公开(公告)号：US20230402439A1

公开(公告)日：2023-12-14

申请号：US17985332

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Kyungwook Hwang ,  Jaewook Jeong ,  Junsik Hwang ,  Dongkyun Kim ,  Dongho Kim ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong ,  Sanghoon Song ,  Minchul Yu

IPC: H01L25/16 ,  H01L33/38 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L33/38 ,  H01L24/05 ,  H01L24/95 ,  H01L2224/05559 ,  H01L24/16 ,  H01L2224/16145 ,  H01L2224/95001

Abstract: Provided is a microchip including a chip body having a first surface and a second surface facing the first surface, and an electrode layer on the second surface, wherein a surface roughness of the first surface is smaller than a surface roughness of an upper surface of the electrode layer such that van der Waals force between the first surface and an external contact surface are greater than van der Waals force between the electrode layer and the external contact surface.

公开(公告)号：US20230141485A1

公开(公告)日：2023-05-11

申请号：US17735747

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Dongkyun Kim ,  Joonyong Park ,  Seogwoo Hong ,  Kyungwook Hwang ,  Junsik Hwang

IPC: H01L25/13 ,  H01L21/673

CPC classification number: H01L25/13 ,  H01L21/67333

Abstract: A device transfer substrate includes a plurality of recesses, wherein each of the plurality of recesses includes a first region having a shape of a first figure, a second region having a shape of a second figure, and an overlapping region formed as a portion of the first region partially overlaps a portion of the second region, wherein a maximum width of the overlapping region in a direction intersecting with a straight line passing through a center of the first figure and a center of the second figure is less than a diameter or a diagonal length of the first figure and less than a diameter or a diagonal length of the second figure.

公开(公告)号：US20220029046A1

公开(公告)日：2022-01-27

申请号：US17171636

申请日：2021-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seogwoo Hong ,  Junsik Hwang ,  Hyunjoon Kim ,  Joonyong Park ,  Kyungwook Hwang

IPC: H01L33/00 ,  H01L25/075

Abstract: A method of transferring micro-light emitting diodes is provided. The method includes preparing a transfer substrate including a first groove, a second groove, and a third groove; forming a first transfer prevention film on the second groove and forming a second transfer prevention film on the third groove; transferring, into the first groove, a first micro-light emitting diode configured to emit a first color light; removing the first transfer prevention film formed on the second groove; transferring, into the second groove, a second micro-light emitting diode configured to emit a second color light; removing the second transfer prevention film formed on the third groove; and transferring, into the third groove, a third micro-light emitting diode configured to emit a third color light.

公开(公告)号：US10311275B2

公开(公告)日：2019-06-04

申请号：US15424130

申请日：2017-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo Hong ,  Dongkyun Kim

IPC: G06K9/28 ,  G06K9/00

Abstract: Sensing sensitivity of a fingerprint sensor may be enhanced by grouping driving electrodes and driving groups. A processor of the fingerprint sensor may calculate mutual capacitance at each node on a touchpad from gross mutual capacitances in areas including a plurality of channels.

公开(公告)号：US10114225B2

公开(公告)日：2018-10-30

申请号：US15269136

申请日：2016-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon Kim ,  Joonyong Park ,  Bongsu Shin ,  Dongouk Kim ,  Jihyun Bae ,  Dongsik Shim ,  SungHoon Lee ,  Jaeseung Chung ,  Seogwoo Hong

IPC: G02B27/22 ,  F21V8/00 ,  H04N13/31 ,  H04N13/366 ,  G03H1/22 ,  G06F17/14

Abstract: A directional backlight unit, a three-dimensional (3D) image display apparatus, and a 3D image displaying method are provided. The directional backlight unit includes a light guide plate having an emission surface on which a plurality of grating elements including first and second groups of grating elements are provided. The plurality of grating elements are arranged such that light beams emitted from the first and second groups of grating elements commonly propagate through a plurality of pixel points and respectively form first and second groups of view points of which corresponding regions do not overlap with each other.

公开(公告)号：US09873136B2

公开(公告)日：2018-01-23

申请号：US14701580

申请日：2015-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsik Shim ,  Seogwoo Hong ,  Seokwhan Chung

IPC: H02N11/00 ,  H02N1/00 ,  H02N2/00 ,  B06B1/02

CPC classification number: B06B1/0292

Abstract: An ultrasonic transducer and a method of manufacturing the same are provided. The ultrasonic transducer includes a substrate, a first insulation layer, and a first thin film layer; a plurality of support members formed on the first thin film layer; a second thin film layer supported by the plurality of support members; a cavity between the first thin film layer and the second thin film layer; and a common ground electrode on the second thin film layer.

公开(公告)号：US20250151474A1

公开(公告)日：2025-05-08

申请号：US19009427

申请日：2025-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo Hong ,  Hyunjoon Kim ,  Joonyong Park ,  Kyungwook Hwang ,  Junsik Hwang

IPC: H10H20/831 ,  H10H29/14

Abstract: Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.

公开(公告)号：US20250132226A1

公开(公告)日：2025-04-24

申请号：US18639331

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo Hong ,  Sungchan Kang ,  Dongkyun Kim ,  Daehyuk Son ,  Hotaik Lee

IPC: H01L23/473 ,  H10B80/00

Abstract: A semiconductor device includes a semiconductor chip including a heat transfer surface and a semiconductor integrated circuit, a plurality of porous microstructures each including a plurality of internal pores, external capillary channels between the plurality of porous microstructures, and internal capillary channels in the plurality of porous microstructures, where each of the plurality of porous microstructures are configured to generate a capillary force causing a flow of coolant that exchanges heat with the heat transfer surface of the semiconductor chip.

公开(公告)号：US20250048783A1

公开(公告)日：2025-02-06

申请号：US18920608

申请日：2024-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Seogwoo Hong ,  kyungwook Hwang ,  Hyunjoon Kim ,  Junsik Hwang

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62

Abstract: Provided is a method of manufacturing a display, the method including a first operation of transferring a plurality of micro light emitting diodes (LEDs) to a plurality of wells of an interposer through a fluidic self assembly (FSA) process, a second operation of aligning a driving substrate on the interposer, a third operation of injecting a penetrating solvent between the interposer and the driving substrate, such that the penetrating solvent penetrates between the plurality of micro LEDs and the plurality of wells, and a fourth operation of transferring the plurality of micro LEDs to the driving substrate by radiating light to the interposer to vaporize the penetrating solvent.

公开(公告)号：US11769855B2

公开(公告)日：2023-09-26

申请号：US17194942

申请日：2021-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang ,  Seogwoo Hong

IPC: H01L33/04 ,  H01L25/075 ,  H01L33/32 ,  H01L33/62 ,  H01L33/14 ,  H01L33/16 ,  H01L33/12 ,  H01L33/50

CPC classification number: H01L33/04 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  H01L33/62 ,  H01L33/50

Abstract: Provided is a micro light emitting device and a display apparatus having the micro light emitting device. The micro light emitting device includes a first-type semiconductor layer provided on a substrate, a superlattice layer provided on the first-type semiconductor layer, a current blocking layer provided on a side portion of the superlattice layer, an active layer provided on the superlattice layer and the current blocking layer, and a second-type semiconductor layer provided on the active layer.