公开(公告)号：US11624027B2

公开(公告)日：2023-04-11

申请号：US17366429

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Hwea Yoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/56 ,  C01B19/00 ,  C01G9/08 ,  C09K11/62 ,  B82Y20/00 ,  H01L51/50 ,  B82Y40/00

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11569469B2

公开(公告)日：2023-01-31

申请号：US17205015

申请日：2021-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Kwanghee Kim ,  Hongkyu Seo ,  Eun Joo Jang ,  Oul Cho ,  Tae Hyung Kim ,  Yuho Won ,  Hee Jae Lee

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

公开(公告)号：US11499098B2

公开(公告)日：2022-11-15

申请号：US17007179

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  H01L51/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11142685B2

公开(公告)日：2021-10-12

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: H01L51/50 ,  C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11060026B2

公开(公告)日：2021-07-13

申请号：US17083470

申请日：2020-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Ha Il Kwon ,  Eun Joo Jang ,  Jaejun Chang ,  Dae Young Chung

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/08 ,  B82Y20/00 ,  H01L51/00 ,  B82Y40/00

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).

公开(公告)号：US11011672B2

公开(公告)日：2021-05-18

申请号：US16786004

申请日：2020-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L33/04 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US10074770B2

公开(公告)日：2018-09-11

申请号：US15386512

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L29/06 ,  H01L33/04 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US12215266B2

公开(公告)日：2025-02-04

申请号：US18354182

申请日：2023-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  C09K11/61 ,  C09K11/70 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22 ,  H01L33/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

公开(公告)号：US11981851B2

公开(公告)日：2024-05-14

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/01 ,  C01P2002/74 ,  C01P2004/30 ,  C01P2004/64 ,  C01P2004/80

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11827828B2

公开(公告)日：2023-11-28

申请号：US18059075

申请日：2022-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Eun Joo Jang ,  Yongwook Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Shin Ae Jun ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/54 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  C09K11/74 ,  C09K11/02 ,  C09K11/88 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/70 ,  B82Y20/00 ,  Y10S977/774 ,  Y10S977/95

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.