公开(公告)号：US10276729B2

公开(公告)日：2019-04-30

申请号：US15671615

申请日：2017-08-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna′

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L21/225 ,  H01L21/768 ,  H01L23/535 ,  H01L29/20

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US09911810B2

公开(公告)日：2018-03-06

申请号：US15421100

申请日：2017-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simona Lorenti ,  Cateno Marco Camalleri ,  Mario Giuseppe Saggio ,  Ferruccio Frisina

IPC: H01L29/78 ,  H01L29/10 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3065 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861 ,  H01L29/872 ,  H01L29/04

CPC classification number: H01L21/3247 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/324 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases.

公开(公告)号：US09711599B2

公开(公告)日：2017-07-18

申请号：US14735679

申请日：2015-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna ,  Fabrizio Roccaforte

IPC: H01L29/66 ,  H01L29/45 ,  H01L29/16 ,  H01L29/872 ,  H01L29/417 ,  H01L21/04 ,  H01L29/47 ,  H01L29/06 ,  H01L29/861

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872

Abstract: A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.

公开(公告)号：US09607859B2

公开(公告)日：2017-03-28

申请号：US14788685

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simona Lorenti ,  Cateno Marco Camalleri ,  Mario Giuseppe Saggio ,  Ferruccio Frisina

IPC: H01L29/76 ,  H01L29/94 ,  H01L21/324 ,  H01L27/088 ,  H01L21/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L21/3065 ,  H01L29/73 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L21/3247 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/324 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases.

公开(公告)号：US20130149838A1

公开(公告)日：2013-06-13

申请号：US13749526

申请日：2013-01-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Domenico Murabito ,  Letterio Fiore ,  Giuseppe Morale

IPC: H01L21/762

CPC classification number: H01L21/762 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3247 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/42376 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

Abstract: A process for manufacturing a semiconductor device envisages the steps of: providing a semiconductor material body having at least one deep trench that extends through said body of semiconductor material starting from a top surface thereof; and filling the deep trench via an epitaxial growth of semiconductor material, thereby forming a columnar structure within the body of semiconductor material. The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench; in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.

Abstract translation: 制造半导体器件的方法设想的步骤是：提供具有至少一个深沟槽的半导体材料体，该深沟槽从其顶表面开始延伸穿过半导体材料体; 并通过半导体材料的外延生长填充深沟槽，由此在半导体材料体内形成柱状结构。 制造工艺进一步设想通过正在进行外延生长的半导体材料的同时化学蚀刻来调制外延生长的步骤，从而获得没有深沟槽空隙的紧密填充物; 特别地，将蚀刻气体流引入到与外延生长相同的反应环境中，其中为相同的外延生长提供源气体的流动。

公开(公告)号：US12255233B2

公开(公告)日：2025-03-18

申请号：US17579474

申请日：2022-01-19

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe Saggio ,  Alessia Maria Frazzetto ,  Edoardo Zanetti ,  Alfio Guarnera

IPC: H01L21/00 ,  H01L21/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

公开(公告)号：US12249634B2

公开(公告)日：2025-03-11

申请号：US17669239

申请日：2022-02-10

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Mario Giuseppe Saggio ,  Alfio Guarnera ,  Cateno Marco Camalleri

IPC: H01L29/423 ,  H01L29/16 ,  H01L29/40 ,  H01L29/43 ,  H01L29/66 ,  H01L29/78

Abstract: A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conductivity type, extends in the body from the first face, and a source region, having the first conductivity type, extends to the inside of the body region from the first face of the body. An insulated gate region extends on the first face of the body and comprises a gate conductive region. An annular connection region, of conductive material, is formed within a surface edge structure extending on the first face of the body, in the peripheral zone. The gate conductive region and the annular connection region are formed by a silicon layer and by a metal silicide layer overlying the silicon layer.

公开(公告)号：US11869771B2

公开(公告)日：2024-01-09

申请号：US17458102

申请日：2021-08-26

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuna′ ,  Mario Giuseppe Saggio

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L21/045 ,  H01L29/1608 ,  H01L29/66053

Abstract: A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body.

公开(公告)号：US20170358690A1

公开(公告)日：2017-12-14

申请号：US15671615

申请日：2017-08-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L29/872 ,  H01L23/535 ,  H01L21/768 ,  H01L29/417 ,  H01L21/225 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L21/2253 ,  H01L21/76897 ,  H01L23/535 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66143

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US20150372093A1

公开(公告)日：2015-12-24

申请号：US14735679

申请日：2015-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna ,  Fabrizio Roccaforte

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L21/04 ,  H01L29/47 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872

Abstract: A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.

Abstract translation: 诸如势垒接合肖特基二极管的开关器件具有第一导电类型的碳化硅壳体，其具有第二导电类型的开关区域。 切换区域从主体的顶表面延伸并限定它们之间的主体表面部分。 具有均匀的化学 - 物理特性的接触金属层在主体的顶表面上延伸并直接接触，并与主体的表面部分和欧姆接触金属部分形成肖特基接触金属部分与开关区域。 接触金属层通过在体上沉积镍或钴层并进行热处理以使金属与体的半导体材料反应并形成硅化物而形成。