公开(公告)号：US09793377B2

公开(公告)日：2017-10-17

申请号：US14808769

申请日：2015-07-24

Applicant: Samsung Display Co., Ltd.

Inventor： Je Hun Lee ,  Jun Ho Song ,  Yun Jong Yeo ,  Hwa Dong Jung

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/40 ,  H01L21/28 ,  H01L21/268 ,  H01L21/308 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H01L29/08 ,  H01L29/86

CPC classification number: H01L29/66742 ,  H01L21/02205 ,  H01L21/2686 ,  H01L21/28247 ,  H01L21/3086 ,  H01L27/1214 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/86

Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

公开(公告)号：US12193296B2

公开(公告)日：2025-01-07

申请号：US17717554

申请日：2022-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Eok Shin ,  Do Keun Song ,  Dong Min Lee ,  Joon Yong Park ,  Hyun Ah Sung ,  Yun Jong Yeo ,  Dae Won Choi

IPC: H10K59/131

Abstract: A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

公开(公告)号：US12074175B2

公开(公告)日：2024-08-27

申请号：US17822751

申请日：2022-08-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sungwon Cho ,  Yu-Gwang Jeong ,  Daewon Choi ,  Seon-Il Kim ,  Subin Bae ,  Yun Jong Yeo

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/78648

Abstract: A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

公开(公告)号：US11744120B2

公开(公告)日：2023-08-29

申请号：US17212046

申请日：2021-03-25

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Min Cho ,  Tae Sung Kim ,  Yun Jong Yeo ,  Ji Youn Nam ,  Hee Min Yoo

IPC: H01L27/32 ,  H01L51/56 ,  H10K59/124 ,  H10K59/122 ,  H10K59/123 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/122 ,  H10K59/123 ,  H10K71/00 ,  H10K59/1201

Abstract: A manufacturing method of a display device includes: forming a transistor on a substrate; forming an organic insulating layer on the transistor; and performing a plasma treatment on the organic insulating layer. The organic insulating layer includes an acryl-based polymer, and the plasma treatment is performed by using helium gas or argon gas.

公开(公告)号：US11552279B2

公开(公告)日：2023-01-10

申请号：US16900294

申请日：2020-06-12

Applicant: Samsung Display Co., Ltd.

Inventor： Tae Sung Kim ,  Hyun Min Cho ,  Yun Jong Yeo

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: A display device includes: a first substrate; a barrier layer on the first substrate; an optical pattern layer on the barrier layer, and including a light blocking pattern, and a plurality of light transmitting patterns penetrating the light blocking pattern in a first direction; a first thin film transistor layer on the optical pattern layer; a light emitting element layer on the first thin film transistor layer; and a fingerprint sensor layer underneath the first substrate to receive light reflected from an external object.

公开(公告)号：US10908453B2

公开(公告)日：2021-02-02

申请号：US15399361

申请日：2017-01-05

Applicant: Samsung Display Co., Ltd.

Inventor： Kang Soo Han ,  Yun Jong Yeo ,  Dong Uk Kim ,  Hyun Min Cho ,  Hyung Bin Cho ,  Ji Hun Kim ,  Sung Won Cho ,  Young Min Kim ,  Hae Il Park ,  Seung Jin Baek ,  Dae Young Lee ,  Kun Hee Jo ,  Gug Rae Jo

IPC: G02F1/1335 ,  G02F1/13357

Abstract: A display device includes a first substrate, a first wavelength conversion layer and a second wavelength conversion layer disposed on the first substrate and spaced apart from each other, and a polarization layer disposed on the first wavelength conversion layer and the second wavelength conversion layer, the polarization layer including a reflection portion and a transmitting portion, in which the reflection portion overlaps a gap formed between the first wavelength conversion layer and the second wavelength conversion layer.

公开(公告)号：US09830033B2

公开(公告)日：2017-11-28

申请号：US14925439

申请日：2015-10-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Ha Son ,  Jae Neung Kim ,  Yong-Hwan Ryu ,  Yun Jong Yeo ,  Joo Hyung Lee ,  Yu-Gwang Jeong

IPC: G06F3/044 ,  G06F3/041

CPC classification number: G06F3/044 ,  G06F3/0416 ,  G06F2203/04102 ,  G06F2203/04103

Abstract: A touch sensor includes a touch substrate including a touch sensing area and a non-sensing area outside the touch sensing area, touch electrodes disposed in the touch sensing area and configured to sense a touch, and touch wiring connected to the touch electrodes in the non-sensing area, in which the touch wiring includes a first wiring conductive layer, a second wiring conductive layer disposed on the first wiring conductive layer, and transparent layers disposed at first and second sides of the second wiring conductive layer and on the first wiring conductive layer.

公开(公告)号：US09093540B2

公开(公告)日：2015-07-28

申请号：US13683468

申请日：2012-11-21

Applicant: Samsung Display Co., Ltd.

Inventor： Je Hun Lee ,  Jun Ho Song ,  Yun Jong Yeo ,  Hwa Dong Jung

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/86

CPC classification number: H01L29/66742 ,  H01L21/02205 ,  H01L21/2686 ,  H01L21/28247 ,  H01L21/3086 ,  H01L27/1214 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/86

Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region include an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

Abstract translation: 本发明涉及薄膜晶体管，薄膜晶体管阵列面板及其制造方法。 根据本发明的示例性实施例的薄膜晶体管包括：栅电极; 位于栅极电极上或下方的栅极绝缘层; 与所述栅电极重叠的沟道区，位于所述沟道区与所述栅电极之间的所述栅绝缘层; 以及源极区域和漏极区域，其相对于沟道区域彼此面对，位于与沟道区域相同的层中，并且连接到沟道区域，其中沟道区域，源极区域和漏极区域包括 氧化物半导体，其中源极区域和漏极区域的载流子浓度大于沟道区域的载流子浓度。

公开(公告)号：US20140175441A1

公开(公告)日：2014-06-26

申请号：US13927781

申请日：2013-06-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hong-Kee CHIN ,  Yun Jong Yeo ,  Sang Gab Kim ,  Jung-Suk Bang ,  Byeong Hoon Cho

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1446 ,  H01L31/03765 ,  H01L31/1136 ,  H01L31/204

Abstract: A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.

Abstract translation: 薄膜晶体管阵列面板包括基板，绝缘层，第一半导体和第二半导体。 绝缘层设置在基板上并且包括台阶部分。 第一半导体设置在绝缘层上。 第二半导体设置在绝缘层上，并且包括与第一半导体不同的半导体材料。 台阶部分与第一半导体的边缘间隔开。