公开(公告)号：US20250069919A1

公开(公告)日：2025-02-27

申请号：US18941170

申请日：2024-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongho KIM ,  Hyunjoon KIM ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L21/67 ,  H01L21/673 ,  H01L33/00

Abstract: Provided is a dispenser for a solution including a reservoir configured to hold a suspension of micro light-emitting diodes (LEDs) suspended in a solvent; a stirrer configured to stir the suspension in the reservoir; a discharge path including a first valve configured to control outflow of the suspension from the reservoir; a filling path including a second valve configured to control inflow of the suspension into the reservoir; a hydraulic path including a third valve configured to control a pressure inside the reservoir; and a washing path connected to the first valve and configured to input a washing fluid for washing the discharge path into the discharge path, wherein the first valve includes a multi-way valve configured to selectively connect the discharge path to one of the reservoir and the washing path.

公开(公告)号：US20240322097A1

公开(公告)日：2024-09-26

申请号：US18424222

申请日：2024-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junsik HWANG ,  Hakyeol KIM ,  Jaewook PARK ,  Sanghoon SONG ,  Jungwoon SHIN ,  Keunsik LEE ,  Eungyeong LEE

IPC: H01L33/62 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A display device having a perpendicular electrode structure and a method of manufacturing the display device are provided. The display device includes a display substrate including wiring therein, a first pad provided on the display substrate and connected to the wiring, a second pad provided on the display substrate, spaced apart from the first pad, and connected to the wiring, and a micro-semiconductor chip including a first electrode, a p-type semiconductor layer provided on the first electrode, an active layer provided on the p-type semiconductor layer, an n-type semiconductor layer provided on the active layer, and a second electrode provided on the n-type semiconductor layer, wherein the micro-semiconductor chip is constituted by a perpendicular electrode chip, the first electrode is connected to the first pad, and the second electrode is connected to the second pad.

公开(公告)号：US20240322068A1

公开(公告)日：2024-09-26

申请号：US18433068

申请日：2024-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek OH ,  Dongho KIM ,  Joonyong PARK ,  Junsik HWANG ,  Dongkyun KIM ,  Sanghoon SONG ,  Minchul YU ,  Kyungwook HWANG

IPC: H01L33/00 ,  H01L21/67 ,  H01L21/673

CPC classification number: H01L33/005 ,  H01L21/67132 ,  H01L21/67333

Abstract: A micro semiconductor chip transfer method is provided and includes: preparing a transfer substrate including an upper portion having grooves formed therein; supplying, to the upper portion of the transfer substrate, a suspension including micro semiconductor chips and a liquid; and aligning the micro semiconductor chips in the grooves by sweeping, with an alignment bar that includes a hydrophobic wiper, an upper surface of the transfer substrate while the suspension is on the upper surface of the transfer substrate.

公开(公告)号：US20240162403A1

公开(公告)日：2024-05-16

申请号：US18220974

申请日：2023-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongkyun KIM ,  Dongho KIM ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: Provided are a multifold micro emitting device, a display apparatus, a method of manufacturing the multifold micro emitting device, and method of manufacturing the display apparatus. The multifold micro light emitting device includes a plurality of sub light emitting devices, a first electrode configured to apply a voltage to each of the plurality of sub light emitting devices, a second electrode configured to apply a common voltage to the plurality of sub light emitting devices, and a separator configured to separate the plurality of sub light emitting devices from each other, and the plurality of sub light emitting devices are configured as a single chip.

公开(公告)号：US20240079395A1

公开(公告)日：2024-03-07

申请号：US18114039

申请日：2023-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong Park ,  Dongho KIM ,  Hyunjoon KIM ,  Seogwoo HONG ,  Hyungwook HWANG ,  Junsik HWANG

IPC: H01L25/13 ,  H01L21/673

CPC classification number: H01L25/13 ,  H01L21/67333

Abstract: A method of mass-transferring a plurality of micro semiconductor chips, including mass-transferring a plurality of first micro semiconductor chips onto a first substrate such that they are disposed in a plurality of first grooves of the first substrate; determining whether an empty first groove is present; and positioning a second micro semiconductor chip in the empty first groove, wherein the positioning may include transferring a plurality of second micro semiconductor chips onto a second substrate separate from the first substrate; and adsorbing the second micro semiconductor chip from the second substrate, and positioning the adsorbed second micro semiconductor chip in the empty first groove, using an electrostatic force or an electromagnetic force.

公开(公告)号：US20240079385A1

公开(公告)日：2024-03-07

申请号：US18120166

申请日：2023-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongkyun KIM ,  Sanghoon SONG ,  Minchul YU ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L25/075 ,  H01L33/38

CPC classification number: H01L25/0753 ,  H01L33/38

Abstract: Provided are a micro semiconductor chip transferring structure and a display device employing a display transferring structure. A transferring structure includes a transfer substrate having a plurality of grooves, and a plurality of micro semiconductor chips transferred to the plurality of grooves, respectively, wherein a minimum space between adjacent two of the plurality of micro semiconductor chips transferred to the plurality of grooves is 100% to 200% inclusive of a width of each of the plurality of micro semiconductor chips.

公开(公告)号：US20240006199A1

公开(公告)日：2024-01-04

申请号：US18086992

申请日：2022-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Kyungwook HWANG ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Minchul YU ,  Seogwoo HONG ,  Junsik HWANG

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/68

CPC classification number: H01L21/67132 ,  H01L21/68 ,  H01L21/67333

Abstract: A chip wet transfer apparatus includes a first chip supply module configured to supply a large amount of micro-semiconductor chips to a transfer substrate, a first chip alignment module configured to align the large amount of micro-semiconductor chips in a plurality of grooves, a second chip supply module configured to supply a small amount of micro-semiconductor chips, and a second chip alignment module configured to align the small amount of micro-semiconductor chips.

公开(公告)号：US20230420251A1

公开(公告)日：2023-12-28

申请号：US18086380

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junsik HWANG ,  Dongho KIM ,  Joonyong PARK

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  C30B25/18 ,  C30B25/04 ,  H01L25/075

CPC classification number: H01L21/02639 ,  H01L33/0066 ,  H01L33/32 ,  H01L33/0093 ,  C30B25/18 ,  C30B25/04 ,  H01L21/0262 ,  H01L21/02403 ,  H01L25/0753

Abstract: A method of manufacturing a semiconductor device, including: forming a membrane forming pattern on a substrate; forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern; forming a membrane having a protruding pattern by crystallizing the membrane material layer; forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane; and transferring the 2D material pattern to a transfer substrate

公开(公告)号：US20230275184A1

公开(公告)日：2023-08-31

申请号：US18144566

申请日：2023-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Sungjin KANG ,  Kyungwook HWANG ,  Junhee CHOI

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L33/20 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/382

Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.

公开(公告)号：US20220077120A1

公开(公告)日：2022-03-10

申请号：US17174934

申请日：2021-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo HONG ,  Junsik HWANG ,  Kyungwook HWANG

IPC: H01L25/075 ,  H01L27/12 ,  H01L33/50 ,  H01L33/62

Abstract: The present disclosure provides a micro-light-emitting diode display apparatus and a method of manufacturing the same. Provided is a micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus including a driving circuit substrate, a first electrode provided on the driving circuit substrate, one or more micro-light-emitting diodes (LEDs) provided on the first electrode, an insulating layer provided on the one or more micro-LEDs, a via pattern provided in the insulating layer, electrical contacts provided in the via pattern, and a second electrode provided on the electrical contacts, wherein the via pattern exposes a portion of the one or more micro-LEDs.