公开(公告)号：US10535767B2

公开(公告)日：2020-01-14

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/32 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20190097127A1

公开(公告)日：2019-03-28

申请号：US16201264

申请日：2018-11-27

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: H01L43/12 ,  H01L43/08 ,  G01R33/02 ,  G01R33/09

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US20180061982A1

公开(公告)日：2018-03-01

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/36 ,  H01L29/66 ,  H01L21/3063 ,  H01L21/265 ,  H01L21/308 ,  H01L21/02 ,  H01L29/08 ,  H01L21/762 ,  H03K17/687

CPC classification number: H01L29/7827 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66128 ,  H01L29/66666 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/8611 ,  H03K17/687

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US09007806B2

公开(公告)日：2015-04-14

申请号：US13782263

申请日：2013-03-01

Applicant: STMicroelectronics S.r.l.

Inventor： Alberto Pagani ,  Marco Morelli ,  Giulio Ricotti

IPC: G11C11/00 ,  G11C23/00 ,  H01H1/00 ,  G11C11/50 ,  H01H59/00 ,  H01H1/52 ,  G11C7/02 ,  G11C7/10 ,  G11C7/12 ,  G11C5/00 ,  G11C29/12 ,  G11C29/04

CPC classification number: G11C23/00 ,  G11C5/005 ,  G11C7/02 ,  G11C7/1048 ,  G11C7/12 ,  G11C11/50 ,  G11C29/12 ,  G11C2029/0409 ,  H01H1/0036 ,  H01H1/52 ,  H01H59/0009

Abstract: An electromechanical memory element includes a fixed body and a deformable element attached to the fixed body. An actuator causes a deformation of the deformable element from a first position (associated with a first logic state) to a second position (associated with a second logic state) where a mobile element makes contact with a fixed element. A programming circuit then causes a weld to be formed between the mobile element and the fixed element. The memory element is thus capable of associating the first and second positions with two different logic states. The weld may be selectively dissolved to return the deformable element back to the first position.

Abstract translation: 机电存储元件包括固定体和附接到固定体的可变形元件。 致动器使可变形元件从第一位置（与第一逻辑状态相关联）变形到移动元件与固定元件接触的第二位置（与第二逻辑状态相关联）。 然后编程电路在可移动元件和固定元件之间形成焊缝。 因此，存储元件能够将第一和第二位置与两个不同的逻辑状态相关联。 可以选择性地溶解焊缝以将可变形元件返回到第一位置。