ,  H03H9/02 ,  H03H3/10 ,  H10N30/00

CPC classification number: H10N30/072 ,  H03H9/02574 ,  H03H3/10 ,  H03H9/02543 ,  H10N30/1051 ,  H10N30/10516

Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a first free surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer, wherein the useful layer comprises an area of nanocavities.

公开(公告)号：US20240021461A1

公开(公告)日：2024-01-18

申请号：US18359807

申请日：2023-07-26

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/6835

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US11837463B2

公开(公告)日：2023-12-05

申请号：US17095550

申请日：2020-11-11

Applicant: Soitec

Inventor： Pascal Guenard ,  Marcel Broekaart ,  Thierry Barge

IPC: H01L21/02 ,  H10N30/50 ,  H10N30/072 ,  H10N30/853 ,  H03H9/02

CPC classification number: H01L21/02002 ,  H01L21/02367 ,  H01L21/02436 ,  H10N30/072 ,  H10N30/50 ,  H10N30/8542 ,  H03H9/02574

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.