Display device
    1.
    发明授权

    公开(公告)号:US11380753B2

    公开(公告)日:2022-07-05

    申请号:US16899782

    申请日:2020-06-12

    IPC分类号: H01L27/32 H01L51/00

    摘要: A display device includes a base substrate; an organic layer disposed on the base substrate; and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films include a first conductive film disposed directly on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has an oxygen concentration higher than an oxygen concentration of the second conductive film.

    Thin film transistor array panel
    3.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US09455333B2

    公开(公告)日:2016-09-27

    申请号:US14809830

    申请日:2015-07-27

    摘要: A thin film transistor array panel includes a substrate, a light blocking film disposed on the substrate, a buffer layer covering the light blocking film, and a channel region disposed on the buffer layer. A source region and a drain region are disposed in the same layer as the channel region. A gate insulating layer is disposed on the channel region, and a gate electrode overlaps the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. A passivation layer is disposed on the gate electrode, the source region, the drain region, and the buffer layer. A source electrode and a drain electrode are disposed on the passivation layer, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than in the channel region.

    摘要翻译: 薄膜晶体管阵列面板包括衬底,设置在衬底上的遮光膜,覆盖遮光膜的缓冲层和设置在缓冲层上的沟道区。 源极区域和漏极区域设置在与沟道区域相同的层中。 栅极绝缘层设置在沟道区上,并且栅电极与沟道区重叠,栅极绝缘层介于栅电极和沟道区之间。 钝化层设置在栅电极,源极区,漏极区和缓冲层上。 源电极和漏极设置在钝化层上,其中沟道区,源区和漏区包括氧化物半导体,并且其中源极区和漏极区的载流子浓度大于 渠道区域。

    Display device
    4.
    发明授权

    公开(公告)号:US11984537B2

    公开(公告)日:2024-05-14

    申请号:US17188783

    申请日:2021-03-01

    摘要: A display device includes a substrate; a first circuit part and a second circuit part on the substrate and spaced from each other in a first direction; and an emission part between the first circuit part and the second circuit part, the emission part being located between the first circuit part and the second circuit part in a direction parallel to the substrate, wherein the first circuit part includes a first electrode extending to the emission part, wherein the second circuit part includes a second electrode extending to the emission part, and wherein the emission part includes a light emitting element located between the first electrode and the second electrode.

    Display substrate, method of manufacturing the same, and display device including the same

    公开(公告)号:US11462574B2

    公开(公告)日:2022-10-04

    申请号:US16896146

    申请日:2020-06-08

    摘要: A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

    Thin film transistor array panel
    7.
    再颁专利

    公开(公告)号:USRE48290E1

    公开(公告)日:2020-10-27

    申请号:US16130107

    申请日:2018-09-13

    摘要: A thin film transistor array panel includes a substrate, a light blocking film disposed on the substrate, a buffer layer covering the light blocking film, and a channel region disposed on the buffer layer. A source region and a drain region are disposed in the same layer as the channel region. A gate insulating layer is disposed on the channel region, and a gate electrode overlaps the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. A passivation layer is disposed on the gate electrode, the source region, the drain region, and the buffer layer. A source electrode and a drain electrode are disposed on the passivation layer, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than in the channel region.

    Display device
    10.
    发明授权

    公开(公告)号:US10768463B2

    公开(公告)日:2020-09-08

    申请号:US15814623

    申请日:2017-11-16

    摘要: Provided herein may be a display device. The display device may include a first substrate including a first substrate having a plurality of pixel areas; a second substrate having a second base substrate facing the first substrate, first to third color filters provided on the second base substrate, the first to third color filters being respectively disposed on locations corresponding to respective pixel areas of the plurality of pixel areas and embodying different colors, and an infrared sensor disposed between the plurality of pixel areas in a plan view and configured to sense infrared light; a liquid crystal layer disposed between the first substrate and the second substrate; and a backlight unit configured to provide single-color light to the liquid crystal layer. At least one of the first to third color filters may include infrared quantum dot material which converts light provided from the backlight unit into infrared light.