INDUCTOR
    22.
    发明申请
    INDUCTOR 有权
    电感器

    公开(公告)号:US20110140825A1

    公开(公告)日:2011-06-16

    申请号:US12968022

    申请日:2010-12-14

    IPC分类号: H01F27/30

    摘要: Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.

    摘要翻译: 提供一种电感器。 电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子,形成在半导体衬底的一侧上的第一导电线,并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子 形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线,以及形成在所述半导体衬底的另一侧上并电连接的第三导电线 连接到第一至第四导电端子中的第一和第三导电端子。

    Power amplifier device
    25.
    发明授权
    Power amplifier device 有权
    功率放大器装置

    公开(公告)号:US08130041B2

    公开(公告)日:2012-03-06

    申请号:US12960153

    申请日:2010-12-03

    IPC分类号: H03F3/68

    摘要: Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.

    摘要翻译: 提供了一种功率放大器装置。 功率放大器装置包括:切断单元,切断从信号输入端子发送的信号的直流(DC)分量; 连接到所述切断单元的电路保护单元,并且稳定从所述切断单元传送的信号; 以及放大单元,连接到所述电路保护单元并放大从所述电路保护单元传送的信号,其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管,所述电路保护单元包括电阻器, 多个晶体管。

    Inductor
    26.
    发明授权
    Inductor 有权
    电感器

    公开(公告)号:US07986211B2

    公开(公告)日:2011-07-26

    申请号:US12968022

    申请日:2010-12-14

    IPC分类号: H01F5/00

    摘要: Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.

    摘要翻译: 提供一种电感器。 电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子,形成在半导体衬底的一侧上的第一导电线,并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子 形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线,以及形成在所述半导体衬底的另一侧上并电连接的第三导电线 连接到第一至第四导电端子中的第一和第三导电端子。

    Avalanche photo diode and method of manufacturing the same
    27.
    发明授权
    Avalanche photo diode and method of manufacturing the same 有权
    雪崩光电二极管及其制造方法

    公开(公告)号:US08710547B2

    公开(公告)日:2014-04-29

    申请号:US13605135

    申请日:2012-09-06

    IPC分类号: H01L29/72

    CPC分类号: H01L31/107

    摘要: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

    摘要翻译: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板,形成在基板上的光吸收层,形成在光吸收层上的包覆层,形成在包层中的有源区,形成在有源区周围的保护环区,绝缘 形成在保护环区域和有源区域之间的区域。

    AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME
    28.
    发明申请
    AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    AVALANCHE照相二极管及其制造方法

    公开(公告)号:US20130153962A1

    公开(公告)日:2013-06-20

    申请号:US13605135

    申请日:2012-09-06

    IPC分类号: H01L31/107 H01L31/18

    CPC分类号: H01L31/107

    摘要: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

    摘要翻译: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板,形成在基板上的光吸收层,形成在光吸收层上的包覆层,形成在包层中的有源区,形成在有源区周围的保护环区,绝缘 形成在保护环区域和有源区域之间的区域。

    Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same
    30.
    发明授权
    Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same 失效
    用于检测红外激光雷达图像信号的光电检测器及其制造方法

    公开(公告)号:US07855094B2

    公开(公告)日:2010-12-21

    申请号:US12428575

    申请日:2009-04-23

    IPC分类号: H01L21/00

    摘要: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

    摘要翻译: 一种光电检测器,其中用于连接电极的金属布线布置在平坦化表面上,从而简化了金属布线布置,并提供了其制造方法。 光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。 在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管,并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。 隔离区域和化合物半导体层的表面位于同一水平。 隔离区域可以是Fe杂质区域。