公开(公告)号：US20210235541A1

公开(公告)日：2021-07-29

申请号：US17059560

申请日：2019-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong SEOL ,  Jiyong CHO ,  Dongwoo KIM ,  Taeseok LEE ,  Jiho SON ,  Janghoon LEE

IPC: H04W76/50 ,  H04W4/90 ,  H04W8/18 ,  H04W76/15

Abstract: Various embodiments of the present invention provide a method and apparatus for an emergency call connection by an electronic device. An electronic device according to various embodiments of the present invention may comprise: a first wireless communication circuit for communicating with a first network; a second wireless communication circuit for communicating with a second network; and a processor, wherein the processor: detects a trigger for an emergency call connection; in response to the trigger, initiates the emergency call connection on the basis of the first wireless communication circuit and the second wireless communication circuit; determines priorities of the first and the second wireless communication circuit; and performs the emergency call connection by using a wireless communication circuit determined according to the determined priorities. Various embodiments are possible.

公开(公告)号：US20210100049A1

公开(公告)日：2021-04-01

申请号：US16934396

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwoo KIM ,  Hyunchul LEE ,  Sungjun KIM

IPC: H04W76/15 ,  H04W8/08

Abstract: An electronic device is provided. The electronic device includes: wireless communication circuitry, at least one processor operatively connected with the wireless communication circuitry, and a memory operatively connected with the at least one processor. The memory stores instructions which, when executed, cause the at least one processor to control the electronic device to: identify a state of the electronic device, receive a system information block (SIB) from a first base station supporting a first cellular network via the wireless communication circuitry, identify whether a network to which the electronic device belongs supports dual connectivity (DC) between the first cellular network and a second cellular network based on information included in the SIB, enable a second cellular network function of the wireless communication circuitry based on the network supporting the DC, and transmit information indicating that the second cellular network function of the electronic device is enabled to the network via the wireless communication circuitry.

公开(公告)号：US20200150387A1

公开(公告)日：2020-05-14

申请号：US16655520

申请日：2019-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwoo KIM ,  Changhan KIM

IPC: G02B13/00 ,  G02B5/20 ,  G01C3/08 ,  G02B9/34 ,  H04N5/235 ,  H04N5/225 ,  H04N5/232 ,  G06T7/586 ,  G06K9/00

Abstract: According to one embodiments, a lens assembly may include: at least four lenses sequentially arranged along an optical axis from a subject to an image sensor. Among the at least four lenses, a first lens disposed closest to the subject may have a visible light transmittance ranging from 0% to 5%, and, among subject-side surfaces and image-sensor-side surfaces of remaining lenses other than the first lens, at least four surfaces may include an inflection point. The lens assembly or an electronic device including the lens assembly may be variously implemented according to embodiments.

公开(公告)号：US20160359020A1

公开(公告)日：2016-12-08

申请号：US15131611

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin CHOI ,  Dongwoo KIM ,  Chang Woo SOHN ,  Youngmoon CHOI

IPC: H01L29/66 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/161 ,  H01L29/165

CPC classification number: H01L29/66795 ,  H01L21/3065 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method for manufacturing a semiconductor device includes forming a fin structure extending in a first direction on a substrate, forming a sacrificial gate pattern extending in a second direction to intersect the fin structure, forming a gate spacer layer covering the fin structure and the sacrificial gate pattern, providing a first ion beam having a first incident angle range and a second ion beam having a second incident angle range to the substrate, patterning the gate spacer layer using the first ion beam and the second ion beam to form gate spacers on sidewalls of the sacrificial gate pattern, forming source/drain regions at both sides of the sacrificial gate patterns, and replacing the sacrificial gate pattern with a gate electrode.

Abstract translation: 一种制造半导体器件的方法包括：形成在衬底上沿第一方向延伸的翅片结构，形成沿第二方向延伸以与鳍结构相交的牺牲栅极图案，形成覆盖鳍结构的栅极间隔层和牺牲栅极 提供具有第一入射角范围的第一离子束和具有第二入射角范围的第二离子束到衬底，使用第一离子束和第二离子束来构图栅极间隔层，以在第二离子束的侧壁上形成栅极间隔 牺牲栅极图案，在牺牲栅极图案的两侧形成源极/漏极区域，以及用栅极电极代替牺牲栅极图案。

公开(公告)号：US20140162440A1

公开(公告)日：2014-06-12

申请号：US14082657

申请日：2013-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Ho Kim ,  Daehyun JANG ,  Myoungbum LEE ,  Kihyun HWANG ,  Sangryol YANG ,  Yong-Hoon SON ,  Ju-Eun KIM ,  Sunghae LEE ,  Dongwoo KIM ,  JinGyun KIM

IPC: H01L27/115 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/324 ,  H01L27/11551 ,  H01L27/11578 ,  H01L29/7926

Abstract: Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.

Abstract translation: 可以提供形成半导体器件的方法。 形成半导体器件的方法可以包括图案化第一和第二材料层以形成暴露衬底的第一穿透区域。 该方法可以包括在衬底上的第一至区域中以及在第一和第二材料层的侧壁上形成第一半导体层。 在一些实施例中，该方法可以包括形成填充第一半导体层上的第一通过区域的掩埋层。 在一些实施例中，该方法可以包括移除掩埋层的一部分以在第一和第二材料层的侧壁之间形成第二穿透区域。 此外，该方法可以包括在第二通过区域中形成第二半导体层。

公开(公告)号：US20240021704A1

公开(公告)日：2024-01-18

申请号：US18176170

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmoon LEE ,  Jinbum KIM ,  Dongwoo KIM ,  Hyojin KIM ,  Yongjun NAM ,  Ingeon HWANG

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/775 ,  H01L29/423 ,  H01L27/092

CPC classification number: H01L29/66545 ,  H01L29/78696 ,  H01L29/0673 ,  H01L21/823807 ,  H01L29/775 ,  H01L29/66439 ,  H01L29/42392 ,  H01L29/78687 ,  H01L27/092

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern including a plurality of semiconductor patterns spaced apart from each other and vertically stacked, on the active pattern, a source/drain pattern connected to the plurality of semiconductor patterns, and a gate electrode including a first inner electrode provided below a first semiconductor pattern among the plurality of semiconductor patterns, on the plurality of semiconductor patterns, and a second inner electrode provided above the first semiconductor pattern, the first semiconductor pattern includes a first portion adjacent to the first inner electrode, a second portion adjacent to the second inner electrode, and a third portion between the first and second portions, the first semiconductor pattern includes a dopant having an atomic weight greater than that of silicon, and a dopant concentration of the third portion is smaller than a dopant concentration of each of the first and second portions.

公开(公告)号：US20230057061A1

公开(公告)日：2023-02-23

申请号：US17722630

申请日：2022-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyeong SEOK ,  Dongwoo KIM ,  Hosin SONG ,  Jonghyeon CHANG

IPC: H01L23/00 ,  H01L25/10 ,  H01L25/065 ,  H01L23/538

Abstract: A semiconductor chip that includes a chip body that has a first side surface, a second side surface, a third side surface, and a fourth side surface; a central region at a central portion of the chip body; and a peripheral region at a peripheral portion of the chip body and adjacent to at least one of the first side surface to the fourth side surface, wherein the peripheral region includes a first unit region that includes a plurality of first bumps of a first bump density, and a second unit region that includes a plurality of second bumps of a second bump density higher than the first bump density.

公开(公告)号：US20230006724A1

公开(公告)日：2023-01-05

申请号：US17940454

申请日：2022-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwonyeol PARK ,  Dongwoo KIM ,  Minho SHIN ,  Changho SHIN ,  Jonghun RHEE

IPC: H04B7/06 ,  H04L12/18 ,  H04L1/00 ,  H04W4/06 ,  H04L5/00 ,  H04W52/16

Abstract: A method of receiving multicast transmission from a base station includes receiving allocation information about a feedback channel including a plurality of resources shared by another terminal, determining feedback information based on an estimated channel with the base station, determining a plurality of transmission power levels respectively corresponding to the plurality of resources based on the feedback information, and transmitting channel feedback to the base station on the feedback channel based on the plurality of transmission power levels.

公开(公告)号：US20200310083A1

公开(公告)日：2020-10-01

申请号：US16765286

申请日：2018-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwoo KIM

IPC: G02B13/00 ,  G02B9/64

Abstract: Disclosed are an optical lens assembly and an electronic device including the same.The disclosed optical lens assembly may include a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens arranged from an object side to an image side, the first lens may have a negative refractive power, an object side surface or an image side surface of the seventh lens may include an aspherical shape that is convex toward the object side in a region near an optical axis and is concave toward the object side in a peripheral region, and the optical lens assembly may have a field of view ranging from 120° to 200°.